H.-S. Philip Wong
H.-S. Philip Wong
Professor of Electrical Engineering, Stanford University
Verified email at stanford.edu
TitleCited byYear
Metal–oxide RRAM
HSP Wong, HY Lee, S Yu, YS Chen, Y Wu, PS Chen, B Lee, FT Chen, ...
Proceedings of the IEEE 100 (6), 1951-1970, 2012
Device scaling limits of Si MOSFETs and their application dependencies
DJ Frank, RH Dennard, E Nowak, PM Solomon, Y Taur, HSP Wong
Proceedings of the IEEE 89 (3), 259-288, 2001
Phase change memory
HSP Wong, S Raoux, SB Kim, J Liang, JP Reifenberg, B Rajendran, ...
Proceedings of the IEEE 98 (12), 2201-2227, 2010
CMOS scaling into the nanometer regime
Y Taur, DA Buchanan, W Chen, DJ Frank, KE Ismail, SH Lo, ...
Proceedings of the IEEE 85 (4), 486-504, 1997
Carbon nanotube computer
MM Shulaker, G Hills, N Patil, H Wei, HY Chen, HSP Wong, S Mitra
Nature 501 (7468), 526-530, 2013
Beyond the conventional transistor
HSP Wong
IBM Journal of Research and Development 46 (2.3), 133-168, 2002
Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing
D Kuzum, RGD Jeyasingh, B Lee, HSP Wong
Nano letters 12 (5), 2179-2186, 2012
A compact SPICE model for carbon-nanotube field-effect transistors including nonidealities and its application—Part I: Model of the intrinsic channel region
J Deng, HSP Wong
IEEE Transactions on Electron Devices 54 (12), 3186-3194, 2007
Nanoscale cmos
HSP Wong, DJ Frank, PM Solomon, CHJ Wann, JJ Welser
Proceedings of the IEEE 87 (4), 537-570, 1999
A compact SPICE model for carbon-nanotube field-effect transistors including nonidealities and its application—Part II: Full device model and circuit performance benchmarking
J Deng, HSP Wong
IEEE Transactions on Electron Devices 54 (12), 3195-3205, 2007
Synaptic electronics: materials, devices and applications
D Kuzum, S Yu, HSP Wong
Nanotechnology 24 (38), 382001, 2013
MoS2 transistors with 1-nanometer gate lengths
SB Desai, SR Madhvapathy, AB Sachid, JP Llinas, Q Wang, GH Ahn, ...
Science 354 (6308), 99-102, 2016
An electronic synapse device based on metal oxide resistive switching memory for neuromorphic computation
S Yu, Y Wu, R Jeyasingh, D Kuzum, HSP Wong
IEEE Transactions on Electron Devices 58 (8), 2729-2737, 2011
Device design considerations for double-gate, ground-plane, and single-gated ultra-thin SOI MOSFET's at the 25 nm channel length generation
HSP Wong, DJ Frank, PM Solomon
International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998
Technology and device scaling considerations for CMOS imagers
HS Wong
IEEE Transactions on electron Devices 43 (12), 2131-2142, 1996
Carbon nanotube and graphene device physics
HSP Wong, D Akinwande
Cambridge University Press, 2011
The end of CMOS scaling: toward the introduction of new materials and structural changes to improve MOSFET performance
T Skotnicki, JA Hutchby, TJ King, HSP Wong, F Boeuf
IEEE Circuits and Devices Magazine 21 (1), 16-26, 2005
Characteristics and device design of sub-100 nm strained Si N-and PMOSFETs
K Rim, J Chu, H Chen, KA Jenkins, T Kanarsky, K Lee, A Mocuta, H Zhu, ...
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2002
Generalized scale length for two-dimensional effects in MOSFETs
DJ Frank, Y Taur, HSP Wong
IEEE Electron Device Letters 19 (10), 385-387, 1998
Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET's
HS Wong, MH White, TJ Krutsick, RV Booth
Solid-State Electronics 30 (9), 953-968, 1987
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