Giovanni Capellini
Giovanni Capellini
Full Professor, Experimental condensed matter Physics, Dip. di Scienze, Università Roma Tre e IHP
Verified email at - Homepage
Cited by
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Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si
L Colace, G Masini, F Galluzzi, G Assanto, G Capellini, L Di Gaspare, ...
Applied Physics Letters 72 (24), 3175-3177, 1998
SiGe intermixing in Ge/Si (100) islands
G Capellini, M De Seta, F Evangelisti
Applied Physics Letters 78 (3), 303-305, 2001
Methods of incorporating germanium within CMOS process
LC Gunn III, G Capellini, MJ Rattier, TJ Pinguet
US Patent 6,887,773, 2005
Ge–Si intermixing in Ge quantum dots on Si (001) and Si (111)
F Boscherini, G Capellini, L Di Gaspare, F Rosei, N Motta, S Mobilio
Applied Physics Letters 76 (6), 682-684, 2000
Atomic force microscopy lithography as a nanodevice development technique
A Notargiacomo, V Foglietti, E Cianci, G Capellini, M Adami, P Faraci, ...
Nanotechnology 10 (4), 458, 1999
Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process
G Capellini, C Reich, S Guha, Y Yamamoto, M Lisker, M Virgilio, A Ghrib, ...
Optics Express 22 (1), 399-410, 2014
Germanium photodetector with 60 GHz bandwidth using inductive gain peaking
A Novack, M Gould, Y Yang, Z Xuan, M Streshinsky, Y Liu, G Capellini, ...
Optics express 21 (23), 28387-28393, 2013
Low-Energy Yield Spectroscopy as a Novel Technique for Determining Band Offsets: Application to the Heterostructure
M Sebastiani, L Di Gaspare, G Capellini, C Bittencourt, F Evangelisti
Physical review letters 75 (18), 3352, 1995
Atomic force microscopy study of self-organized Ge islands grown on Si (100) by low pressure chemical vapor deposition
G Capellini, L Di Gaspare, F Evangelisti, E Palange
Applied physics letters 70 (4), 493-495, 1997
Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach
G Capellini, G Kozlowski, Y Yamamoto, M Lisker, C Wenger, G Niu, ...
Journal of Applied Physics 113 (1), 013513, 2013
Germanium integrated CMOS wafer and method for manufacturing the same
LC Gunn III, G Capellini, G Masini
US Patent 7,262,117, 2007
Monolithically integrated high-speed CMOS photonic transceivers
T Pinguet, B Analui, E Balmater, D Guckenberger, M Harrison, ...
2008 5th IEEE international conference on group IV photonics, 362-364, 2008
A four-channel, 10Gbps monolithic optical receiver in 130nm CMOS with integrated Ge waveguide photodetectors
G Masini, G Capellini, J Witzens, C Gunn
Optical Fiber Communication Conference, PDP31, 2007
Radiative recombination and optical gain spectra in biaxially strained -type germanium
M Virgilio, CL Manganelli, G Grosso, G Pizzi, G Capellini
Physical review B 87 (23), 235313, 2013
High-speed near infrared optical receivers based on Ge waveguide photodetectors integrated in a CMOS process
G Masini, S Sahni, G Capellini, J Witzens, C Gunn
Advances in Optical Technologies 2008, 1-5, 2008
Ordering self-assembled islands without substrate patterning
G Capellini, M De Seta, C Spinella, F Evangelisti
Applied physics letters 82 (11), 1772-1774, 2003
Spectroscopic Signatures of AA′ and AB Stacking of Chemical Vapor Deposited Bilayer MoS2
M Xia, B Li, K Yin, G Capellini, G Niu, Y Gong, W Zhou, PM Ajayan, ...
ACS nano 9 (12), 12246-12254, 2015
A complete fabrication route for atomic-scale, donor-based devices in single-crystal germanium
G Scappucci, G Capellini, B Johnston, WM Klesse, JA Miwa, MY Simmons
Nano letters 11 (6), 2272-2279, 2011
Intermixing-promoted scaling of Ge/Si (100) island sizes
M De Seta, G Capellini, F Evangelisti, C Spinella
Journal of applied physics 92 (1), 614-619, 2002
Atomic force microscopy and photoluminescence study of Ge layers and self‐organized Ge quantum dots on Si (100)
E Palange, G Capellini, L Di Gaspare, F Evangelisti
Applied physics letters 68 (21), 2982-2984, 1996
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