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Luke Nyakiti
Luke Nyakiti
Associate Professor, Texas A&M University, Materials Engineer: Depts. of Marine Eng.;Material Sc
Email verificata su tamu.edu - Home page
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Sensitive room-temperature terahertz detection via the photothermoelectric effect in graphene
X Cai, AB Sushkov, RJ Suess, MM Jadidi, GS Jenkins, LO Nyakiti, ...
Nature nanotechnology 9 (10), 814-819, 2014
6042014
Plasmon-enhanced terahertz photodetection in graphene
X Cai, AB Sushkov, MM Jadidi, LO Nyakiti, RL Myers-Ward, DK Gaskill, ...
Nano letters 15 (7), 4295-4302, 2015
1222015
Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates
WS Hwang, P Zhao, K Tahy, LO Nyakiti, VD Wheeler, RL Myers-Ward, ...
APL materials 3 (1), 2015
1042015
Chemically resolved interface structure of epitaxial graphene on SiC (0001)
JD Emery, B Detlefs, HJ Karmel, LO Nyakiti, DK Gaskill, MC Hersam, ...
Physical review letters 111 (21), 215501, 2013
982013
Fluorine functionalization of epitaxial graphene for uniform deposition of thin high-κ dielectrics
V Wheeler, N Garces, L Nyakiti, R Myers-Ward, G Jernigan, J Culbertson, ...
Carbon 50 (6), 2307-2314, 2012
952012
Graphene FETs for zero-bias linear resistive FET mixers
JS Moon, HC Seo, M Antcliffe, D Le, C McGuire, A Schmitz, LO Nyakiti, ...
IEEE Electron Device Letters 34 (3), 465-467, 2013
772013
Epitaxial growth of III–nitride/graphene heterostructures for electronic devices
N Nepal, VD Wheeler, TJ Anderson, FJ Kub, MA Mastro, RL Myers-Ward, ...
Applied Physics Express 6 (6), 061003, 2013
762013
Bilayer graphene grown on 4H-SiC (0001) step-free mesas
LO Nyakiti, RL Myers-Ward, VD Wheeler, EA Imhoff, FJ Bezares, H Chun, ...
Nano letters 12 (4), 1749-1756, 2012
722012
Enabling graphene-based technologies: Toward wafer-scale production of epitaxial graphene
LO Nyakiti, VD Wheeler, NY Garces, RL Myers-Ward, CR Eddy, ...
Mrs Bulletin 37 (12), 1149-1157, 2012
712012
Lateral graphene heterostructure field-effect transistor
JS Moon, H Seo, F Stratan, M Antcliffe, A Schmitz, RS Ross, AA Kiselev, ...
IEEE Electron Device Letters 34 (9), 1190-1192, 2013
652013
Epitaxial growth of cubic and hexagonal InN thin films via plasma-assisted atomic layer epitaxy
N Nepal, NA Mahadik, LO Nyakiti, SB Qadri, MJ Mehl, JK Hite, CR Eddy Jr
Crystal growth & design 13 (4), 1485-1490, 2013
622013
Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
VD Wheeler, N Nepal, DR Boris, SB Qadri, LO Nyakiti, A Lang, A Koehler, ...
Chemistry of Materials 32 (3), 1140-1152, 2020
592020
Graphene FET-based zero-bias RF to millimeter-wave detection
JS Moon, HC Seo, M Antcliffe, S Lin, C McGuire, D Le, LO Nyakiti, ...
IEEE Electron Device Letters 33 (10), 1357-1359, 2012
512012
Thermal oxidation of single crystalline aluminum nitride
J Chaudhuri, L Nyakiti, RG Lee, Z Gu, JH Edgar, JG Wen
Materials Characterization 58 (8-9), 672-679, 2007
472007
Water affinity to epitaxial graphene: the impact of layer thickness
CE Giusca, V Panchal, M Munz, VD Wheeler, LO Nyakiti, RL Myers‐Ward, ...
Advanced Materials Interfaces 2 (16), 1500252, 2015
442015
Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy
N Nepal, DS Katzer, BP Downey, VD Wheeler, LO Nyakiti, DF Storm, ...
Journal of Vacuum Science & Technology A 38 (6), 2020
402020
Characterization of strain-rate sensitivity and grain boundary structure in nanocrystalline gold-copper alloys
LO Nyakiti, AF Jankowski
Metallurgical and Materials Transactions A 41, 838-847, 2010
362010
Fabrication of top-gated epitaxial graphene nanoribbon FETs using hydrogen-silsesquioxane
WS Hwang, K Tahy, LO Nyakiti, VD Wheeler, R Myers-Ward, CR Eddy, ...
Journal of Vacuum Science & Technology B 30 (3), 2012
332012
Native oxide and hydroxides and their implications for bulk AlN crystal growth
JH Edgar, L Du, L Nyakiti, J Chaudhuri
Journal of crystal growth 310 (17), 4002-4006, 2008
322008
Plasma-based chemical modification of epitaxial graphene with oxygen functionalities
SC Hernández, VD Wheeler, MS Osofsky, GG Jernigan, VK Nagareddy, ...
Surface and Coatings Technology 241, 8-12, 2014
282014
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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