A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure J Zheng, L Wang, X Wu, Z Hao, C Sun, B Xiong, Y Luo, Y Han, J Wang, ...
Applied Physics Letters 109 (24), 2016
50 2016 Digital alloy InAlAs avalanche photodiodes J Zheng, Y Yuan, Y Tan, Y Peng, AK Rockwell, SR Bank, AW Ghosh, ...
Journal of Lightwave Technology 36 (17), 3580-3585, 2018
42 2018 Green and red light-emitting diodes based on multilayer InGaN/GaN dots grown by growth interruption method W Lv, L Wang, J Wang, Y Xing, J Zheng, D Yang, Z Hao, Y Luo
Japanese Journal of Applied Physics 52 (8S), 08JG13, 2013
38 2013 Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys Y Yuan, J Zheng, Y Tan, Y Peng, AK Rockwell, SR Bank, A Ghosh, ...
Photonics Research 6 (8), 794-799, 2018
35 2018 AlInAsSb impact ionization coefficients Y Yuan, J Zheng, AK Rockwell, SD March, SR Bank, JC Campbell
IEEE Photonics Technology Letters 31 (4), 315-318, 2019
31 2019 Strain effect on band structure of InAlAs digital alloy J Zheng, Y Tan, Y Yuan, AW Ghosh, JC Campbell
Journal of Applied Physics 125 (8), 2019
22 2019 Characterization of band offsets in AlxIn1-xAsySb1-y alloys with varying Al composition J Zheng, AH Jones, Y Tan, AK Rockwell, S March, SZ Ahmed, CA Dukes, ...
Applied Physics Letters 115 (12), 2019
20 2019 III-V on silicon avalanche photodiodes by heteroepitaxy Y Yuan, D Jung, K Sun, J Zheng, AH Jones, JE Bowers, JC Campbell
Optics letters 44 (14), 3538-3541, 2019
17 2019 Comparison of Different Period Digital Alloy Al InAsSb Avalanche Photodiodes Y Yuan, AK Rockwell, Y Peng, J Zheng, SD March, AH Jones, M Ren, ...
Journal of Lightwave Technology 37 (14), 3647-3654, 2019
17 2019 A GaN p–i–p–i–n Ultraviolet Avalanche Photodiode ZHENG Ji-Yuan(郑纪元)1, WANG Lai(汪莱)1**, HAO Zhi-Biao(郝智彪)1, LUO Yi(罗 ...
CHIN. PHYS. LETT. 29 (9), 097804, 2012
15 2012 Near ultraviolet enhanced 4H-SiC Schottky diode Y Shen, AH Jones, Y Yuan, J Zheng, Y Peng, B VanMil, K Olver, ...
Applied Physics Letters 115 (26), 261101, 2019
14 2019 Triple-mesa avalanche photodiodes with very low surface dark current Y Yuan, Y Li, J Abell, JY Zheng, K Sun, C Pinzone, JC Campbell
Optics Express 27 (16), 22923-22929, 2019
13 2019 Theoretical study on interfacial impact ionization in AlN/GaN periodically stacked structure J Zheng, L Wang, X Wu, Z Hao, C Sun, B Xiong, Y Luo, Y Han, J Wang, ...
Applied Physics Express 10 (7), 071002, 2017
13 2017 Low-temperature-dependent property in an avalanche photodiode based on GaN/AlN periodically-stacked structure J Zheng, L Wang, D Yang, J Yu, X Meng, Z Hao, C Sun, B Xiong, Y Luo, ...
Scientific reports 6 (1), 35978, 2016
13 2016 The influence of structure parameter on GaN/AlN periodically stacked structure avalanche photodiode J Zheng, L Wang, X Wu, Z Hao, C Sun, B Xiong, Y Luo, Y Han, J Wang, ...
IEEE Photonics Technology Letters 29 (24), 2187-2190, 2017
12 2017 A future perspective on in-sensor computing W Pan, J Zheng, L Wang, Y Luo
Engineering 14 (7), 7797, 2022
10 2022 Full band Monte Carlo simulation of AlInAsSb digital alloys J Zheng, SZ Ahmed, Y Yuan, A Jones, Y Tan, AK Rockwell, SD March, ...
InfoMat 2 (6), 1236-1240, 2020
10 2020 Study on spin and optical polarization in a coupled InGaN/GaN quantum well and quantum dots structure J Yu, L Wang, D Yang, J Zheng, Y Xing, Z Hao, Y Luo, C Sun, Y Han, ...
Scientific Reports 6 (1), 35597, 2016
9 2016 Dynamic-quenching of a single-photon avalanche photodetector using an adaptive resistive switch J Zheng, X Xue, C Ji, Y Yuan, K Sun, D Rosenmann, L Wang, J Wu, ...
Nature Communications 13 (1), 1517, 2022
8 2022 Photoelectrochemistry of self‐limiting electrodeposition of Ni film onto GaAs Y Xu, R Ahmed, J Zheng, ER Hoglund, Q Lin, E Berretti, A Lavacchi, ...
Small 16 (39), 2003112, 2020
7 2020