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- Stanislav SolovievIdeal Semiconductor Devices, Inc.Email verificata su idealsemi.com
- Larry RowlandAymont Technology, Inc.Email verificata su ieee.org
- Edward B StokesCharlotteEmail verificata su uncc.edu
- Alexey VertEmail verificata su sematech.org
- Xianan Cao (X. A. Cao)West Virginia UniversityEmail verificata su mix.wvu.edu
- Manijeh RazeghiNorthwestern UniversityEmail verificata su eecs.northwestern.edu
- Patrick KungUniversity of AlabamaEmail verificata su eng.ua.edu
- Ho-Young ChaHongik universityEmail verificata su hongik.ac.kr
- Oliver AmbacherGips-Schüle-Professur für Leistungselektronik, Universität FreiburgEmail verificata su inatech.uni-freiburg.de
- Majdeddin Alidr MicroelectronicsEmail verificata su albaath-univ.edu.sy
- Avinash KashyapRenesas ElectronicsEmail verificata su renesas.com
- JPR DavidUniversity of SheffieldEmail verificata su sheffield.ac.uk
- Reza GhandiPrincipal Engineer at GE ResearchEmail verificata su ge.com
- Abasifreke EbongProfessor of Electrical and Computer Engineering, UNC CharlotteEmail verificata su uncc.edu
- Jo Shien NgProfessor of Semiconductor Devices, University of SheffieldEmail verificata su sheffield.ac.uk
- Ljubisa D. StevanovicCTO of Silicon Carbide Works at GE Global ResearchEmail verificata su ge.com
- Radislav A. PotyrailoGE Global ResearchEmail verificata su crd.ge.com
- Liangchun YuGEEmail verificata su ge.com
- Liang YinGeneral Electric Global ResearchEmail verificata su ge.com
- Yang Sui, Ph.D.Keter Research LLCEmail verificata su keterresearch.com