| SPECIAL ISSUE PAPERS-Theory of Ballistic Nanotransistors A Rahman, J Guo, S Datta, MS Lundstrom IEEE Transactions on Electron Devices 50 (9), 1853-1864, 2003 | 968 | 2003 |
| Theory of ballistic nanotransistors A Rahman, J Guo, S Datta, MS Lundstrom IEEE Transactions on Electron Devices 50 (9), 1853-1864, 2003 | 966 | 2003 |
| A 10nm high performance and low-power CMOS technology featuring 3rd generation FinFET transistors, Self-Aligned Quad Patterning, contact over active gate … C Auth, A Aliyarukunju, M Asoro, D Bergstrom, V Bhagwat, J Birdsall, ... 2017 IEEE International Electron Devices Meeting (IEDM), 29.1. 1-29.1. 4, 2017 | 414 | 2017 |
| A 22nm SoC platform technology featuring 3-D tri-gate and high-k/metal gate, optimized for ultra low power, high performance and high density SoC applications CH Jan, U Bhattacharya, R Brain, SJ Choi, G Curello, G Gupta, W Hafez, ... 2012 International Electron Devices Meeting, 3.1. 1-3.1. 4, 2012 | 369 | 2012 |
| A 32nm SoC platform technology with 2nd generation high-k/metal gate transistors optimized for ultra low power, high performance, and high density product … CH Jan, M Agostinelli, M Buehler, ZP Chen, SJ Choi, G Curello, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 345 | 2009 |
| A compact scattering model for the nanoscale double-gate MOSFET A Rahman, MS Lundstrom IEEE Transactions on Electron Devices 49 (3), 481-489, 2002 | 245 | 2002 |
| On the validity of the parabolic effective-mass approximation for the IV calculation of silicon nanowire transistors J Wang, A Rahman, A Ghosh, G Klimeck, M Lundstrom IEEE Transactions on Electron Devices 52 (7), 1589-1595, 2005 | 224 | 2005 |
| Intrinsic transistor reliability improvements from 22nm tri-gate technology S Ramey, A Ashutosh, C Auth, J Clifford, M Hattendorf, J Hicks, R James, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 4C. 5.1-4C. 5.5, 2013 | 200 | 2013 |
| Generalized effective-mass approach for -type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers A Rahman, MS Lundstrom, AW Ghosh Journal of applied physics 97 (5), 053702, 2005 | 195 | 2005 |
| Memory cell using BTI effects in high-k metal gate MOS WM Hafez, A Rahman, CH Jan US Patent 8,432,751, 2013 | 156 | 2013 |
| RF CMOS technology scaling in high-k/metal gate era for RF SoC (system-on-chip) applications CH Jan, M Agostinelli, H Deshpande, MA El-Tanani, W Hafez, U Jalan, ... 2010 International Electron Devices Meeting, 27.2. 1-27.2. 4, 2010 | 116 | 2010 |
| Novel channel materials for ballistic nanoscale MOSFETs-bandstructure effects A Rahman, G Klimeck, M Lundstrom IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 4 …, 2005 | 81 | 2005 |
| Novel channel materials for ballistic nanoscale MOSFETs-bandstructure effects A Rahman, G Klimeck, M Lundstrom IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 4 …, 2005 | 81 | 2005 |
| Bandstructure and orientation effects in ballistic Si and Ge nanowire FETs J Wang, A Rahman, G Klimeck, M Lundstrom IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 4 …, 2005 | 74 | 2005 |
| Performance evaluation of ballistic silicon nanowire transistors with atomic-basis dispersion relations J Wang, A Rahman, A Ghosh, G Klimeck, M Lundstrom Applied Physics Letters 86 (9), 093113, 2005 | 74 | 2005 |
| Reliability studies of a 10nm high-performance and low-power CMOS technology featuring 3rd generation FinFET and 5th generation HK/MG A Rahman, J Dacuna, P Nayak, G Leatherman, S Ramey 2018 IEEE International Reliability Physics Symposium (IRPS), 6F. 4-1-6F. 4-6, 2018 | 70 | 2018 |
| Assessment of Ge n-MOSFETs by quantum simulation A Rahman, A Ghosh, M Lundstrom IEEE International Electron Devices Meeting 2003, 19.4. 1-19.4. 4, 2003 | 55 | 2003 |
| A 32nm low power RF CMOS SOC technology featuring high-k/metal gate P VanDerVoorn, M Agostinelli, SJ Choi, G Curello, H Deshpande, ... 2010 Symposium on VLSI Technology, 137-138, 2010 | 46 | 2010 |
| Demand for Child Curative Care in Two Rural Thanas of Bangladesh: Effects of Income and Women’s Employment A Levin, MA Rahman, Z Quayyum, S Routh, B Khuda | 42 | 1998 |
| Bandstructure effects in ballistic nanoscale MOSFETs A Rahman, G Klimeck, TB Boykin, M Lundstrom IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 34 | 2004 |
