Lan Yu
Lan Yu
Process and Device integration engineer, AMAT
Email verificata su amat.com
Titolo
Citata da
Citata da
Anno
All-semiconductor plasmonic nanoantennas for infrared sensing
S Law, L Yu, A Rosenberg, D Wasserman
Nano letters 13 (9), 4569-4574, 2013
1582013
Wafer-Scale Production of Uniform InAsyP1–y Nanowire Array on Silicon for Heterogeneous Integration
JC Shin, A Lee, P Katal Mohseni, DY Kim, L Yu, JH Kim, HJ Kim, WJ Choi, ...
ACS nano 7 (6), 5463-5471, 2013
502013
Epitaxial growth of engineered metals for mid-infrared plasmonics
S Law, L Yu, D Wasserman
Journal of Vacuum Science & Technology B, Nanotechnology and…, 2013
502013
All-semiconductor negative-index plasmonic absorbers
S Law, C Roberts, T Kilpatrick, L Yu, T Ribaudo, EA Shaner, V Podolskiy, ...
Physical review letters 112 (1), 017401, 2014
472014
Mid-wave infrared narrow bandwidth guided mode resonance notch filter
Y Zhong, Z Goldenfeld, K Li, W Streyer, L Yu, L Nordin, N Murphy, ...
Optics letters 42 (2), 223-226, 2017
262017
Damage-Free Smooth-Sidewall InGaAs Nanopillar Array by Metal-Assisted Chemical Etching
L Kong, Y Song, JD Kim, L Yu, D Wasserman, WK Chim, SY Chiam, X Li
ACS nano 11 (10), 10193-10205, 2017
222017
Parasitic resistance reduction strategies for advanced CMOS FinFETs beyond 7nm
H Wu, O Gluschenkov, G Tsutsui, C Niu, K Brew, C Durfee, C Prindle, ...
2018 IEEE International Electron Devices Meeting (IEDM), 35.4. 1-35.4. 4, 2018
212018
Enhanced Optical Transmission through MacEtch‐Fabricated Buried Metal Gratings
R Liu, X Zhao, C Roberts, L Yu, PK Mohseni, X Li, V Podolskiy, ...
Advanced Materials 28 (7), 1441-1448, 2016
182016
Mid-infrared electroluminescence from InAs type-I quantum wells grown on InAsP/InP metamorphic buffers
D Jung, L Yu, D Wasserman, M Larry Lee
Journal of Applied Physics 118 (18), 183101, 2015
152015
Room-temperature mid-infrared quantum well lasers on multi-functional metamorphic buffers
D Jung, L Yu, S Dev, D Wasserman, ML Lee
Applied Physics Letters 109 (21), 211101, 2016
132016
2.8 μm emission from type-I quantum wells grown on InAsxP1−x/InP metamorphic graded buffers
D Jung, Y Song, L Yu, D Wasserman, M Larry Lee
Applied Physics Letters 101 (25), 251107, 2012
132012
Mid-infrared emission from In (Ga) Sb layers on InAs (Sb)
R Liu, Y Zhong, L Yu, H Kim, S Law, JM Zuo, D Wasserman
Optics express 22 (20), 24466-24477, 2014
92014
Electroluminescence from quantum dots fabricated with nanosphere lithography
L Yu, S Law, D Wasserman
Applied Physics Letters 101 (10), 103105, 2012
92012
A novel dry selective etch of SiGe for the enablement of high performance logic stacked gate-all-around nanosheet devices
N Loubet, S Kal, C Alix, S Pancharatnam, H Zhou, C Durfee, M Belyansky, ...
2019 IEEE International Electron Devices Meeting (IEDM), 11.4. 1-11.4. 4, 2019
72019
Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications
J Zhang, J Frougier, A Greene, X Miao, L Yu, R Vega, P Montanini, ...
2019 IEEE International Electron Devices Meeting (IEDM), 11.6. 1-11.6. 4, 2019
72019
External resistance reduction by nanosecond laser anneal in Si/SiGe CMOS technology
O Gluschenkov, H Wu, K Brew, C Niu, L Yu, Y Sulehria, S Choi, C Durfee, ...
2018 IEEE International Electron Devices Meeting (IEDM), 35.3. 1-35.3. 4, 2018
62018
Controlling quantum dot energies using submonolayer bandstructure engineering
L Yu, D Jung, S Law, J Shen, JJ Cha, ML Lee, D Wasserman
Applied Physics Letters 105 (8), 081103, 2014
62014
Advanced arsenic doped epitaxial growth for source drain extension formation in scaled FinFET devices
S Mochizuki, B Colombeau, L Yu, A Dube, S Choi, M Stolfi, Z Bi, F Chang, ...
2018 IEEE International Electron Devices Meeting (IEDM), 35.2. 1-35.2. 4, 2018
52018
Engineering carrier lifetimes in type-II In (Ga) Sb/InAs mid-IR emitters
L Yu, Y Zhong, S Dev, D Wasserman
Journal of Vacuum Science & Technology B, Nanotechnology and…, 2017
52017
Design and growth of multi-functional InAsP metamorphic buffers for mid-infrared quantum well lasers on InP
D Jung, L Yu, S Dev, D Wasserman, ML Lee
Journal of Applied Physics 125 (8), 082537, 2019
12019
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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