Jo Shien Ng
Jo Shien Ng
Professor of Semiconductor Devices, University of Sheffield
Verified email at sheffield.ac.uk - Homepage
Title
Cited by
Cited by
Year
Improved performance of multilayer quantum-dot lasers using a high-growth-temperature spacer layer
HY Liu, IR Sellers, TJ Badcock, DJ Mowbray, MS Skolnick, KM Groom, ...
Applied Physics Letters 85 (5), 704-706, 2004
3032004
Design and performance of an InGaAs-InP single-photon avalanche diode detector
S Pellegrini, RE Warburton, LJJ Tan, JS Ng, AB Krysa, K Groom, ...
IEEE journal of quantum electronics 42 (4), 397-403, 2006
1382006
Room-temperature light emission from quantum dots with a thin GaAsSb cap layer
HY Liu, MJ Steer, TJ Badcock, DJ Mowbray, MS Skolnick, F Suarez, ...
Journal of applied physics 99 (4), 046104, 2006
1132006
Impact ionization coefficients in 4H-SiC
WS Loh, BK Ng, JS Ng, SI Soloviev, HY Cha, PM Sandvik, CM Johnson, ...
IEEE Transactions on electron devices 55 (8), 1984-1990, 2008
852008
Localization effects and band gap of GaAsBi alloys
AR Mohmad, F Bastiman, CJ Hunter, RD Richards, SJ Sweeney, JS Ng, ...
physica status solidi (b) 251 (6), 1276-1281, 2014
752014
Excess avalanche noise in In0. 52Al0. 48As
YL Goh, ARJ Marshall, DJ Massey, JS Ng, CH Tan, M Hopkinson, ...
IEEE journal of quantum electronics 43 (5-6), 503-507, 2007
732007
The effect of Bi composition to the optical quality of GaAs1−xBix
AR Mohmad, F Bastiman, CJ Hunter, JS Ng, SJ Sweeney, JPR David
Applied Physics Letters 99 (4), 042107, 2011
722011
Effects of rapid thermal annealing on GaAs1-xBix alloys
AR Mohmad, F Bastiman, CJ Hunter, R Richards, SJ Sweeney, JS Ng, ...
Applied Physics Letters 101 (1), 012106, 2012
662012
Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth
F Bastiman, ARB Mohmad, JS Ng, JPR David, SJ Sweeney
Journal of crystal growth 338 (1), 57-61, 2012
602012
Avalanche multiplication in InAlAs
YL Goh, DJ Massey, ARJ Marshall, JS Ng, CH Tan, WK Ng, GJ Rees, ...
IEEE Transactions on Electron Devices 54 (1), 11-16, 2006
592006
Temperature dependence of avalanche breakdown in InP and InAlAs
LJJ Tan, DSG Ong, JS Ng, CH Tan, SK Jones, Y Qian, JPR David
IEEE Journal of Quantum Electronics 46 (8), 1153-1157, 2010
542010
Avalanche noise characteristics in submicron InP diodes
LJJ Tan, JS Ng, CH Tan, JPR David
IEEE Journal of Quantum Electronics 44 (4), 378-382, 2008
532008
Effect of dead space on avalanche speed [APDs]
JS Ng, CH Tan, BK Ng, PJ Hambleton, JPR David, GJ Rees, AH You, ...
IEEE Transactions on Electron Devices 49 (4), 544-549, 2002
532002
Improving optical properties of 1.55 μm GaInNAs/GaAs multiple quantum wells with Ga (In) NAs barrier and space layer
HY Liu, M Hopkinson, P Navaretti, M Gutierrez, JS Ng, JPR David
Applied physics letters 83 (24), 4951-4953, 2003
522003
Absorption Characteristics ofDiodes in the Near-Infrared
CJ Hunter, F Bastiman, AR Mohmad, R Richards, JS Ng, SJ Sweeney, ...
IEEE Photonics Technology Letters 24 (23), 2191-2194, 2012
502012
Field dependence of impact ionization coefficients in In/sub 0.53/Ga/sub 0.47/As
JS Ng, CH Tan, JPR David, G Hill, GJ Rees
IEEE Transactions on Electron Devices 50 (4), 901-905, 2003
472003
Photoluminescence investigation of high quality on GaAs
AR Mohmad, F Bastiman, JS Ng, SJ Sweeney, JPR David
Applied Physics Letters 98 (12), 122107, 2011
402011
Temperature dependence of AlGaAs soft X-ray detectors
AM Barnett, DJ Bassford, JE Lees, JS Ng, CH Tan, JPR David
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2010
382010
Fabrication of InAs photodiodes with reduced surface leakage current
ARJ Marshall, CH Tan, JPR David, JS Ng, M Hopkinson
Optical Materials in Defence Systems Technology IV 6740, 67400H, 2007
332007
A varied shaping time noise analysis of Al0. 8Ga0. 2As and GaAs soft X-ray photodiodes coupled to a low-noise charge sensitive preamplifier
AM Barnett, JE Lees, DJ Bassford, JS Ng
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2012
322012
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