| Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si L Colace, G Masini, F Galluzzi, G Assanto, G Capellini, L Di Gaspare, ... Applied Physics Letters 72 (24), 3175-3177, 1998 | 308 | 1998 |
| SiGe intermixing in Ge/Si (100) islands G Capellini, M De Seta, F Evangelisti Applied Physics Letters 78 (3), 303-305, 2001 | 194 | 2001 |
| Methods of incorporating germanium within CMOS process LC Gunn III, G Capellini, MJ Rattier, TJ Pinguet US Patent 6,887,773, 2005 | 148 | 2005 |
| Ge–Si intermixing in Ge quantum dots on Si (001) and Si (111) F Boscherini, G Capellini, L Di Gaspare, F Rosei, N Motta, S Mobilio Applied Physics Letters 76 (6), 682-684, 2000 | 148 | 2000 |
| Atomic force microscopy lithography as a nanodevice development technique A Notargiacomo, V Foglietti, E Cianci, G Capellini, M Adami, P Faraci, ... Nanotechnology 10 (4), 458, 1999 | 140 | 1999 |
| Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process G Capellini, C Reich, S Guha, Y Yamamoto, M Lisker, M Virgilio, A Ghrib, ... Optics Express 22 (1), 399-410, 2014 | 102 | 2014 |
| Germanium photodetector with 60 GHz bandwidth using inductive gain peaking A Novack, M Gould, Y Yang, Z Xuan, M Streshinsky, Y Liu, G Capellini, ... Optics express 21 (23), 28387-28393, 2013 | 101 | 2013 |
| Low-Energy Yield Spectroscopy as a Novel Technique for Determining Band Offsets: Application to the Heterostructure M Sebastiani, L Di Gaspare, G Capellini, C Bittencourt, F Evangelisti Physical review letters 75 (18), 3352, 1995 | 100 | 1995 |
| Atomic force microscopy study of self-organized Ge islands grown on Si (100) by low pressure chemical vapor deposition G Capellini, L Di Gaspare, F Evangelisti, E Palange Applied physics letters 70 (4), 493-495, 1997 | 99 | 1997 |
| Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach G Capellini, G Kozlowski, Y Yamamoto, M Lisker, C Wenger, G Niu, ... Journal of Applied Physics 113 (1), 013513, 2013 | 96 | 2013 |
| Germanium integrated CMOS wafer and method for manufacturing the same LC Gunn III, G Capellini, G Masini US Patent 7,262,117, 2007 | 92 | 2007 |
| Monolithically integrated high-speed CMOS photonic transceivers T Pinguet, B Analui, E Balmater, D Guckenberger, M Harrison, ... 2008 5th IEEE international conference on group IV photonics, 362-364, 2008 | 91 | 2008 |
| A four-channel, 10Gbps monolithic optical receiver in 130nm CMOS with integrated Ge waveguide photodetectors G Masini, G Capellini, J Witzens, C Gunn Optical Fiber Communication Conference, PDP31, 2007 | 88 | 2007 |
| Radiative recombination and optical gain spectra in biaxially strained -type germanium M Virgilio, CL Manganelli, G Grosso, G Pizzi, G Capellini Physical review B 87 (23), 235313, 2013 | 78 | 2013 |
| High-speed near infrared optical receivers based on Ge waveguide photodetectors integrated in a CMOS process G Masini, S Sahni, G Capellini, J Witzens, C Gunn Advances in Optical Technologies 2008, 1-5, 2008 | 77 | 2008 |
| Ordering self-assembled islands without substrate patterning G Capellini, M De Seta, C Spinella, F Evangelisti Applied physics letters 82 (11), 1772-1774, 2003 | 74 | 2003 |
| Spectroscopic Signatures of AA′ and AB Stacking of Chemical Vapor Deposited Bilayer MoS2 M Xia, B Li, K Yin, G Capellini, G Niu, Y Gong, W Zhou, PM Ajayan, ... ACS nano 9 (12), 12246-12254, 2015 | 73 | 2015 |
| A complete fabrication route for atomic-scale, donor-based devices in single-crystal germanium G Scappucci, G Capellini, B Johnston, WM Klesse, JA Miwa, MY Simmons Nano letters 11 (6), 2272-2279, 2011 | 66 | 2011 |
| Intermixing-promoted scaling of Ge/Si (100) island sizes M De Seta, G Capellini, F Evangelisti, C Spinella Journal of applied physics 92 (1), 614-619, 2002 | 66 | 2002 |
| Atomic force microscopy and photoluminescence study of Ge layers and self‐organized Ge quantum dots on Si (100) E Palange, G Capellini, L Di Gaspare, F Evangelisti Applied physics letters 68 (21), 2982-2984, 1996 | 63 | 1996 |
Thomas SchroederLeibniz-Institut für Kristallzüchtung (IKZ); Professor in Physics at Humboldt Universität zu BerlinVerified email at ikz-berlin.de
