Robert M. Farrell
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Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
SP DenBaars, D Feezell, K Kelchner, S Pimputkar, CC Pan, CC Yen, ...
Acta Materialia 61 (3), 945-951, 2013
Demonstration of a semipolar green light emitting diode
R Sharma, PM Pattison, H Masui, RM Farrell, TJ Baker, BA Haskell, F Wu, ...
Applied Physics Letters 87 (23), 231110, 2005
Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices
RM Farrell, EC Young, F Wu, SP DenBaars, JS Speck
Semiconductor Science and Technology 27 (2), 024001, 2012
Technique for the growth and fabrication of semipolar (Ga, A1, In, B) N thin films, heterostructures, and devices
RM Farrell Jr, TJ Baker, A Chakraborty, BA Haskell, PM Pattison, ...
US Patent 7,846,757, 2010
Demonstration of nonpolar m-plane InGaN/GaN laser diodes
MC Schmidt, KC Kim, RM Farrell, DF Feezell, DA Cohen, M Saito, K Fujito, ...
Japanese journal of applied physics 46 (3L), L190, 2007
High internal and external quantum efficiency InGaN/GaN solar cells
E Matioli, C Neufeld, M Iza, SC Cruz, AA Al-Heji, X Chen, RM Farrell, ...
Applied Physics Letters 98 (2), 021102, 2011
Optimization of laser bar orientation for nonpolar and semipolar (Ga, Al, In, B) N diode lasers
RM Farrell, MC Schmidt, KC Kim, H Masui, DF Feezell, JS Speck, ...
US Patent 7,839,903, 2010
Electrically-pumped (Ga, In, Al) N vertical-cavity surface-emitting laser
DF Feezell, DA Cohen, RM Farrell, M Ishida, S Nakamura
US Patent 7,480,322, 2009
Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than+/-15 degrees in the C-direction
PS Hsu, KM Kelchner, RM Farrell, DA Haeger, H Ohta, A Tyagi, ...
US Patent 9,077,151, 2015
Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes
DF Feezell, MC Schmidt, KC Kim, RM Farrell, DA Cohen, JS Speck, ...
US Patent 8,211,723, 2012
High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm
RM Farrell, CJ Neufeld, SC Cruz, JR Lang, M Iza, S Keller, S Nakamura, ...
Applied Physics Letters 98 (20), 201107, 2011
4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication
C Lee, C Zhang, M Cantore, RM Farrell, SH Oh, T Margalith, JS Speck, ...
Optics express 23 (12), 16232-16237, 2015
AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm
A Tyagi, RM Farrell, KM Kelchner, CY Huang, PS Hsu, DA Haeger, ...
Applied Physics Express 3 (1), 011002, 2009
AlGaN-cladding-free nonpolar InGaN/GaN laser diodes
DF Feezell, MC Schmidt, RM Farrell, KC Kim, M Saito, K Fujito, DA Cohen, ...
Japanese journal of applied physics 46 (4L), L284, 2007
2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system
C Lee, C Shen, HM Oubei, M Cantore, B Janjua, TK Ng, RM Farrell, ...
Optics express 23 (23), 29779-29787, 2015
Formation and reduction of pyramidal hillocks on -plane GaN
A Hirai, Z Jia, MC Schmidt, RM Farrell, SP DenBaars, S Nakamura, ...
Applied Physics Letters 91 (19), 191906, 2007
Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes
RM Farrell, DF Feezell, MC Schmidt, DA Haeger, KM Kelchner, K Iso, ...
Japanese Journal of Applied Physics 46 (8L), L761, 2007
Effects of built-in polarization on InGaN-GaN vertical-cavity surface-emitting lasers
J Piprek, R Farrell, S DenBaars, S Nakamura
IEEE photonics technology letters 18 (1), 7-9, 2005
High luminous flux from single crystal phosphor-converted laser-based white lighting system
M Cantore, N Pfaff, RM Farrell, JS Speck, S Nakamura, SP DenBaars
Optics Express 24 (2), A215-A221, 2016
Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture
JT Leonard, DA Cohen, BP Yonkee, RM Farrell, T Margalith, S Lee, ...
Applied Physics Letters 107 (1), 011102, 2015
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