SPECIAL ISSUE PAPERS-Theory of Ballistic Nanotransistors A Rahman, J Guo, S Datta, MS Lundstrom
IEEE Transactions on Electron Devices 50 (9), 1853-1864, 2003
973 2003 Theory of ballistic nanotransistors A Rahman, J Guo, S Datta, MS Lundstrom
IEEE Transactions on Electron Devices 50 (9), 1853-1864, 2003
971 2003 A 10nm high performance and low-power CMOS technology featuring 3rd generation FinFET transistors, Self-Aligned Quad Patterning, contact over active gate … C Auth, A Aliyarukunju, M Asoro, D Bergstrom, V Bhagwat, J Birdsall, ...
2017 IEEE International Electron Devices Meeting (IEDM), 29.1. 1-29.1. 4, 2017
414 2017 A 22nm SoC platform technology featuring 3-D tri-gate and high-k/metal gate, optimized for ultra low power, high performance and high density SoC applications CH Jan, U Bhattacharya, R Brain, SJ Choi, G Curello, G Gupta, W Hafez, ...
2012 International Electron Devices Meeting, 3.1. 1-3.1. 4, 2012
369 2012 A 32nm SoC platform technology with 2nd generation high-k/metal gate transistors optimized for ultra low power, high performance, and high density product … CH Jan, M Agostinelli, M Buehler, ZP Chen, SJ Choi, G Curello, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
346 2009 A compact scattering model for the nanoscale double-gate MOSFET A Rahman, MS Lundstrom
IEEE Transactions on Electron Devices 49 (3), 481-489, 2002
245 2002 On the validity of the parabolic effective-mass approximation for the IV calculation of silicon nanowire transistors J Wang, A Rahman, A Ghosh, G Klimeck, M Lundstrom
IEEE Transactions on Electron Devices 52 (7), 1589-1595, 2005
224 2005 Intrinsic transistor reliability improvements from 22nm tri-gate technology S Ramey, A Ashutosh, C Auth, J Clifford, M Hattendorf, J Hicks, R James, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 4C. 5.1-4C. 5.5, 2013
200 2013 Generalized effective-mass approach for -type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers A Rahman, MS Lundstrom, AW Ghosh
Journal of applied physics 97 (5), 053702, 2005
195 2005 Memory cell using BTI effects in high-k metal gate MOS WM Hafez, A Rahman, CH Jan
US Patent 8,432,751, 2013
158 2013 RF CMOS technology scaling in high-k/metal gate era for RF SoC (system-on-chip) applications CH Jan, M Agostinelli, H Deshpande, MA El-Tanani, W Hafez, U Jalan, ...
2010 International Electron Devices Meeting, 27.2. 1-27.2. 4, 2010
116 2010 Novel channel materials for ballistic nanoscale MOSFETs-bandstructure effects A Rahman, G Klimeck, M Lundstrom
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 4 …, 2005
81 2005 Novel channel materials for ballistic nanoscale MOSFETs-bandstructure effects A Rahman, G Klimeck, M Lundstrom
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 4 …, 2005
81 2005 Performance evaluation of ballistic silicon nanowire transistors with atomic-basis dispersion relations J Wang, A Rahman, A Ghosh, G Klimeck, M Lundstrom
Applied Physics Letters 86 (9), 093113, 2005
75 2005 Bandstructure and orientation effects in ballistic Si and Ge nanowire FETs J Wang, A Rahman, G Klimeck, M Lundstrom
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 4 …, 2005
74 2005 Reliability studies of a 10nm high-performance and low-power CMOS technology featuring 3rd generation FinFET and 5th generation HK/MG A Rahman, J Dacuna, P Nayak, G Leatherman, S Ramey
2018 IEEE International Reliability Physics Symposium (IRPS), 6F. 4-1-6F. 4-6, 2018
70 2018 Assessment of Ge n-MOSFETs by quantum simulation A Rahman, A Ghosh, M Lundstrom
IEEE International Electron Devices Meeting 2003, 19.4. 1-19.4. 4, 2003
55 2003 A 32nm low power RF CMOS SOC technology featuring high-k/metal gate P VanDerVoorn, M Agostinelli, SJ Choi, G Curello, H Deshpande, ...
2010 Symposium on VLSI Technology, 137-138, 2010
46 2010 Demand for Child Curative Care in Two Rural Thanas of Bangladesh: Effects of Income and Women’s Employment A Levin, MA Rahman, Z Quayyum, S Routh, B Khuda
42 1998 Bandstructure effects in ballistic nanoscale MOSFETs A Rahman, G Klimeck, TB Boykin, M Lundstrom
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
34 2004