| High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates H Xing, Y Dora, A Chini, S Heikman, S Keller, UK Mishra IEEE Electron Device Letters 25 (4), 161-163, 2004 | 486 | 2004 |
| Deep-level characterization in GaN HEMTs-Part I: Advantages and limitations of drain current transient measurements D Bisi, M Meneghini, C De Santi, A Chini, M Dammann, P Brueckner, ... IEEE Transactions on electron devices 60 (10), 3166-3175, 2013 | 423 | 2013 |
| Surface-related drain current dispersion effects in AlGaN-GaN HEMTs G Meneghesso, G Verzellesi, R Pierobon, F Rampazzo, A Chini, ... IEEE Transactions on Electron Devices 51 (10), 1554-1561, 2004 | 414 | 2004 |
| GaN-based power devices: Physics, reliability, and perspectives M Meneghini, C De Santi, I Abid, M Buffolo, M Cioni, RA Khadar, L Nela, ... Journal of Applied Physics 130 (18), 2021 | 361 | 2021 |
| N-polar GaN∕ AlGaN∕ GaN high electron mobility transistors S Rajan, A Chini, MH Wong, JS Speck, UK Mishra Journal of Applied Physics 102 (4), 2007 | 289 | 2007 |
| N-polar GaN epitaxy and high electron mobility transistors MH Wong, S Keller, SD Nidhi, DJ Denninghoff, S Kolluri, DF Brown, J Lu, ... Semiconductor Science and Technology 28 (7), 074009, 2013 | 252 | 2013 |
| 12W/mm power density AlGaN/GaN HEMTs on sapphire substrate A Chini, D Buttari, R Coffie, S Heikman, S Keller, UK Mishra Electronics Letters 40 (1), 1, 2004 | 198 | 2004 |
| Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements M Meneghini, I Rossetto, D Bisi, A Stocco, A Chini, A Pantellini, C Lanzieri, ... IEEE Transactions on Electron Devices 61 (12), 4070-4077, 2014 | 180 | 2014 |
| AlGaN/GaN-based HEMTs failure physics and reliability: Mechanisms affecting gate edge and Schottky junction E Zanoni, M Meneghini, A Chini, D Marcon, G Meneghesso IEEE Transactions on Electron Devices 60 (10), 3119-3131, 2013 | 172 | 2013 |
| Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias M Meneghini, A Stocco, M Bertin, D Marcon, A Chini, G Meneghesso, ... Applied Physics Letters 100 (3), 2012 | 154 | 2012 |
| High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation L Shen, R Coffie, D Buttari, S Heikman, A Chakraborty, A Chini, S Keller, ... IEEE Electron Device Letters 25 (1), 7-9, 2004 | 142 | 2004 |
| Mechanisms of RF current collapse in AlGaN–GaN high electron mobility transistors M Faqir, G Verzellesi, A Chini, F Fantini, F Danesin, G Meneghesso, ... IEEE Transactions on Device and Materials Reliability 8 (2), 240-247, 2008 | 136 | 2008 |
| Reliability issues of gallium nitride high electron mobility transistors G Meneghesso, M Meneghini, A Tazzoli, A Stocco, A Chini, E Zanoni International Journal of Microwave and Wireless Technologies 2 (1), 39-50, 2010 | 135 | 2010 |
| Origin of etch delay time in dry etching of AlGaN/GaN structures D Buttari, A Chini, T Palacios, R Coffie, L Shen, H Xing, S Heikman, ... Applied physics letters 83 (23), 4779-4781, 2003 | 132 | 2003 |
| Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs A Chini, D Buttari, R Coffie, L Shen, S Heikman, A Chakraborty, S Keller, ... IEEE Electron Device Letters 25 (5), 229-231, 2004 | 130 | 2004 |
| Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs T Palacios, A Chini, D Buttari, S Heikman, A Chakraborty, S Keller, ... IEEE transactions on electron devices 53 (3), 562-565, 2006 | 124 | 2006 |
| Fabrication of single or multiple gate field plates A Chini, UK Mishra, P Parikh, Y Wu US Patent 7,812,369, 2010 | 99 | 2010 |
| A C-band high-dynamic range GaN HEMT low-noise amplifier H Xu, C Sanabria, A Chini, S Keller, UK Mishra, RA York IEEE Microwave and Wireless Components Letters 14 (6), 262-264, 2004 | 98 | 2004 |
| Experimental and numerical analysis of hole emission process from carbon-related traps in GaN buffer layers A Chini, G Meneghesso, M Meneghini, F Fantini, G Verzellesi, A Patti, ... IEEE Transactions on Electron Devices 63 (9), 3473-3478, 2016 | 96 | 2016 |
| Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs D Buttari, A Chini, G Meneghesso, E Zanoni, B Moran, S Heikman, ... IEEE Electron device letters 23 (2), 76-78, 2002 | 89 | 2002 |
