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Ning Li
Ning Li
IBM T. J. Watson Research Center
Verified email at us.ibm.com
Title
Cited by
Cited by
Year
Efficient and bright organic light-emitting diodes on single-layer graphene electrodes
N Li, S Oida, GS Tulevski, SJ Han, JB Hannon, DK Sadana, TC Chen
Nature communications 4 (1), 2294, 2013
4022013
Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics
CW Cheng, KT Shiu, N Li, SJ Han, L Shi, DK Sadana
Nature communications 4 (1), 1577, 2013
3272013
Open circuit voltage enhancement due to reduced dark current in small molecule photovoltaic cells
N Li, BE Lassiter, RR Lunt, G Wei, SR Forrest
Applied Physics Letters 94 (2), 2009
2992009
High-saturation-current charge-compensated InGaAs-InP uni-traveling-carrier photodiode
N Li, X Li, S Demiguel, X Zheng, JC Campbell, DA Tulchinsky, ...
IEEE Photonics Technology Letters 16 (3), 864-866, 2004
1532004
Very high-responsivity evanescently coupled photodiodes integrating a short planar multimode waveguide for high-speed applications
S Demiguel, N Li, X Li, X Zheng, J Kim, JC Campbell, H Lu, A Anselm
IEEE Photonics Technology Letters 15 (12), 1761-1763, 2003
1172003
Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 Dielectric
N Li, ES Harmon, J Hyland, DB Salzman, TP Ma, Y Xuan, PD Ye
Applied Physics Letters 92 (14), 2008
1072008
High-saturation current wide-bandwidth photodetectors
DA Tulchinsky, X Li, N Li, S Demiguel, JC Campbell, KJ Williams
IEEE Journal of Selected Topics in Quantum Electronics 10 (4), 702-708, 2004
962004
Integrated nanocavity plasmon light sources for on-chip optical interconnects
K Liu, N Li, DK Sadana, VJ Sorger
ACS Photonics 3 (2), 233-242, 2016
892016
InGaAs/InAlAs avalanche photodiode with undepleted absorber
N Li, R Sidhu, X Li, F Ma, X Zheng, S Wang, G Karve, S Demiguel, ...
Applied physics letters 82 (13), 2175-2177, 2003
882003
Tilted bulk heterojunction organic photovoltaic cells grown by oblique angle deposition
N Li, SR Forrest
Applied Physics Letters 95 (12), 2009
872009
High-saturation-current InP-InGaAs photodiode with partially depleted absorber
X Li, N Li, X Zheng, S Demiguel, JC Campbell, DA Tulchinsky, ...
IEEE Photonics Technology Letters 15 (9), 1276-1278, 2003
842003
High-saturation-current InP-InGaAs photodiode with partially depleted absorber
X Li, N Li, X Zheng, S Demiguel, JC Campbell, DA Tulchinsky, ...
IEEE Photonics Technology Letters 15 (9), 1276-1278, 2003
842003
Analysis of metal-oxide-based charge generation layers used in stacked organic light-emitting diodes
X Qi, N Li, SR Forrest
Journal of Applied Physics 107 (1), 2010
812010
Emerging transparent conducting electrodes for organic light emitting diodes
TB Song, N Li
Electronics 3 (1), 190-204, 2014
702014
Monolithic III–V on silicon plasmonic nanolaser structure for optical interconnects
N Li, K Liu, VJ Sorger, DK Sadana
Scientific reports 5 (1), 14067, 2015
682015
High-speed and low-noise SACM avalanche photodiodes with an impact-ionization-engineered multiplication region
N Duan, S Wang, F Ma, N Li, JC Campbell, C Wang, LA Coldren
IEEE Photonics Technology Letters 17 (8), 1719-1721, 2005
642005
Thermal analysis of high-power InGaAs–InP photodiodes
N Duan, X Wang, N Li, HD Liu, JC Campbell
IEEE journal of quantum electronics 42 (12), 1255-1258, 2006
552006
SID Symposium Digest of Technical Papers
N Li, S Bedell, GS Tulevski, S Oida, D Sadana
John Wiley&Sons. Ltd, 52-2, 2013
542013
Backside illuminated high saturation current partially depleted absorber photodetecters
X Li, S Demiguel, N Li, JC Campbell, DL Tulchinsky, KJ Williams
Electronics letters 39 (20), 1, 2003
542003
Monolithic visible-infrared focal plane array on silicon
N Li, DK Sadana, RL Wisnieff
US Patent 9,472,588, 2016
482016
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Articles 1–20