| Iron-Based Layered Superconductor La[O1-xFx]FeAs (x = 0.05−0.12) with Tc = 26 K Y Kamihara, T Watanabe, M Hirano, H Hosono Journal of the American Chemical Society 130 (11), 3296-3297, 2008 | 10034 | 2008 |
| Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors K Nomura, H Ohta, A Takagi, T Kamiya, M Hirano, H Hosono nature 432 (7016), 488-492, 2004 | 8649 | 2004 |
| Amorphous Oxide And Thin Film Transistor H Hosono, M Hirano, H Ota, T Kamiya, K Nomura US Patent App. 10/592,431, 2007 | 3893 | 2007 |
| Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor K Nomura, H Ohta, K Ueda, T Kamiya, M Hirano, H Hosono Science 300 (5623), 1269-1272, 2003 | 3046 | 2003 |
| P-type electrical conduction in transparent thin films of CuAlO2 H Kawazoe, M Yasukawa, H Hyodo, M Kurita, H Yanagi, H Hosono Nature 389 (6654), 939-942, 1997 | 2516 | 1997 |
| Present status of amorphous In–Ga–Zn–O thin-film transistors T Kamiya, K Nomura, H Hosono Science and Technology of Advanced Materials, 2010 | 2123 | 2010 |
| Iron-based layered superconductor: LaOFeP Y Kamihara, H Hiramatsu, M Hirano, R Kawamura, H Yanagi, T Kamiya, ... Journal of the American Chemical Society 128 (31), 10012-10013, 2006 | 1953 | 2006 |
| Superconductivity at 43 K in an iron-based layered compound LaO1-xFxFeAs H Takahashi, K Igawa, K Arii, Y Kamihara, M Hirano, H Hosono nature 453 (7193), 376-378, 2008 | 1636 | 2008 |
| Amorphous oxide semiconductors for high-performance flexible thin-film transistors K Nomura, A Takagi, T Kamiya, H Ohta, M Hirano, H Hosono Japanese journal of applied physics 45 (5S), 4303, 2006 | 1497 | 2006 |
| High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering H Yabuta, M Sano, K Abe, T Aiba, T Den, H Kumomi, K Nomura, T Kamiya, ... Applied physics letters 89 (11), 2006 | 1424 | 2006 |
| Ammonia synthesis using a stable electride as an electron donor and reversible hydrogen store M Kitano, Y Inoue, Y Yamazaki, F Hayashi, S Kanbara, S Matsuishi, ... Nature chemistry 4 (11), 934-940, 2012 | 1198 | 2012 |
| Giant thermoelectric Seebeck coefficient of a two-dimensional electron gas in SrTiO3 H Ohta, SW Kim, Y Mune, T Mizoguchi, K Nomura, S Ohta, T Nomura, ... Nature materials 6 (2), 129-134, 2007 | 1141 | 2007 |
| Transparent conducting oxides for photovoltaics E Fortunato, D Ginley, H Hosono, DC Paine MRS bulletin 32 (3), 242-247, 2007 | 1127 | 2007 |
| Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application H Hosono Journal of non-crystalline solids 352 (9-20), 851-858, 2006 | 1081 | 2006 |
| Deep-ultraviolet transparent conductive thin films M Orita, H Ohta, M Hirano, H Hosono Applied Physics Letters 77 (25), 4166-4168, 2000 | 1043 | 2000 |
| Material characteristics and applications of transparent amorphous oxide semiconductors T Kamiya, H Hosono NPG Asia Materials 2 (1), 15-22, 2010 | 1040 | 2010 |
| Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3 (ZnO) 5 films K Nomura, T Kamiya, H Ohta, K Ueda, M Hirano, H Hosono Applied Physics Letters 85 (11), 1993-1995, 2004 | 969 | 2004 |
| Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator M Sano, K Nakagawa, H Hosono, T Kamiya, K Nomura US Patent 7,601,984, 2009 | 929 | 2009 |
| Origins of high mobility and low operation voltage of amorphous oxide TFTs: Electronic structure, electron transport, defects and doping T Kamiya, K Nomura, H Hosono Journal of display Technology 5 (7), 273-288, 2009 | 916 | 2009 |
| Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples H Hosono, N Kikuchi, N Ueda, H Kawazoe Journal of Non-Crystalline Solids 198, 165-169, 1996 | 907 | 1996 |
Toshio KamiyaTokyo Institute of TechnologyVerified email at msl.titech.ac.jp
