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Talieh S. Ghiasi
Talieh S. Ghiasi
Verified email at fas.harvard.edu
Title
Cited by
Cited by
Year
Charge-to-Spin Conversion by the Rashba-Edelstein Effect in 2D van der Waals Heterostructures up to Room Temperature
TS Ghiasi, AA Kaverzin, PJ Blah, BJ van Wees
Nano letters 19 (9), 2019
1942019
Large proximity-induced spin lifetime anisotropy in transition-metal dichalcogenide/graphene heterostructures
TS Ghiasi, J Ingla-Aynés, AA Kaverzin, BJ Van Wees
Nano letters 17 (12), 7528-7532, 2017
1932017
Electrical and thermal generation of spin currents by magnetic bilayer graphene
TS Ghiasi, AA Kaverzin, AH Dismukes, DK de Wal, X Roy, BJ van Wees
Nature nanotechnology 16 (7), 788-794, 2021
932021
Symmetry regimes for circular photocurrents in monolayer MoSe2
J Quereda, TS Ghiasi, JS You, J van den Brink, BJ van Wees, ...
Nature communications 9 (1), 3346, 2018
662018
Observation of bright and dark exciton transitions in monolayer MoSe2 by photocurrent spectroscopy
J Quereda, TS Ghiasi, FA Van Zwol, CH Van der Wal, BJ Van Wees
2D Materials 5 (1), 015004, 2017
292017
Bilayer h-BN barriers for tunneling contacts in fully-encapsulated monolayer MoSe2 field-effect transistors
TS Ghiasi, J Quereda, BJ van Wees
2D Materials 6 (1), 015002, 2018
252018
Organic solar cell based on photosystem I pigment-protein complex, fabrication and optimization
A Zeynali, TS Ghiasi, G Riazi, R Ajeian
Organic Electronics 51, 341-348, 2017
242017
The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors
J Quereda, J Hidding, TS Ghiasi, BJ van Wees, CH van der Wal, ...
npj 2D Materials and Applications 5 (1), 13, 2021
132021
Semiconductor channel-mediated photodoping in h-BN encapsulated monolayer MoSe2 phototransistors
J Quereda, TS Ghiasi, CH Van der Wal, BJ Van Wees
2D Materials 6 (2), 025040, 2019
112019
Spin injection by spin–charge coupling in proximity induced magnetic graphene
AA Kaverzin, TS Ghiasi, AH Dismukes, X Roy, BJ Van Wees
2D Materials 9 (4), 045003, 2022
102022
Specular electron focusing between gate-defined quantum point contacts in bilayer graphene
J Ingla-Aynés, ALR Manesco, TS Ghiasi, S Volosheniuk, K Watanabe, ...
Nano Letters 23 (12), 2023
52023
Charge Transfer and Asymmetric Coupling of MoSe2 Valleys to the Magnetic Order of CrSBr
C Serati de Brito, PE Faria Junior, TS Ghiasi, J Ingla-Aynés, CR Rabahi, ...
Nano Letters 23 (23), 11073–11081, 2023
22023
A ballistic electron source with magnetically-controlled valley polarization in bilayer graphene
J Ingla-Aynés, ALR Manesco, TS Ghiasi, K Watanabe, T Taniguchi, ...
arXiv preprint arXiv:2310.15293, 2023
22023
Nitrogen-vacancy magnetometry of CrSBr by diamond membrane transfer
TS Ghiasi, M Borst, S Kurdi, BG Simon, I Bertelli, C Boix-Constant, ...
npj 2D Materials and Applications 7 (62), 2023
12023
MoRe Electrodes with 10 nm Nanogaps for Electrical Contact to Atomically Precise Graphene Nanoribbons
D Bouwmeester, TS Ghiasi, G Borin Barin, K Müllen, P Ruffieux, R Fasel, ...
ACS applied nano materials 6 (15), 13935-13944, 2023
12023
Towards fully two-dimensional spintronic devices
AA Kaverzin, TS Ghiasi, AH Dismukes, X Roy, BJ van Wees
arXiv preprint arXiv:2202.09972, 2022
12022
Quantum Anomalous Hall and Spin Hall Effects in Magnetic Graphene
TS Ghiasi, D Petrosyan, J Ingla-Aynés, T Bras, S Mañas-Valero, ...
arXiv preprint arXiv:2312.07515, 2023
2023
Electron-jet collimation by electrostatically defined quantum point contacts in bilayer graphene
J Ingla-Aynés, T Ghiasi, A Manesco, H van der Zant
APS March Meeting Abstracts 2023, B20. 011, 2023
2023
Spin-polarized conductivity and spin-dependent Seebeck effect in magnetized graphene
T Ghiasi, A Kaverzin, A Dismukes, D de Wal, X Roy, B Van Wees
APS March Meeting Abstracts 2021, M36. 001, 2021
2021
Schakelen met elektronspin dankzij tweedimensionale materialen
TS Ghiasi, B van Wees
Nederlands Tijdschrift voor Natuurkunde 84 (8), 14-18, 2018
2018
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Articles 1–20