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Tony Tae-Hyoung KIM
Tony Tae-Hyoung KIM
Verified email at ntu.edu.sg - Homepage
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Year
A scaling roadmap and performance evaluation of in-plane and perpendicular MTJ based STT-MRAMs for high-density cache memory
KC Chun, H Zhao, JD Harms, TH Kim, JP Wang, CH Kim
IEEE journal of solid-state circuits 48 (2), 598-610, 2012
3382012
Silicon odometer: An on-chip reliability monitor for measuring frequency degradation of digital circuits
TH Kim, R Persaud, CH Kim
IEEE Journal of Solid-State Circuits 43 (4), 874-880, 2008
3252008
A 0.2 V, 480 kb subthreshold SRAM with 1 k cells per bitline for ultra-low-voltage computing
TH Kim, J Liu, J Keane, CH Kim
IEEE Journal of Solid-State Circuits 43 (2), 518-529, 2008
2532008
A high-density subthreshold SRAM with data-independent bitline leakage and virtual ground replica scheme
TH Kim, J Liu, J Keane, CH Kim
2007 IEEE International Solid-State Circuits Conference. Digest of Technical …, 2007
1982007
An on-chip NBTI sensor for measuring PMOS threshold voltage degradation
J Keane, TH Kim, CH Kim
IEEE transactions on very large scale integration (VLSI) systems 18 (6), 947-956, 2009
1732009
Utilizing reverse short-channel effect for optimal subthreshold circuit design
TH Kim, J Keane, H Eom, CH Kim
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 15 (7), 821-829, 2007
1592007
A Voltage Scalable 0.26 V, 64 kb 8T SRAM With V Lowering Techniques and Deep Sleep Mode
TH Kim, J Liu, CH Kim
Solid-State Circuits, IEEE Journal of 44 (6), 1785-1795, 2009
1582009
A Voltage Scalable 0.26 V, 64 kb 8T SRAM With V Lowering Techniques and Deep Sleep Mode
TH Kim, J Liu, CH Kim
IEEE journal of solid-state circuits 44 (6), 1785-1795, 2009
1582009
A multi-story power delivery technique for 3D integrated circuits
P Jain, TH Kim, J Keane, CH Kim
Proceeding of the 13th international symposium on Low power electronics and …, 2008
802008
Subthreshold logical effort: a systematic framework for optimal subthreshold device sizing
J Keane, H Eom, TH Kim, S Sapatnekar, C Kim
Proceedings of the 43rd Annual Design Automation Conference, 425-428, 2006
772006
Design of an ultra-low voltage 9T SRAM with equalized bitline leakage and CAM-assisted energy efficiency improvement
B Wang, TQ Nguyen, AT Do, J Zhou, M Je, TTH Kim
IEEE Transactions on Circuits and Systems I: Regular Papers 62 (2), 441-448, 2014
722014
An 8T subthreshold SRAM cell utilizing reverse short channel effect for write margin and read performance improvement
TH Kim, J Liu, CH Kim
2007 IEEE Custom Integrated Circuits Conference, 241-244, 2007
612007
A 16K current-based 8T SRAM compute-in-memory macro with decoupled read/write and 1-5bit column ADC
C Yu, T Yoo, TTH Kim, KCT Chuan, B Kim
2020 IEEE Custom Integrated Circuits Conference (CICC), 1-4, 2020
512020
The shuttle nanoelectromechanical nonvolatile memory
V Pott, GL Chua, R Vaddi, JML Tsai, TT Kim
IEEE transactions on electron devices 59 (4), 1137-1143, 2012
502012
0.77 fJ/bit/search content addressable memory using small match line swing and automated background checking scheme for variation tolerance
AT Do, C Yin, K Velayudhan, ZC Lee, KS Yeo, TTH Kim
IEEE Journal of Solid-State Circuits 49 (7), 1487-1498, 2014
492014
An area and energy efficient ultra-low voltage level shifter with pass transistor and reduced-swing output buffer in 65-nm CMOS
TTH Kim
IEEE Transactions on Circuits and Systems II: Express Briefs 65 (5), 607-611, 2018
472018
Semiconductor device with programmable impedance control circuit
UR Cho, TH Kim, JS Yang
US Patent 6,839,286, 2005
412005
An 88% Efficiency 0.1–300-W Energy Harvesting System With 3-D MPPT Using Switch Width Modulation for IoT Smart Nodes
K Rawy, T Yoo, TTH Kim
IEEE Journal of Solid-State Circuits 53 (10), 2751-2762, 2018
392018
Silicon odometers: Compact in situ aging sensors for robust system design
X Wang, J Keane, TTH Kim, P Jain, Q Tang, CH Kim
IEEE micro 34 (6), 74-85, 2014
372014
A 457 nW near-threshold cognitive multi-functional ECG processor for long-term cardiac monitoring
X Liu, J Zhou, Y Yang, B Wang, J Lan, C Wang, J Luo, WL Goh, TTH Kim, ...
IEEE Journal of Solid-State Circuits 49 (11), 2422-2434, 2014
352014
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