Nafouti Maher
Nafouti Maher
Research at CNRS
Email verificata su insa-toulouse.fr
Titolo
Citata da
Citata da
Anno
Wafer Scale Formation of Monocrystalline Silicon-Based Mie Resonators via Silicon-on-Insulator Dewetting
M Abbarchi, M Naffouti, B Vial, A Benkouider, L Lermusiaux, L Favre, ...
ACS Nano, 2014
802014
All-dielectric color filters using SiGe-based Mie resonator arrays
T Wood, M Naffouti, J Berthelot, T David, JB Claude, L Mtayer, ...
ACS photonics 4 (4), 873-883, 2017
582017
Complex dewetting scenarios of ultrathin silicon films for large-scale nanoarchitectures
M Naffouti, R Backofen, M Salvalaglio, T Bottein, M Lodari, A Voigt, ...
Science advances 3 (11), eaao1472, 2017
532017
Time resolved and temperature dependence of the radiative properties of thiol-capped CdS nanoparticles films
NBHMMHZZMNFHHMHB Ouada
402014
Fabrication of poly-crystalline Si-based Mie resonators via amorphous Si on SiO2 dewetting
M Naffouti, T David, A Benkouider, L Favre, A Ronda, I Berbezier, ...
Nanoscale 8 (5), 2844-2849, 2016
38*2016
Kinetics and energetics of ge condensation in sige oxidation
T David, A Benkouider, JN Aqua, M Cabie, L Favre, T Neisius, M Abbarchi, ...
The Journal of Physical Chemistry C 119 (43), 24606-24613, 2015
232015
Templated solid‐state dewetting of thin silicon films
M Naffouti, T David, A Benkouider, L Favre, A Delobbe, A Ronda, ...
Small 12 (44), 6115-6123, 2016
222016
Ordered arrays of Au catalysts by FIB assisted heterogeneous dewetting
A Benkouider, A Ronda, T David, L Favre, M Abbarchi, M Naffouti, ...
Nanotechnology 26 (50), 505602, 2015
162015
Si 1− x Ge x nanoantennas with a tailored raman response and light-to-heat conversion for advanced sensing applications
E Mitsai, M Naffouti, T David, M Abbarchi, L Hassayoun, D Storozhenko, ...
Nanoscale 11 (24), 11634-11641, 2019
142019
Fabrication of core–shell nanostructures via silicon on insulator dewetting and germanium condensation: towards a strain tuning method for SiGe-based heterostructures in a…
M Naffouti
Nanotechnology 27 (30), 2016
142016
Templated dewetting of single-crystal sub-millimeter-long nanowires and on-chip silicon circuits
M Bollani, M Salvalaglio, A Benali, M Bouabdellaoui, M Naffouti, M Lodari, ...
Nature communications 10 (1), 1-10, 2019
122019
Self-assembled antireflection coatings for light trapping based on sige random metasurfaces
M Bouabdellaoui, S Checcucci, T Wood, M Naffouti, RP Sena, K Liu, ...
Physical Review Materials 2 (3), 035203, 2018
112018
A simple non-recessed and Au-free high quality Ohmic contacts on AlGaN/GaN: The case of Ti/Al alloy
G El-Zammar, A Yvon, W Khalfaoui, M Nafouti, F Cayrel, E Collard, ...
Materials Science in Semiconductor Processing 78, 107-110, 2018
82018
Solid-state dewetting of single-crystal silicon on insulator: Effect of annealing temperature and patch size
M Abbarchi, M Naffouti, M Lodari, M Salvalaglio, R Backofen, T Bottein, ...
Microelectronic Engineering 190, 1-6, 2018
62018
Cohen
RE Kelly
LJ, Semple, RJ, Bialer, P., Lau, A., Bodenheimer, A., Neustadter, E…, 2006
42006
Red-luminescence band: A tool for the quality assessment of germanium and silicon nanocrystals
I Fraj, L Favre, T David, M Abbarchi, K Liu, JB Claude, A Ronda, ...
Applied Surface Science 419, 476-483, 2017
32017
Photoluminescence and time-resolved photoluminescence studies of lateral carriers transfer among InAs/GaAs quantum dots
Z Zaaboub, F Hassen, M Naffouti, X Marie, R M’ghaieth, H Maaref
Optical and Quantum Electronics 49 (4), 142, 2017
32017
Optical characterization and carriers transfer between localized and delocalized states in Si-doped GaAsN/GaAs epilayer
NMG F. Hassen, Z. Zaaboub, M. Bouhlel, M. Naffouti, H. Maaref
3*2015
Deterministic three-dimensional self-assembly of Si through a rimless and topology-preserving dewetting regime
M Naffouti, M Salvalaglio, T David, JB Claude, M Bollani, A Voigt, ...
Physical Review Materials 3 (10), 103402, 2019
22019
Cross-section doping topography of 4H-SiC VJFETs by various techniques
K Tsagaraki, M Nafouti, H Peyre, K Vamvoukakis, N Makris, M Kayambaki, ...
Materials Science Forum 924, 653-656, 2018
22018
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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