Gaudenzio Meneghesso

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Enrico ZanoniProfessor, Electronics, University of PadovaEmail verificata su dei.unipd.it
Matteo MeneghiniFull Professor at the University of PadovaEmail verificata su dei.unipd.it
Carlo De SantiAssistant professor, UNIPDEmail verificata su unipd.it
Matteo BuffoloPostdoctoral researcher, University of PadovaEmail verificata su dei.unipd.it
Nicola TrivellinAssistant professor at University of PadovaEmail verificata su unipd.it
Fabiana RampazzoUniversity of PadovaEmail verificata su dei.unipd.it
Alessandro ChiniProfessor of Electronics, University of Modena and Reggio Emilia, ItalyEmail verificata su unimore.it
Giovanni VerzellesiProfessor of Electronics, University of Modena and Reggio Emilia, ItalyEmail verificata su unimore.it
Davide BisiTransphorm, Inc.Email verificata su transphormusa.com
Marco BarbatoUniversity of PadovaEmail verificata su dei.unipd.it
Andrea CesterDepartment of Information Engineering, Padova UniversityEmail verificata su dei.unipd.it
Alessandro CariaPostdoc reseracher, Department of Information Engineering, University of PadovaEmail verificata su unipd.it
Giovanna MuraDIEE- University of Cagliari- ItalyEmail verificata su diee.unica.it
Francesco PivaPost Doc researcher University of PadovaEmail verificata su unipd.it
Lorenzo TrevisanelloTridonicEmail verificata su tridonic.com
Farid MedjdoubIEMN - CNRSEmail verificata su iemn.fr
Denis MarconimecEmail verificata su imec.be
Maura PavesiDept. of Marhematical, Physical and Computer Sciences - Univ.of Parma ITALYEmail verificata su unipr.it
Michele GoanoProfessor of Electronics, Politecnico di Torino, Dipartimento di Elettronica e TelecomunicazioniEmail verificata su polito.it
Francesco BertazziAssistant Professor, Politecnico di Torino, Dipartimento di Elettronica e TelecomunicazioniEmail verificata su polito.it

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Gaudenzio Meneghesso

University of Padova, Dept. of Information Engineering

Email verificata su dei.unipd.it - Home page

GaN- SiC- Based Power Devices Optoelectronics (LED & Laser) Photovoltaics MEMS Electrostatic Discharge


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018	1201	2018
Reliability of GaN high-electron-mobility transistors: State of the art and perspectives G Meneghesso, G Verzellesi, F Danesin, F Rampazzo, F Zanon, A Tazzoli, ... IEEE Transactions on Device and Materials Reliability 8 (2), 332-343, 2008	796	2008
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies G Verzellesi, D Saguatti, M Meneghini, F Bertazzi, M Goano, ... Journal of Applied Physics 114 (7), 2013	487	2013
Deep-level characterization in GaN HEMTs-Part I: Advantages and limitations of drain current transient measurements D Bisi, M Meneghini, C De Santi, A Chini, M Dammann, P Brueckner, ... IEEE Transactions on electron devices 60 (10), 3166-3175, 2013	436	2013
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs G Meneghesso, G Verzellesi, R Pierobon, F Rampazzo, A Chini, ... IEEE Transactions on Electron Devices 51 (10), 1554-1561, 2004	419	2004
GaN-based power devices: Physics, reliability, and perspectives M Meneghini, C De Santi, I Abid, M Buffolo, M Cioni, RA Khadar, L Nela, ... Journal of Applied Physics 130 (18), 2021	404	2021
A review on the physical mechanisms that limit the reliability of GaN-based LEDs M Meneghini, A Tazzoli, G Mura, G Meneghesso, E Zanoni IEEE Transactions on Electron Devices 57 (1), 108-118, 2009	337	2009
A review on the reliability of GaN-based LEDs M Meneghini, LR Trevisanello, G Meneghesso, E Zanoni IEEE Transactions on Device and Materials Reliability 8 (2), 323-331, 2008	332	2008
Power GaN Devices M Meneghini, G Meneghesso, E Zanoni Cham: Springer International Publishing, 2017	230	2017
Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs G Meneghesso, F Rampazzo, P Kordos, G Verzellesi, E Zanoni IEEE Transactions on Electron Devices 53 (12), 2932-2941, 2006	229	2006
Accelerated life test of high brightness light emitting diodes L Trevisanello, M Meneghini, G Mura, M Vanzi, M Pavesi, G Meneghesso, ... IEEE Transactions on Device and Materials Reliability 8 (2), 304-311, 2008	212	2008
Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements M Meneghini, I Rossetto, D Bisi, A Stocco, A Chini, A Pantellini, C Lanzieri, ... IEEE Transactions on Electron Devices 61 (12), 4070-4077, 2014	185	2014
Investigation of trapping and hot-electron effects in GaN HEMTs by means of a combined electrooptical method M Meneghini, N Ronchi, A Stocco, G Meneghesso, UK Mishra, Y Pei, ... IEEE transactions on electron devices 58 (9), 2996-3003, 2011	184	2011
Technology and reliability of normally-off GaN HEMTs with p-type gate M Meneghini, O Hilt, J Wuerfl, G Meneghesso Energies 10 (2), 153, 2017	175	2017
AlGaN/GaN-based HEMTs failure physics and reliability: Mechanisms affecting gate edge and Schottky junction E Zanoni, M Meneghini, A Chini, D Marcon, G Meneghesso IEEE Transactions on Electron Devices 60 (10), 3119-3131, 2013	174	2013
A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes M Meneghini, N Trivellin, G Meneghesso, E Zanoni, U Zehnder, B Hahn Journal of Applied Physics 106 (11), 2009	172	2009
Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs M Faqir, G Verzellesi, G Meneghesso, E Zanoni, F Fantini IEEE Transactions on Electron Devices 55 (7), 1592-1602, 2008	163	2008
Reliability and parasitic issues in GaN-based power HEMTs: A review G Meneghesso, M Meneghini, I Rossetto, D Bisi, S Stoffels, M Van Hove, ... Semiconductor Science and Technology 31 (9), 093004, 2016	156	2016
Time-dependent failure of GaN-on-Si power HEMTs with p-GaN gate I Rossetto, M Meneghini, O Hilt, E Bahat-Treidel, C De Santi, S Dalcanale, ... IEEE Transactions on Electron Devices 63 (6), 2334-2339, 2016	155	2016
Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias M Meneghini, A Stocco, M Bertin, D Marcon, A Chini, G Meneghesso, ... Applied Physics Letters 100 (3), 2012	154	2012

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