Corey Cochrane
Corey Cochrane
Jet Propulsion Laboratory, California Institute of Technology
Email verificata su jpl.nasa.gov
Titolo
Citata da
Citata da
Anno
Atomic-scale defects involved in the negative-bias temperature instability
JP Campbell, PM Lenahan, CJ Cochrane, AT Krishnan, S Krishnan
IEEE Transactions on Device and Materials Reliability 7 (4), 540-557, 2007
1002007
An electrically detected magnetic resonance study of performance limiting defects in SiC metal oxide semiconductor field effect transistors
CJ Cochrane, PM Lenahan, AJ Lelis
Journal of Applied Physics 109 (1), 014506, 2011
872011
Identification of a silicon vacancy as an important defect in 4H SiC metal oxide semiconducting field effect transistor using spin dependent recombination
CJ Cochrane, PM Lenahan, AJ Lelis
Applied Physics Letters 100 (2), 023509, 2012
622012
An accurate lifetime analysis methodology incorporating governing NBTI mechanisms in high-k/SiO2 gate stacks
A Neugroschel, G Bersuker, R Choi, C Cochrane, P Lenahan, D Heh, ...
2006 International Electron Devices Meeting, 1-4, 2006
552006
Vectorized magnetometer for space applications using electrical readout of atomic scale defects in silicon carbide
CJ Cochrane, J Blacksberg, MA Anders, PM Lenahan
Nature Scientific Reports 37077 (doi:10.1038/srep37077), http://www.nature …, 2016
382016
Zero-field detection of spin dependent recombination with direct observation of electron nuclear hyperfine interactions in the absence of an oscillating electromagnetic field
CJ Cochrane, PM Lenahan
Journal of Applied Physics 112 (12), 123714, 2012
312012
Miniaturized time-resolved Raman spectrometer for planetary science based on a fast single photon avalanche diode detector array
J Blacksberg, E Alerstam, Y Maruyama, CJ Cochrane, GR Rossman
Applied Optics 55 (4), 739-748, 2016
292016
Deep level defects which limit current gain in SiC bipolar junction transistors
CJ Cochrane, PM Lenahan, AJ Lelis
Applied physics letters 90 (12), 123501, 2007
272007
Defects and electronic transport in hydrogenated amorphous SiC films of interest for low dielectric constant back end of the line dielectric systems
TA Pomorski, BC Bittel, CJ Cochrane, PM Lenahan, J Bielefeld, SW King
Journal of Applied Physics 114 (7), 074501, 2013
262013
The effect of nitric oxide anneals on silicon vacancies at and very near the interface of 4H SiC metal oxide semiconducting field effect transistors using electrically detected …
CJ Cochrane, PM Lenahan, AJ Lelis
Applied Physics Letters 102 (19), 193507, 2013
252013
Relationship Between the 4H-SiC/SiO2 Interface Structure and Electronic Properties Explored by Electrically Detected Magnetic Resonance
MA Anders, PM Lenahan, CJ Cochrane, AJ Lelis
IEEE Transactions on Electron Devices 62 (2), 301-308, 2014
242014
Spin counting in electrically detected magnetic resonance via low-field defect state mixing
CJ Cochrane, PM Lenahan
Applied Physics Letters 104 (9), 093503, 2014
212014
Using FMCW Doppler Radar to Detect Targets up to the Maximum Unambiguous Range
K Cooper, S Durden, CJ Cochrane
IEEE Geoscience and Remote Sensing Letters, 1-5, 2017
202017
Direct observation of lifetime killing defects in SiC epitaxial layers through spin dependent recombination in bipolar junction transistors
CJ Cochrane, PM Lenahan, AJ Lelis
Journal of Applied Physics 105 (6), 064502, 2009
182009
Band diagram for low-k/Cu interconnects: The starting point for understanding back-end-of-line (BEOL) electrical reliability
MJ Mutch, T Pomorski, BC Bittel, CJ Cochrane, PM Lenahan, X Liu, ...
Microelectronics Reliability 63, 201-213, 2016
172016
Detection of interfacial Pb centers in Si/SiO2 metal-oxide-semiconducting field-effect transistors via zero-field spin dependent recombination with observation of …
CJ Cochrane, PM Lenahan
Applied Physics Letters 103 (5), 053506, 2013
162013
Observation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination
CJ Cochrane, PM Lenahan, JP Campbell, G Bersuker, A Neugroschel
Applied physics letters 90 (12), 123502, 2007
112007
Electrically detected magnetic resonance studies of processing variations in 4H SiC based MOSFETs
CJ Cochrane, PM Lenahan, AJ Lelis
Materials Science Forum 600, 719-722, 2009
92009
Real time exponentially weighted recursive least squares adaptive signal averaging for enhancing the sensitivity of continuous wave magnetic resonance
CJ Cochrane, PM Lenahan
Journal of Magnetic Resonance 195 (1), 17-22, 2008
82008
Zero-and low-field transport detection system
C Cochrane, PM Lenahan
US Patent 9,810,756, 2017
72017
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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