Denis Marcon
Denis Marcon
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The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
Silicon substrate removal of GaN DHFETs for enhanced (< 1100 V) breakdown voltage
P Srivastava, J Das, D Visalli, J Derluyn, M Van Hove, PE Malinowski, ...
IEEE Electron Device Letters 31 (8), 851-853, 2010
Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2-Buffer Thickness by Local Substrate Removal
P Srivastava, J Das, D Visalli, M Van Hove, PE Malinowski, D Marcon, ...
IEEE Electron Device Letters 32 (1), 30-32, 2010
Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias
M Meneghini, A Stocco, M Bertin, D Marcon, A Chini, G Meneghesso, ...
Applied Physics Letters 100 (3), 033505, 2012
Low on-resistance high-breakdown normally off AlN/GaN/AlGaN DHFET on Si substrate
F Medjdoub, J Derluyn, K Cheng, M Leys, S Degroote, D Marcon, D Visalli, ...
IEEE electron device letters 31 (2), 111-113, 2010
AlGaN/GaN-based HEMTs failure physics and reliability: Mechanisms affecting gate edge and Schottky junction
E Zanoni, M Meneghini, A Chini, D Marcon, G Meneghesso
IEEE Transactions on Electron Devices 60 (10), 3119-3131, 2013
Forward bias gate breakdown mechanism in enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors
TL Wu, D Marcon, S You, N Posthuma, B Bakeroot, S Stoffels, ...
IEEE Electron device letters 36 (10), 1001-1003, 2015
A comprehensive reliability investigation of the voltage-, temperature-and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs
D Marcon, T Kauerauf, F Medjdoub, J Das, M Van Hove, P Srivastava, ...
2010 International Electron Devices Meeting, 20.3. 1-20.3. 4, 2010
Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs
D Bisi, M Meneghini, FA Marino, D Marcon, S Stoffels, M Van Hove, ...
IEEE Electron Device Letters 35 (10), 1004-1006, 2014
Negative bias-induced threshold voltage instability in GaN-on-Si power HEMTs
M Meneghini, I Rossetto, D Bisi, M Ruzzarin, M Van Hove, S Stoffels, ...
IEEE Electron Device Letters 37 (4), 474-477, 2016
Trapping and reliability assessment in D-mode GaN-based MIS-HEMTs for power applications
M Meneghini, D Bisi, D Marcon, S Stoffels, M Van Hove, TL Wu, ...
IEEE transactions on power electronics 29 (5), 2199-2207, 2013
Reliability analysis of permanent degradations on AlGaN/GaN HEMTs
D Marcon, G Meneghesso, TL Wu, S Stoffels, M Meneghini, E Zanoni, ...
IEEE Transactions on Electron Devices 60 (10), 3132-3141, 2013
Manufacturing challenges of GaN-on-Si HEMTs in a 200 mm CMOS fab
D Marcon, B De Jaeger, S Halder, N Vranckx, G Mannaert, M Van Hove, ...
IEEE transactions on semiconductor manufacturing 26 (3), 361-367, 2013
A 96% efficient high-frequency DC–DC converter using E-mode GaN DHFETs on Si
J Das, J Everts, J Van Den Keybus, M Van Hove, D Visalli, P Srivastava, ...
IEEE Electron Device Letters 32 (10), 1370-1372, 2011
200mm GaN-on-Si epitaxy and e-mode device technology
D Marcon, YN Saripalli, S Decoutere
2015 IEEE International Electron Devices Meeting (IEDM), 16.2. 1-16.2. 4, 2015
Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop
D Marcon, J Viaene, P Favia, H Bender, X Kang, S Lenci, S Stoffels, ...
Proceedings of the 20th IEEE International Symposium on the Physical and …, 2013
Comprehensive investigation of on-state stress on D-mode AlGaN/GaN MIS-HEMTs
TL Wu, D Marcon, MB Zahid, M Van Hove, S Decoutere, G Groeseneken
2013 IEEE International Reliability Physics Symposium (IRPS), 3C. 5.1-3C. 5.7, 2013
Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons
M Meneghini, D Bisi, D Marcon, S Stoffels, M Van Hove, TL Wu, ...
Applied Physics Letters 104 (14), 143505, 2014
Trapping mechanisms in GaN‐based MIS‐HEMTs grown on silicon substrate
D Bisi, M Meneghini, M Van Hove, D Marcon, S Stoffels, TL Wu, ...
physica status solidi (a) 212 (5), 1122-1129, 2015
Low leakage high breakdown e-mode GaN DHFET on Si by selective removal of in-situ grown Si3N4
J Derluyn, M Van Hove, D Visalli, A Lorenz, D Marcon, P Srivastava, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
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