Francesco La Via
Francesco La Via
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Citata da
Richardson’s constant in inhomogeneous silicon carbide Schottky contacts
F Roccaforte, F La Via, V Raineri, R Pierobon, E Zanoni
Journal of applied Physics 93 (11), 9137-9144, 2003
Structural and electrical characterisation of titanium and nickel silicide contacts on silicon carbide
F La Via, F Roccaforte, A Makhtari, V Raineri, P Musumeci, L Calcagno
Microelectronic Engineering 60 (1-2), 269-282, 2002
The NUMEN project: NUclear Matrix Elements for Neutrinoless double beta decay
F Cappuzzello, C Agodi, M Cavallaro, D Carbone, S Tudisco, DL Presti, ...
The European Physical Journal A 54 (5), 72, 2018
4H SiC epitaxial growth with chlorine addition
F La Via, G Galvagno, G Foti, M Mauceri, S Leone, G Pistone, ...
Chemical vapor deposition 12 (8‐9), 509-515, 2006
Highly reproducible ideal SiC Schottky rectifiers: effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier height
F Roccaforte, F La Via, V Raineri, P Musumeci, L Calcagno, ...
Applied Physics A 77 (6), 827-833, 2003
Schottky–ohmic transition in nickel silicide/SiC-4H system: is it really a solved problem?
F La Via, F Roccaforte, V Raineri, M Mauceri, A Ruggiero, P Musumeci, ...
Microelectronic Engineering 70 (2-4), 519-523, 2003
Ohmic contacts to SiC
F Roccaforte, F La Via, V Raineri
International journal of high speed electronics and systems 15 (04), 781-820, 2005
Improvement of high temperature stability of nickel contacts on n-type 6H–SiC
F Roccaforte, F La Via, V Raineri, L Calcagno, P Musumeci
Applied surface science 184 (1-4), 295-298, 2001
Mechanisms of growth and defect properties of epitaxial SiC
F La Via, M Camarda, A La Magna
Applied Physics Reviews 1 (3), 031301, 2014
Thin crystalline 3C-SiC layer growth through carbonization of differently oriented Si substrates
A Severino, G D’arrigo, C Bongiorno, S Scalese, F La Via, G Foti
Journal of Applied Physics 102 (2), 023518, 2007
Structural and electrical properties of Schottky contacts on silicon carbide upon thermal annealing
F Roccaforte, F La Via, A Baeri, V Raineri, L Calcagno, F Mangano
Journal of applied physics 96 (8), 4313-4318, 2004
4H-SiC epitaxial layer growth by trichlorosilane (TCS)
F La Via, G Izzo, M Mauceri, G Pistone, G Condorelli, L Perdicaro, ...
Journal of Crystal Growth 311 (1), 107-113, 2008
Effects of annealing temperature on the degree of inhomogeneity of nickel-silicide/SiC Schottky barrier
L Calcagno, A Ruggiero, F Roccaforte, F La Via
Journal of Applied Physics 98 (2), 023713, 2005
High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates
A Severino, C Bongiorno, N Piluso, M Italia, M Camarda, M Mauceri, ...
Thin Solid Films 518 (6), S165-S169, 2010
High performance SiC detectors for MeV ion beams generated by intense pulsed laser plasmas
M Cutroneo, P Musumeci, M Zimbone, L Torrisi, F La Via, D Margarone, ...
Journal of Materials Research 28 (1), 87, 2013
Heteroepitaxy of -SiC on different on-axis oriented silicon substrates
R Anzalone, A Severino, G D’arrigo, C Bongiorno, G Abbondanza, G Foti, ...
Journal of Applied Physics 105 (8), 084910, 2009
From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction
F La Via, A Severino, R Anzalone, C Bongiorno, G Litrico, M Mauceri, ...
Materials Science in Semiconductor Processing 78, 57-68, 2018
Structural defects in (100) 3C-SiC heteroepitaxy: Influence of the buffer layer morphology on generation and propagation of stacking faults and microtwins
A Severino, C Frewin, C Bongiorno, R Anzalone, SE Saddow, F La Via
Diamond and related materials 18 (12), 1440-1449, 2009
Advanced residual stress analysis and FEM simulation on heteroepitaxial 3C–SiC for MEMS application
R Anzalone, G D'arrigo, M Camarda, C Locke, SE Saddow, F La Via
Journal of microelectromechanical systems 20 (3), 745-752, 2011
Diffusion and outdiffusion of aluminium implanted into silicon
G Galvagno, F La Via, F Priolo, E Rimini
Semiconductor science and technology 8 (4), 488, 1993
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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