| The critical thickness of InGaN on (0 0 0 1) GaN M Leyer, J Stellmach, C Meissner, M Pristovsek, M Kneissl Journal of Crystal Growth 310 (23), 4913-4915, 2008 | 130 | 2008 |
| Atomic structure of InP (001)-(2× 4): A dimer reconstruction WG Schmidt, F Bechstedt, N Esser, M Pristovsek, C Schultz, W Richter Physical Review B 57 (23), 14596, 1998 | 111 | 1998 |
| (2× 4) GaP (001) surface: Atomic structure and optical anisotropy AM Frisch, WG Schmidt, J Bernholc, M Pristovsek, N Esser, W Richter Physical Review B 60 (4), 2488, 1999 | 80 | 1999 |
| Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques JT Zettler, K Haberland, M Zorn, M Pristovsek, W Richter, P Kurpas, ... Journal of crystal growth 195 (1-4), 151-162, 1998 | 74 | 1998 |
| Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes Y Robin, SY Bae, TV Shubina, M Pristovsek, EA Evropeitsev, DA Kirilenko, ... Scientific reports 8 (1), 7311, 2018 | 66 | 2018 |
| Surface diffusion and layer morphology of (11-22) GaN grown by metal-organic vapor phase epitaxy S Ploch, T Wernicke, DV Dinh, M Pristovsek, M Kneissl Journal of Applied Physics 111 (3), 033526-033526-5, 2012 | 65 | 2012 |
| Orientation control of (11-22) and (10-1-3) GaN grown on (10-10) sapphire by metal-organic vapor phase epitaxy S Ploch, M Frentrup, T Wernicke, M Pristovsek, M Weyers, M Kneissl Journal of Crystal Growth 312 (15), 2171-2174, 2010 | 64 | 2010 |
| Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy X Yang, S Nitta, K Nagamatsu, SY Bae, HJ Lee, Y Liu, M Pristovsek, ... Journal of Crystal Growth 482, 1-8, 2018 | 63 | 2018 |
| Crystal orientation of GaN layers on (1010) m‐plane sapphire M Frentrup, S Ploch, M Pristovsek, M Kneissl physica status solidi (b) 248 (3), 583-587, 2011 | 62 | 2011 |
| GaP (001) and InP (001): Reflectance anisotropy and surface geometry N Esser, WG Schmidt, J Bernholc, AM Frisch, P Vogt, M Zorn, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1999 | 58 | 1999 |
| Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures TJ Badcock, M Ali, T Zhu, M Pristovsek, RA Oliver, AJ Shields Applied Physics Letters 109 (15), 2016 | 56 | 2016 |
| MOVPE growth of semipolar (112¯ 2) AlN on m-plane (101¯ 0) sapphire J Stellmach, M Frentrup, F Mehnke, M Pristovsek, T Wernicke, M Kneissl Journal of crystal growth 355 (1), 59-62, 2012 | 53 | 2012 |
| Spectroscopic process sensors in MOVPE device production K Haberland, P Kurpas, M Pristovsek, JT Zettler, M Weyers, W Richter Applied Physics-Section A-Materials Science and Processing 68 (3), 309-314, 1999 | 52 | 1999 |
| Surface processes before and during growth of GaAs (001) K Ploska, JT Zettler, W Richter, J Jönsson, F Reinhardt, J Rumberg, ... Journal of crystal growth 145 (1-4), 44-52, 1994 | 50 | 1994 |
| Structural and optical properties of semipolar (112¯ 2) AlGaN grown on (101¯ 0) sapphire by metal–organic vapor phase epitaxy J Stellmach, F Mehnke, M Frentrup, C Reich, J Schlegel, M Pristovsek, ... Journal of crystal growth 367, 42-47, 2013 | 48 | 2013 |
| Scanning-tunneling-microscopy study of InP (001) surfaces prepared by UHV decapping of metal-organic vapor-phase-epitaxy-grown samples N Esser, U Resch-Esser, M Pristovsek, W Richter Physical Review B 53 (20), R13257, 1996 | 45 | 1996 |
| Growth oscillations with monolayer periodicity monitored by ellipsometry during metalorganic vapor phase epitaxy of GaAs (001) JT Zettler, T Wethkamp, M Zorn, M Pristovsek, C Meyne, K Ploska, ... Applied physics letters 67 (25), 3783-3785, 1995 | 45 | 1995 |
| Reflectance anisotropy oscillations during MOCVD and MBE growth of GaAs (001) JT Zettler, J Rumberg, K Ploska, K Stahrenberg, M Pristovsek, W Richter, ... physica status solidi (a) 152 (1), 35-47, 1995 | 44 | 1995 |
| Polarity determination of polar and semipolar (112¯ 2) InN and GaN layers by valence band photoemission spectroscopy D Skuridina, DV Dinh, B Lacroix, P Ruterana, M Hoffmann, Z Sitar, ... Journal of Applied Physics 114 (17), 2013 | 42 | 2013 |
| Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1− xAs growth in MOVPE K Haberland, A Kaluza, M Zorn, M Pristovsek, H Hardtdegen, M Weyers, ... Journal of crystal growth 240 (1-2), 87-97, 2002 | 41 | 2002 |
Michael KneisslProfessor, Institute of Solid State Physics, TU Berlin, GermanyEmail verificata su physik.tu-berlin.de
