Emanuele Rimini
Emanuele Rimini
CNR-IMM
Verified email at imm.cnr.it
Title
Cited by
Cited by
Year
Ion beam handbook for material analysis
JW Mayer, E Rimini
Elsevier, 2012
5512012
A melting model for pulsing‐laser annealing of implanted semiconductors
P Baeri, SU Campisano, G Foti, E Rimini
Journal of Applied Physics 50 (2), 788-797, 1979
4711979
Ion-beam-induced epitaxial crystallization and amorphization in silicon
F Priolo, E Rimini
Materials Science Reports 5 (7-8), 321-379, 1990
2411990
Ion irradiation and defect formation in single layer graphene
G Compagnini, F Giannazzo, S Sonde, V Raineri, E Rimini
Carbon 47 (14), 3201-3207, 2009
2132009
Ion implantation: basics to device fabrication
E Rimini
Springer Science & Business Media, 1994
2011994
Amorphous-to-crystal transition of nitrogen- and oxygen-doped films studied by in situ resistance measurements
S Privitera, E Rimini, R Zonca
Applied physics letters 85 (15), 3044-3046, 2004
1862004
Voids in silicon by He implantation: From basic to applications
V Raineri, M Saggio, E Rimini
Journal of Materials Research 15 (7), 1449-1477, 2000
1742000
Arsenic diffusion in silicon melted by high‐power nanosecond laser pulsing
P Baeri, SU Campisano, G Foti, E Rimini
Applied Physics Letters 33 (2), 137-140, 1978
1481978
Silicon planar technology for single-photon optical detectors
E Sciacca, AC Giudice, D Sanfilippo, F Zappa, S Lombardo, R Consentino, ...
IEEE Transactions on Electron Devices 50 (4), 918-925, 2003
1212003
Screening length and quantum capacitance in graphene by scanning probe microscopy
F Giannazzo, S Sonde, V Raineri, E Rimini
Nano letters 9 (1), 23-29, 2009
1162009
He-vacancy interactions in Si and their influence on bubble formation and evolution
V Raineri, S Coffa, E Szilagyi, J Gyulai, E Rimini
Physical Review B 61 (2), 937, 2000
1112000
How far will silicon nanocrystals push the scaling limits of NVMs technologies?
B De Salvo, C Gerardi, S Lombardo, T Baron, L Perniola, D Mariolle, ...
IEEE International Electron Devices Meeting 2003, 26.1. 1-26.1. 4, 2003
1092003
Mechanisms of amorphization in ion implanted crystalline silicon
SU Campisano, S Coffa, V Raineri, F Priolo, E Rimini
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1993
1031993
Kinetics of phase formation in Au—A1 thin films
SU Campisano, G Foti, E Rimini, SS Lau, JW Mayer
Philosophical Magazine 31 (4), 903-917, 1975
991975
Dechanneling by dislocations in ion-implanted Al
ST Picraux, E Rimini, G Foti, SU Campisano
Physical Review B 18 (5), 2078, 1978
921978
Segregation effects in Cu-implanted Si after laser-pulse melting
P Baeri, SU Campisano, G Foti, E Rimini
Physical Review Letters 41 (18), 1246, 1978
901978
Dependence of trapping and segregation of indium in silicon on the velocity of the liquid‐solid interface
P Baeri, JM Poate, SU Campisano, G Foti, E Rimini, AG Cullis
Applied Physics Letters 37 (10), 912-914, 1980
891980
Mapping the density of scattering centers limiting the electron mean free path in graphene
F Giannazzo, S Sonde, RL Nigro, E Rimini, V Raineri
Nano letters 11 (11), 4612-4618, 2011
802011
Gettering of metals by He induced voids in silicon
V Raineri, A Battaglia, E Rimini
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995
801995
Solute trapping by moving interface in ion‐implanted silicon
SU Campisano, G Foti, P Baeri, MG Grimaldi, E Rimini
Applied Physics Letters 37 (8), 719-722, 1980
801980
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