Segui
Ashwin Rishinaramangalam
Ashwin Rishinaramangalam
Email verificata su intel.com
Titolo
Citata da
Citata da
Anno
Threading defect elimination in GaN nanowires
SD Hersee, AK Rishinaramangalam, MN Fairchild, L Zhang, P Varangis
Journal of Materials Research 26 (17), 2293-2298, 2011
1622011
GaN nanowire light emitting diodes based on templated and scalable nanowire growth process
SD Hersee, M Fairchild, AK Rishinaramangalam, MS Ferdous, L Zhang, ...
Electronics Letters 45 (1), 75-76, 2009
1152009
Nonpolar -Plane InGaN/GaN Micro-Scale Light-Emitting Diode With 1.5 GHz Modulation Bandwidth
A Rashidi, M Monavarian, A Aragon, A Rishinaramangalam, D Feezell
IEEE Electron Device Letters 39 (4), 520-523, 2018
1092018
Carrier dynamics and electro-optical characterization of high-performance GaN/InGaN core-shell nanowire light-emitting diodes
M Nami, IE Stricklin, KM DaVico, S Mishkat-Ul-Masabih, ...
Scientific reports 8 (1), 501, 2018
832018
Transport characterization in nanowires using an electrical nanoprobe
AA Talin, F Leonard, AM Katzenmeyer, BS Swartzentruber, ST Picraux, ...
Semiconductor Science and Technology 25 (2), 024015, 2010
792010
High-speed nonpolar InGaN/GaN LEDs for visible-light communication
A Rashidi, M Monavarian, A Aragon, S Okur, M Nami, ...
IEEE Photonics Technology Letters 29 (4), 381-384, 2017
762017
Si-doped β-(Al0. 26Ga0. 74) 2O3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy
P Ranga, A Rishinaramangalam, J Varley, A Bhattacharyya, D Feezell, ...
Applied Physics Express 12 (11), 111004, 2019
712019
Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes
M Monavarian, A Rashidi, AA Aragon, SH Oh, AK Rishinaramangalam, ...
Applied Physics Letters 112 (4), 2018
692018
Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes
A Rashidi, M Nami, M Monavarian, A Aragon, K DaVico, F Ayoub, ...
Journal of Applied Physics 122 (3), 2017
612017
Delta-doped β-Ga2O3 thin films and β-(Al0. 26Ga0. 74) 2O3/β-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy
P Ranga, A Bhattacharyya, A Rishinaramangalam, YK Ooi, MA Scarpulla, ...
Applied Physics Express 13 (4), 045501, 2020
572020
Electrically injected GHz-class GaN/InGaN core–shell nanowire-based μLEDs: carrier dynamics and nanoscale homogeneity
M Nami, A Rashidi, M Monavarian, S Mishkat-Ul-Masabih, ...
Acs Photonics 6 (7), 1618-1625, 2019
562019
Nanoporous distributed Bragg reflectors on free-standing nonpolar m-plane GaN
S Mishkat-Ul-Masabih, TS Luk, A Rishinaramangalam, M Monavarian, ...
Applied Physics Letters 112 (4), 2018
422018
Tailoring the morphology and luminescence of GaN/InGaN core–shell nanowires using bottom-up selective-area epitaxy
M Nami, RF Eller, S Okur, AK Rishinaramangalam, S Liu, I Brener, ...
Nanotechnology 28 (2), 025202, 2016
392016
Semipolar InGaN/GaN nanostructure light-emitting diodes on c-plane sapphire
AK Rishinaramangalam, M Nami, MN Fairchild, DM Shima, ...
Applied Physics Express 9 (3), 032101, 2016
352016
Internal quantum efficiency and carrier dynamics in semipolar (20 21) InGaN/GaN light-emitting diodes
S Okur, M Nami, AK Rishinaramangalam, SH Oh, SP DenBaars, S Liu, ...
Optics express 25 (3), 2178-2186, 2017
342017
Controlled growth of ordered III-nitride core–shell nanostructure arrays for visible optoelectronic devices
AK Rishinaramangalam, SM Ul Masabih, MN Fairchild, JB Wright, ...
Journal of Electronic Materials 44, 1255-1262, 2015
312015
GaN nanowire tips for nanoscale atomic force microscopy
M Behzadirad, M Nami, AK Rishinaramagalam, DF Feezell, T Busani
Nanotechnology 28 (20), 20LT01, 2017
252017
Experimental study of field emission from ultrasharp silicon, diamond, GaN, and tungsten tips in close proximity to the counter electrode
C Lenk, S Lenk, M Holz, E Guliyev, M Hofmann, T Ivanov, IW Rangelow, ...
Journal of Vacuum Science & Technology B 36 (6), 2018
242018
Reduction of reverse‐leakage current in selective‐area‐grown GaN‐based core–shell nanostructure LEDs using AlGaN layers
AK Rishinaramangalam, M Nami, DM Shima, G Balakrishnan, ...
physica status solidi (a) 214 (5), 1600776, 2017
162017
High-speed nonpolar InGaN/GaN superluminescent diode with 2.5 GHz modulation bandwidth
A Rashidi, AK Rishinaramangalam, AA Aragon, S Mishkat-Ul-Masabih, ...
IEEE Photonics Technology Letters 32 (7), 383-386, 2020
152020
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
Articoli 1–20