K. E. J. Goh
K. E. J. Goh
Verified email at imre.a-star.edu.sg - Homepage
Cited by
Cited by
Toward atomic-scale device fabrication in silicon using scanning probe microscopy
FJ Ruess, L Oberbeck, MY Simmons, KEJ Goh, AR Hamilton, T Hallam, ...
Nano Letters 4 (10), 1969-1973, 2004
Electrically conductive filament for 3D-printed circuits and sensors
SW Kwok, KHH Goh, ZD Tan, STM Tan, WW Tjiu, JY Soh, ZJG Ng, ...
Applied Materials Today 9, 167-175, 2017
Realization of atomically controlled dopant devices in silicon
FJ Rueß, W Pok, TCG Reusch, MJ Butcher, KEJ Goh, L Oberbeck, ...
Small 3 (4), 563-567, 2007
Evidence of spin frustration in a vanadium diselenide monolayer magnet
PKJ Wong, W Zhang, F Bussolotti, X Yin, TS Herng, L Zhang, YL Huang, ...
Advanced materials 31 (23), 1901185, 2019
Influence of doping density on electronic transport in degenerate Si: P δ-doped layers
KEJ Goh, L Oberbeck, MY Simmons, AR Hamilton, MJ Butcher
Physical Review B 73 (3), 035401, 2006
Effect of encapsulation temperature on -doped layers
KEJ Goh, L Oberbeck, MY Simmons, AR Hamilton, RG Clark
Applied physics letters 85 (21), 4953-4955, 2004
Modification of Vapor Phase Concentrations in MoS2 Growth Using a NiO Foam Barrier
YF Lim, K Priyadarshi, F Bussolotti, PK Gogoi, X Cui, M Yang, J Pan, ...
ACS nano 12 (2), 1339-1349, 2018
One-dimensional conduction properties of highly phosphorus-doped planar nanowires patterned by scanning probe microscopy
FJ Ruess, B Weber, KEJ Goh, O Klochan, AR Hamilton, MY Simmons
Physical Review B 76 (8), 085403, 2007
Scanning probe microscopy for silicon device fabrication
MY Simmons, FJ Ruess, KEJ Goh, T Hallam, SR Schofield, L Oberbeck, ...
Molecular Simulation 31 (6-7), 505-515, 2005
Electronic properties of atomically abrupt tunnel junctions in silicon
FJ Ruess, W Pok, KEJ Goh, AR Hamilton, MY Simmons
Physical Review B 75 (12), 121303, 2007
Bilayer gate dielectric study by scanning tunneling microscopy
YC Ong, DS Ang, KL Pey, SJ O’Shea, KEJ Goh, C Troadec, CH Tung, ...
Applied Physics Letters 91 (10), 102905, 2007
Electron-electron interactions in highly disordered two-dimensional systems
KEJ Goh, MY Simmons, AR Hamilton
Physical Review B 77 (23), 235410, 2008
Far out-of-equilibrium spin populations trigger giant spin injection into atomically thin MoS2
L Cheng, X Wang, W Yang, J Chai, M Yang, M Chen, Y Wu, X Chen, ...
Nature Physics 15, 347-351, 2019
Interlayer interactions in 2D WS 2/MoS 2 heterostructures monolithically grown by in situ physical vapor deposition
W Yang, H Kawai, M Bosman, B Tang, J Chai, W Le Tay, J Yang, HL Seng, ...
Nanoscale 10 (48), 22927-22936, 2018
Roadmap on finding chiral valleys: screening 2D materials for valleytronics
F Bussolotti, H Kawai, ZE Ooi, V Chellappan, D Thian, ALC Pang, ...
Nano Futures 2 (3), 032001, 2018
Electrically-excited surface plasmon polaritons with directionality control
Z Dong, HS Chu, D Zhu, W Du, YA Akimov, WP Goh, T Wang, KEJ Goh, ...
ACS photonics 2 (3), 385-391, 2015
Narrow, highly P-doped, planar wires in silicon created by scanning probe microscopy
FJ Rueß, KEJ Goh, MJ Butcher, TCG Reusch, L Oberbeck, B Weber, ...
Nanotechnology 18 (4), 044023, 2006
The use of etched registration markers to make four-terminal electrical contacts to STM-patterned nanostructures
FJ Rueß, L Oberbeck, KEJ Goh, MJ Butcher, E Gauja, AR Hamilton, ...
Nanotechnology 16 (10), 2446, 2005
Atomic-scale silicon device fabrication
MY Simmons, FJ Ruess, KEJ Goh, W Pok, T Hallam, MJ Butcher, ...
International journal of nanotechnology 5 (2-3), 352-369, 2008
Electrical Doping Effect of Vacancies on Monolayer MoS2
J Yang, H Kawai, CPY Wong, KEJ Goh
The Journal of Physical Chemistry C 123 (5), 2933-2939, 2019
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