Zachary Evan Fleetwood
Zachary Evan Fleetwood
SpaceX
Email verificata su gatech.edu
Titolo
Citata da
Citata da
Anno
Design of radiation-hardened RF low-noise amplifiers using inverse-mode SiGe HBTs
I Song, S Jung, NE Lourenco, US Raghunathan, ZE Fleetwood, ...
IEEE Transactions on Nuclear Science 61 (6), 3218-3225, 2014
292014
An investigation of single-event effects and potential SEU mitigation strategies in fourth-generation, 90 nm SiGe BiCMOS
NE Lourenco, SD Phillips, TD England, AS Cardoso, ZE Fleetwood, ...
IEEE Transactions on Nuclear Science 60 (6), 4175-4183, 2013
202013
Using TCAD modeling to compare heavy-ion and laser-induced single event transients in SiGe HBTs
ZE Fleetwood, NE Lourenco, A Ildefonso, JH Warner, MT Wachter, ...
IEEE Transactions on Nuclear Science 64 (1), 398-405, 2016
192016
Evaluation of enhanced low dose rate sensitivity in fourth-generation SiGe HBTs
ZE Fleetwood, AS Cardoso, I Song, E Wilcox, NE Lourenco, SD Phillips, ...
IEEE transactions on Nuclear Science 61 (6), 2915-2922, 2014
192014
Advanced SiGe BiCMOS technology for multi-Mrad electronic systems
ZE Fleetwood, EW Kenyon, NE Lourenco, S Jain, EX Zhang, TD England, ...
IEEE Transactions on Device and Materials Reliability 14 (3), 844-848, 2014
192014
Single-event transient and total dose response of precision voltage reference circuits designed in a 90-nm SiGe BiCMOS technology
AS Cardoso, PS Chakraborty, N Karaulac, DM Fleischhauer, ...
IEEE Transactions on Nuclear Science 61 (6), 3210-3217, 2014
172014
The impact of technology scaling on the single-event transient response of SiGe HBTs
NE Lourenco, ZE Fleetwood, A Ildefonso, MT Wachter, NJH Roche, ...
IEEE Transactions on Nuclear Science 64 (1), 406-414, 2016
162016
On the Transient Response of a Complementary (npn pnp) SiGe HBT BiCMOS Technology
NE Lourenco, ZE Fleetwood, S Jung, AS Cardoso, PS Chakraborty, ...
IEEE Transactions on Nuclear Science 61 (6), 3146-3153, 2014
152014
Impact of technology scaling in sub-100 nm nMOSFETs on total-dose radiation response and hot-carrier reliability
R Arora, ZE Fleetwood, EX Zhang, NE Lourenco, JD Cressler, ...
IEEE Transactions on Nuclear Science 61 (3), 1426-1432, 2014
152014
An investigation of single event transient response in 45-nm and 32-nm SOI RF-CMOS devices and circuits
TD England, R Arora, ZE Fleetwood, NE Lourenco, KA Moen, AS Cardoso, ...
IEEE Transactions on Nuclear Science 60 (6), 4405-4411, 2013
152013
Experimental validation of an equivalent LET approach for correlating heavy-ion and laser-induced charge deposition
JM Hales, A Khachatrian, S Buchner, NJH Roche, J Warner, ...
IEEE Transactions on Nuclear Science 65 (8), 1724-1733, 2018
142018
An investigation of single-event effect modeling techniques for a SiGe RF low-noise amplifier
NE Lourenco, S Zeinolabedinzadeh, A Ildefonso, ZE Fleetwood, CT Coen, ...
IEEE Transactions on Nuclear Science 63 (1), 273-280, 2016
122016
Impact of total ionizing dose on a 4th generation, 90 nm SiGe HBT Gaussian pulse generator
F Inanlou, NE Lourenco, ZE Fleetwood, I Song, DC Howard, A Cardoso, ...
IEEE Transactions on Nuclear Science 61 (6), 3050-3054, 2014
122014
Collector transport in SiGe HBTs operating at cryogenic temperatures
H Ying, J Dark, AP Omprakash, BR Wier, L Ge, U Raghunathan, ...
IEEE Transactions on Electron Devices 65 (9), 3697-3703, 2018
112018
An investigation of the use of inverse-mode SiGe HBTs as switching pairs for SET-mitigated RF mixers
I Song, US Raghunathan, NE Lourenco, ZE Fleetwood, MA Oakley, ...
IEEE Transactions on Nuclear Science 63 (2), 1099-1108, 2016
102016
Single-Event Effects in a W-Band (75-110 GHz) Radar Down-Conversion Mixer Implemented in 90 nm, 300 GHz SiGe HBT Technology
S Zeinolabedinzadeh, I Song, US Raghunathan, NE Lourenco, ...
IEEE Transactions on Nuclear Science 62 (6), 2657-2665, 2015
92015
Optimizing optical parameters to facilitate correlation of laser-and heavy-ion-induced single-event transients in SiGe HBTs
A Ildefonso, ZE Fleetwood, GN Tzintzarov, JM Hales, D Nergui, ...
IEEE Transactions on Nuclear Science 66 (1), 359-367, 2018
82018
A SiGe-BiCMOS wideband active bidirectional digital step attenuator with bandwidth tuning and equalization
MK Cho, I Song, ZE Fleetwood, JD Cressler
IEEE Transactions on Microwave Theory and Techniques 66 (8), 3866-3876, 2018
82018
Potential limitations on integrated silicon photonic waveguides operating in a heavy ion environment
PS Goley, ZE Fleetwood, JD Cressler
IEEE Transactions on Nuclear Science 65 (1), 141-148, 2017
82017
Optimization of SiGe HBT RF switches for single-event transient mitigation
I Song, S Jung, NE Lourenco, US Raghunathan, ZE Fleetwood, MK Cho, ...
IEEE Transactions on Nuclear Science 62 (6), 3057-3063, 2015
82015
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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