Henryk Teisseyre
Henryk Teisseyre
Institute of Physics of the Polish Academy of Sciences
Email verificata su ifpan.edu.pl
Citata da
Citata da
Lattice parameters of gallium nitride
M Leszczynski, H Teisseyre, T Suski, I Grzegory, M Bockowski, J Jun, ...
Applied Physics Letters 69 (1), 73-75, 1996
Towards the identification of the dominant donor in GaN
P Perlin, T Suski, H Teisseyre, M Leszczynski, I Grzegory, J Jun, ...
Physical review letters 75 (2), 296, 1995
Thermal expansion of gallium nitride
M Leszczynski, T Suski, H Teisseyre, P Perlin, I Grzegory, J Jun, ...
Journal of applied physics 76 (8), 4909-4911, 1994
Mechanism of yellow luminescence in GaN
T Suski, P Perlin, H Teisseyre, M Leszczyński, I Grzegory, J Jun, ...
Applied physics letters 67 (15), 2188-2190, 1995
Pressure studies of gallium nitride: Crystal growth and fundamental electronic properties
P Perlin, I Gorczyca, NE Christensen, I Grzegory, H Teisseyre, T Suski
Physical Review B 45 (23), 13307, 1992
Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer
H Teisseyre, P Perlin, T Suski, I Grzegory, S Porowski, J Jun, A Pietraszko, ...
Journal of applied physics 76 (4), 2429-2434, 1994
Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN
F Tuomisto, K Saarinen, B Lucznik, I Grzegory, H Teisseyre, T Suski, ...
Applied Physics Letters 86 (3), 031915, 2005
Lattice constants, thermal expansion and compressibility of gallium nitride
M Leszczynski, T Suski, P Perlin, H Teisseyre, I Grzegory, M Bockowski, ...
Journal of Physics D: Applied Physics 28 (4A), A149, 1995
Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells
SP Łepkowski, H Teisseyre, T Suski, P Perlin, N Grandjean, J Massies
Applied Physics Letters 79 (10), 1483-1485, 2001
The microstructure of gallium nitride monocrystals grown at high pressure
M Leszczynski, I Grzegory, H Teisseyre, T Suski, M Bockowski, J Jun, ...
Journal of crystal growth 169 (2), 235-242, 1996
High quality homoepitaxial GaN grown by molecular beam epitaxy with NH 3 on surface cracking
M Mayer, A Pelzmann, M Kamp, KJ Ebeling, H Teisseyre, G Nowak, ...
Japanese journal of applied physics 36 (12B), L1634, 1997
High resistivity GaN single crystalline substrates
S Porowski, M Boćkowski, B Łucznik, I Grzegory, M Wroblewski, ...
Acta Physica Polonica A 5 (92), 958-962, 1997
Free and bound excitons in homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar direction
H Teisseyre, C Skierbiszewski, B Łucznik, G Kamler, A Feduniewicz, ...
Applied Physics Letters 86 (16), 162112, 2005
Different character of the donor-acceptor pair-related 3.27 eV band and blue photoluminescence in Mg-doped GaN. Hydrostatic pressure studies
H Teisseyre, T Suski, P Perlin, I Grzegory, M Leszczynski, M Bockowski, ...
Physical Review B 62 (15), 10151, 2000
High pressure fabrication and processing of GaN: Mg
T Suski, J Jun, M Leszczynski, H Teisseyre, I Grzegory, S Porowski, ...
Materials Science and Engineering: B 59 (1-3), 1-5, 1999
Complete in-plane polarization anisotropy of the exciton in unstrained -plane GaN films
P Misra, O Brandt, HT Grahn, H Teisseyre, M Siekacz, C Skierbiszewski, ...
Applied Physics Letters 91 (14), 141903, 2007
Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
H Teisseyre, G Nowak, M Leszczynski, I Grzegory, M Bockowski, ...
Materials Research Society Internet Journal of Nitride Semiconductor Research 1, 1996
GaN Crystals: Growth and Doping Under Pressure
I Grzegory, M Bockowski, B Lucznik, M Wroblewski, S Krukowski, ...
Efficient radiative recombination and potential profile fluctuations in low-dislocation multiple quantum wells on bulk GaN substrates
G Franssen, S Grzanka, R Czernecki, T Suski, L Marona, T Riemann, ...
Journal of applied physics 97 (10), 103507, 2005
Amphoteric Be in GaN: Experimental evidence for switching between substitutional and interstitial lattice sites
F Tuomisto, V Prozheeva, I Makkonen, TH Myers, M Bockowski, ...
Physical review letters 119 (19), 196404, 2017
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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