| A novel 4H–SiC MESFET with recessed gate and channel SM Razavi, SH Zahiri, SE Hosseini Superlattices and Microstructures 60, 516-523, 2013 | 23 | 2013 |
| Recessed p-buffer layer SiC MESFET: A novel device for improving DC and RF characteristics SM Razavi, AA Orouji, SE Hosseini Materials science in semiconductor processing 15 (5), 516-521, 2012 | 19 | 2012 |
| Investigation of the novel attributes in double recessed gate SiC MESFETs at drain side AA Orouji, SM Razavi, SE Hosseini, HA Moghadam Semiconductor science and technology 26 (11), 115001, 2011 | 16 | 2011 |
| Recessed insulator and barrier AlGaN/GaN HEMT: A novel structure for improving DC and RF characteristics SM Razavi, SH Zahiri, SE Hosseini Pramana 88, 1-6, 2017 | 11 | 2017 |
| A novel AlGaN/GaN HEMT with a p-layer in the barrier SM Razavi, SH Zahiri, SE Hosseini Physica E: Low-dimensional Systems and Nanostructures 54, 24-29, 2013 | 10 | 2013 |
| An Improved 4H-SiCMESFET with Un-Doped and Recessed Area under the Gate for High Power Applications SM Razavi Silicon 13, 3889-3897, 2021 | 6 | 2021 |
| New GaN based HEMT with Si3N4 or un-doped region in the barrier for high power applications SM Razavi, ST Pour, P Najari Superlattices and Microstructures 118, 221-229, 2018 | 5 | 2018 |
| Investigation of AlGaN/GaN HEMTs with step aluminum mole fraction and doping level in the barrier layer SM Razavi, SE Hosseini 2017 Iranian Conference on Electrical Engineering (ICEE), 164-169, 2017 | 1 | 2017 |
| Electrical features in high electron mobility transistors with recessed gate and undoped region in the barrier SM Razavi, SH Zahiri, S Karimi Pramana 92, 1-5, 2019 | | 2019 |
| بررسی تغییرات مشخصه‌های الکتریکی ترانزیستورهای دوقطبی پیوندی، قبل و پس از پرتودهی گاما امینی, وجدانی نقره ئیان, رضوی سنجش و ایمنی پرتو 7 (5), 31-38, 2018 | | 2018 |
| Investigation of AlGaN/GaN HEMT Electrical Characteristics with Recessed Insulator and Barrier at Both Source and Drain Sides SM Razavi, SH Zahiri, A Nejati Electrical Engineering (ICEE), Iranian Conference on, 6-10, 2018 | | 2018 |
| بررسی مشخصه های الکتریکی AlGaN/GaN-HEMT با وارد کردن لایه P در لایه سد در دو سمت سورس و درین سید محمد رضوی, سید حمید ظهیری, حسینی مهندسی برق و مهندسی کامپیوتر ایران 15, 2017 | | 2017 |
| ترانزیستور MESFET کربید سیلیسیم با گیت تو رفته در سمت سورس و درین و لایه مدفون N در کانال سید محمد رضوی و سید حمید ظهیری نشریه مهندسی برق و مهندسی کامپیوتر ایران, 137-142, 2017 | | 2017 |
| DC and RF characteristics of SiC MESFETs with different channel doping concentrations under the gate M Razavi, AA Orouji, SE Hosseini, HA Moghadam ECAI 2011-International Conference–4th Edition Electronics, Computers and …, 2011 | | 2011 |
| A novel SiC MESFET with recessed P-Buffer layer M Razavi, AA Orouji, SE Hosseini ECAI 2011-International Conference–4th Edition Electronics, Computers and …, 2011 | | 2011 |
| Investigation of double recessed gate SiC MESFETs with different recessed lengths M Razavi, AA Orouji, SE Hosseini 2011 19th Iranian Conference on Electrical Engineering, 1-4, 2011 | | 2011 |
Seyed Hamid ZahiriProf. of Electronics, University of BirjandVerified email at birjand.ac.ir
