Doubling the critical temperature of La1.9 Sr0.1 CuO4 using epitaxial strain JP Locquet, J Perret, J Fompeyrine, E Mächler, JW Seo, G Van Tendeloo
Nature 394 (6692), 453-456, 1998
777 1998 Direct observation of the alignment of ferromagnetic spins by antiferromagnetic spins F Nolting, A Scholl, J Stöhr, JW Seo, J Fompeyrine, H Siegwart, ...
Nature 405 (6788), 767-769, 2000
578 2000 Observation of antiferromagnetic domains in epitaxial thin films A Scholl, J Stohr, J Luning, JW Seo, J Fompeyrine, H Siegwart, ...
Science 287 (5455), 1014-1016, 2000
394 2000 Structural phase transition in YBa2Cu3O7− δ: the role of dimensionality for high temperature superconductivity IK Schuller, DG Hinks, MA Beno, DW Capone II, L Soderholm, JP Locquet, ...
Solid state communications 63 (5), 385-388, 1987
251 1987 Direct growth of carbon nanotubes on carbon fibers: Effect of the CVD parameters on the degradation of mechanical properties of carbon fibers N De Greef, L Zhang, A Magrez, L Forró, JP Locquet, I Verpoest, JW Seo
Diamond and Related Materials 51, 39-48, 2015
169 2015 High-K dielectrics for the gate stack JP Locquet, C Marchiori, M Sousa, J Fompeyrine, JW Seo
Journal of Applied Physics 100 (5), 2006
164 2006 Antiferromagnetic LaFeO3 thin films and their effect on exchange bias JW Seo, EE Fullerton, F Nolting, A Scholl, J Fompeyrine, JP Locquet
Journal of Physics: Condensed Matter 20 (26), 264014, 2008
139 2008 Determination of the antiferromagnetic spin axis in epitaxial J Lüning, F Nolting, A Scholl, H Ohldag, JW Seo, J Fompeyrine, ...
Physical Review B 67 (21), 214433, 2003
130 2003 Band-edge high-performance high-k/metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond TC Chen, G Shahidi, S Guha, M Ieong, MP Chudzik, R Jammy, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 178-179, 2006
120 2006 Field-effect transistors with SrHfO3 as gate oxide C Rossel, B Mereu, C Marchiori, D Caimi, M Sousa, A Guiller, H Siegwart, ...
Applied physics letters 89 (5), 2006
116 * 2006 Block‐by‐block deposition: A new growth method for complex oxide thin films JP Locquet, A Catana, E Mächler, C Gerber, JG Bednorz
Applied physics letters 64 (3), 372-374, 1994
114 1994 Interface formation and defect structures in epitaxial JW Seo, J Fompeyrine, A Guiller, G Norga, C Marchiori, H Siegwart, ...
Applied Physics Letters 83 (25), 5211-5213, 2003
87 2003 Carbon nanotube-grafted carbon fiber polymer composites: damage characterization on the micro-scale L Zhang, N De Greef, G Kalinka, B Van Bilzen, JP Locquet, I Verpoest, ...
Composites Part B: Engineering 126, 202-210, 2017
86 2017 SrHfO3 as gate dielectric for future CMOS technology C Rossel, M Sousa, C Marchiori, J Fompeyrine, D Webb, D Caimi, ...
Microelectronic engineering 84 (9-10), 1869-1873, 2007
84 2007 Beam energy considerations for gold nano-particle enhanced radiation treatment F Van den Heuvel, JP Locquet, S Nuyts
Physics in Medicine & Biology 55 (16), 4509, 2010
83 2010 Enhancement-mode buried-channel In0. 7Ga0. 3As/In0. 52Al0. 48 MOSFETs with high-κ gate dielectrics Y Sun, EW Kiewra, SJ Koester, N Ruiz, A Callegari, KE Fogel, DK Sadana, ...
IEEE electron device letters 28 (6), 473-475, 2007
81 2007 Optical properties of epitaxial SrHfO3 thin films grown on Si M Sousa, C Rossel, C Marchiori, H Siegwart, D Caimi, JP Locquet, ...
Journal of Applied Physics 102 (10), 2007
74 2007 Variation of the in-plane penetration depth JP Locquet, Y Jaccard, A Cretton, EJ Williams, F Arrouy, E Mächler, ...
Physical Review B 54 (10), 7481, 1996
74 1996 Tensile strained GeSn on Si by solid phase epitaxy RR Lieten, JW Seo, S Decoster, A Vantomme, S Peters, KC Bustillo, ...
Applied physics letters 102 (5), 2013
73 2013 Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and α-Si∕ SiO2 interlayers SJ Koester, EW Kiewra, Y Sun, DA Neumayer, JA Ott, M Copel, ...
Applied physics letters 89 (4), 2006
72 2006 