InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts andof 370 GHz Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ... IEEE Electron Device Letters 33 (7), 988-990, 2012 | 415 | 2012 |
MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 J Guo, G Li, F Faria, Y Cao, R Wang, J Verma, X Gao, S Guo, E Beam, ... IEEE Electron device letters 33 (4), 525-527, 2012 | 175 | 2012 |
Ultrascaled InAlN/GaN high electron mobility transistors with cutoff frequency of 400 GHz Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, B Song, ... Japanese Journal of Applied Physics 52 (8S), 08JN14, 2013 | 127 | 2013 |
New tunneling features in polar III-nitride resonant tunneling diodes J Encomendero, FA Faria, SM Islam, V Protasenko, S Rouvimov, ... Physical Review X 7 (4), 041017, 2017 | 70 | 2017 |
Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy F Afroz Faria, J Guo, P Zhao, G Li, P Kumar Kandaswamy, M Wistey, ... Applied Physics Letters 101 (3), 2012 | 64 | 2012 |
Ultrathin body GaN-on-insulator quantum well FETs with regrown ohmic contacts G Li, R Wang, J Guo, J Verma, Z Hu, Y Yue, F Faria, Y Cao, M Kelly, ... IEEE electron device letters 33 (5), 661-663, 2012 | 54 | 2012 |
InGaN channel high-electron-mobility transistors with InAlGaN barrier and fT/fmax of 260/220 GHz R Wang, G Li, G Karbasian, J Guo, F Faria, Z Hu, Y Yue, J Verma, ... Applied Physics Express 6 (1), 016503, 2012 | 52 | 2012 |
Effect of fringing capacitances on the RF performance of GaN HEMTs with T-gates HGX B. Song, B. Sensale-Rodriguez, R. Wang, J. Guo, Z. Hu, Y. Yue, F. Faria ... IEEE TRANSACTIONS ON ELECTRON DEVICES 61 (3), 747-754, 2014 | 47 | 2014 |
Low temperature AlN growth by MBE and its application in HEMTs FA Faria, K Nomoto, Z Hu, S Rouvimov, HG Xing, D Jena Journal of Crystal Growth 425, 133-137, 2015 | 28 | 2015 |
Repeatable room temperature negative differential conductance in GaN/AlN resonant tunneling diodes J Encomendero, FA Faria, SM Islam, V Protasenko, S Rouvimov, P Fay, ... arXiv preprint arXiv:1606.08100, 2016 | 6 | 2016 |
MBE Growth of GaN Heterostructures for High Performance HEMTs FA Faria University Of Notre Dame, 2015 | | 2015 |
Ultra-scaled GaN HEMTs with AlN barrier HG Xing, E Beam, Y Cao, D Deen, T Fang, F Faria, P Fay, S Ganguly, ... | | |