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Faiza Afroz Faria
Faiza Afroz Faria
Verified email at intel.com
Title
Cited by
Cited by
Year
InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts andof 370 GHz
Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ...
IEEE Electron Device Letters 33 (7), 988-990, 2012
4152012
MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05
J Guo, G Li, F Faria, Y Cao, R Wang, J Verma, X Gao, S Guo, E Beam, ...
IEEE Electron device letters 33 (4), 525-527, 2012
1752012
Ultrascaled InAlN/GaN high electron mobility transistors with cutoff frequency of 400 GHz
Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, B Song, ...
Japanese Journal of Applied Physics 52 (8S), 08JN14, 2013
1272013
New tunneling features in polar III-nitride resonant tunneling diodes
J Encomendero, FA Faria, SM Islam, V Protasenko, S Rouvimov, ...
Physical Review X 7 (4), 041017, 2017
702017
Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy
F Afroz Faria, J Guo, P Zhao, G Li, P Kumar Kandaswamy, M Wistey, ...
Applied Physics Letters 101 (3), 2012
642012
Ultrathin body GaN-on-insulator quantum well FETs with regrown ohmic contacts
G Li, R Wang, J Guo, J Verma, Z Hu, Y Yue, F Faria, Y Cao, M Kelly, ...
IEEE electron device letters 33 (5), 661-663, 2012
542012
InGaN channel high-electron-mobility transistors with InAlGaN barrier and fT/fmax of 260/220 GHz
R Wang, G Li, G Karbasian, J Guo, F Faria, Z Hu, Y Yue, J Verma, ...
Applied Physics Express 6 (1), 016503, 2012
522012
Effect of fringing capacitances on the RF performance of GaN HEMTs with T-gates
HGX B. Song, B. Sensale-Rodriguez, R. Wang, J. Guo, Z. Hu, Y. Yue, F. Faria ...
IEEE TRANSACTIONS ON ELECTRON DEVICES 61 (3), 747-754, 2014
472014
Low temperature AlN growth by MBE and its application in HEMTs
FA Faria, K Nomoto, Z Hu, S Rouvimov, HG Xing, D Jena
Journal of Crystal Growth 425, 133-137, 2015
282015
Repeatable room temperature negative differential conductance in GaN/AlN resonant tunneling diodes
J Encomendero, FA Faria, SM Islam, V Protasenko, S Rouvimov, P Fay, ...
arXiv preprint arXiv:1606.08100, 2016
62016
MBE Growth of GaN Heterostructures for High Performance HEMTs
FA Faria
University Of Notre Dame, 2015
2015
Ultra-scaled GaN HEMTs with AlN barrier
HG Xing, E Beam, Y Cao, D Deen, T Fang, F Faria, P Fay, S Ganguly, ...
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