| Electrically driven mid-submicrometre pixelation of InGaN micro-light-emitting diode displays for augmented-reality glasses J Park, JH Choi, K Kong, JH Han, JH Park, N Kim, E Lee, D Kim, J Kim, ... Nature Photonics 15 (6), 449-455, 2021 | 99 | 2021 |
| Nitride-based semiconductor light-emitting device and method of manufacturing the same S Yoon, C Sone, JW Lee, J Kim US Patent 7,541,206, 2009 | 88 | 2009 |
| Electrically driven quantum dot/wire/well hybrid light‐emitting diodes YH Ko, JH Kim, LH Jin, SM Ko, BJ Kwon, J Kim, T Kim, YH Cho Advanced materials 23 (45), 5364-5369, 2011 | 80 | 2011 |
| Effect of V-shaped pit size on the reverse leakage current of InGaN/GaN light-emitting diodes J Kim, J Kim, Y Tak, S Chae, JY Kim, Y Park IEEE electron device letters 34 (11), 1409-1411, 2013 | 67 | 2013 |
| Highly efficient yellow photoluminescence from {11–22} InGaN multiquantum-well grown on nanoscale pyramid structure T Kim, J Kim, MS Yang, S Lee, Y Park, UI Chung, Y Cho Applied Physics Letters 97 (24), 2010 | 43 | 2010 |
| Analysis of forward tunneling current in InGaN/GaN multiple quantum well light-emitting diodes grown on Si (111) substrate J Kim, Y Tak, J Kim, S Chae, JY Kim, Y Park Journal of Applied Physics 114 (1), 2013 | 41 | 2013 |
| Red emission of InGaN/GaN double heterostructures on GaN nanopyramid structures YH Ko, JH Kim, SH Gong, J Kim, T Kim, YH Cho ACS Photonics 2 (4), 515-520, 2015 | 40 | 2015 |
| Investigation of reverse leakage characteristics of InGaN/GaN light-emitting diodes on silicon J Kim, JY Kim, Y Tak, J Kim, HG Hong, M Yang, S Chae, J Park, Y Park, ... IEEE electron device letters 33 (12), 1741-1743, 2012 | 39 | 2012 |
| Nitride-based semiconductor light emitting device with light extraction layer formed within JW Lee, H Jeon, S Yoon, J Kim US Patent 7,888,694, 2011 | 20 | 2011 |
| Low-temperature growth of GaN by atomic nitrogen based on a dielectric barrier discharge J Kim, D Byun, J Kim, DW Kum Journal of crystal growth 210 (4), 478-486, 2000 | 20 | 2000 |
| A novel growth method of freestanding GaN using in situ removal of Si substrate in hydride vapor phase epitaxy M Lee, D Mikulik, J Kim, Y Tak, J Kim, M Shim, Y Park, U Chung, E Yoon, ... Applied Physics Express 6 (12), 125502, 2013 | 19 | 2013 |
| Semiconductor light emitting device and method of manufacturing the same JW Lee, Y Sung, H Paek, HS Kim, J Kim, S Yoon US Patent 7,935,554, 2011 | 19 | 2011 |
| Light-emitting device including nanorod and method of manufacturing the same KK Kim, J Kim, Y Park US Patent App. 12/076,608, 2009 | 14 | 2009 |
| Semiconductor buffer structure, semiconductor device including the semiconductor buffer structure, and method of manufacturing the semiconductor device using the semiconductor … JY Kim, Y Tak, JK Kim, J Kim, Y Park, S Chae US Patent 9,337,381, 2016 | 11 | 2016 |
| Superlattice structure, semiconductor device including the same, and method of manufacturing the semiconductor device DH Lim, J Kim, JK Kim, Y Tak US Patent App. 13/837,992, 2013 | 11 | 2013 |
| Development of highly robust nano-mixed HfxAlyOz dielectrics for TiN/HfxAlyOz/TiN capacitor applicable to 65nm generation DRAMs DS Kil, K Hong, KJ Lee, J Kim, HS Song, KS Park, JS Roh, HC Sohn, ... Digest of Technical Papers-Symposium on VLSI Technology, 126-127, 2004 | 11 | 2004 |
| Semiconductor light emitting device including hole injection layer JK Kim, J Kim, JY Kim, Y Park, Y Tak US Patent 9,257,599, 2016 | 9 | 2016 |
| Semiconductor buffer structure, semiconductor device including the same, and method of manufacturing semiconductor device using semiconductor buffer structure Y Tak, JK Kim, J Kim, JY Kim, J Lee, H Choi US Patent 9,136,430, 2015 | 9 | 2015 |
| Light-emitting device packages and methods of manufacturing the same JY Kim, JK Kim, J Kim, M Yang, S Chae, Y Tak, H Hong US Patent App. 13/835,921, 2014 | 8 | 2014 |
| Polychromatic white LED using GaN nano pyramid structure T Kim, J Kim, M Yang, Y Park, UI Chung, Y Ko, Y Cho Light-Emitting Diodes: Materials, Devices, and Applications for Solid State …, 2013 | 8 | 2013 |
