Joachim Knoch
Joachim Knoch
Professor of Electrical Engineering, RWTH Aachen University
Email verificata su iht.rwth-aachen.de
Titolo
Citata da
Citata da
Anno
Band-to-band tunneling in carbon nanotube field-effect transistors
J Appenzeller, YM Lin, J Knoch, P Avouris
Physical review letters 93 (19), 196805, 2004
8752004
The role of metal− nanotube contact in the performance of carbon nanotube field-effect transistors
Z Chen, J Appenzeller, J Knoch, Y Lin, P Avouris
Nano letters 5 (7), 1497-1502, 2005
7492005
Field-modulated carrier transport in carbon nanotube transistors
J Appenzeller, J Knoch, V Derycke, R Martel, S Wind, P Avouris
Physical Review Letters 89 (12), 126801, 2002
5732002
High-performance carbon nanotube field-effect transistor with tunable polarities
YM Lin, J Appenzeller, J Knoch, P Avouris
IEEE transactions on nanotechnology 4 (5), 481-489, 2005
5122005
Toward nanowire electronics
J Appenzeller, J Knoch, MT Bjork, H Riel, H Schmid, W Riess
IEEE Transactions on electron devices 55 (11), 2827-2845, 2008
3672008
Comparing carbon nanotube transistors-the ideal choice: a novel tunneling device design
J Appenzeller, YM Lin, J Knoch, Z Chen, P Avouris
IEEE Transactions on Electron Devices 52 (12), 2568-2576, 2005
3562005
Donor deactivation in silicon nanostructures
MT Bjrk, H Schmid, J Knoch, H Riel, W Riess
Nature nanotechnology 4 (2), 103, 2009
3232009
Tunneling versus thermionic emission in one-dimensional semiconductors
J Appenzeller, M Radosavljević, J Knoch, P Avouris
Physical review letters 92 (4), 048301, 2004
3032004
Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices
J Knoch, S Mantl, J Appenzeller
Solid-State Electronics 51 (4), 572-578, 2007
2692007
Modeling of high-performance p-type III–V heterojunction tunnel FETs
J Knoch, J Appenzeller
IEEE Electron Device Letters 31 (4), 305-307, 2010
2152010
Tunneling phenomena in carbon nanotube field‐effect transistors
J Knoch, J Appenzeller
physica status solidi (a) 205 (4), 679-694, 2008
2042008
Silicon nanowire tunneling field-effect transistors
MT Bjrk, J Knoch, H Schmid, H Riel, W Riess
Applied Physics Letters 92 (19), 193504, 2008
2032008
Carbon nanotube electronics
J Appenzeller, J Knoch, R Martel, V Derycke, SJ Wind, P Avouris
IEEE transactions on nanotechnology 1 (4), 184-189, 2002
1992002
High performance of potassium -doped carbon nanotube field-effect transistors
M Radosavljević, J Appenzeller, P Avouris, J Knoch
Applied Physics Letters 84 (18), 3693-3695, 2004
1562004
Schottky barrier height modulation using dopant segregation in Schottky-barrier SOI-MOSFETs
M Zhang, J Knoch, QT Zhao, U Breuer, S Mantl
Proceedings of 35th European Solid-State Device Research Conference, 2005…, 2005
1542005
Low-frequency current fluctuations in individual semiconducting single-wall carbon nanotubes
YM Lin, J Appenzeller, J Knoch, Z Chen, P Avouris
Nano letters 6 (5), 930-936, 2006
1532006
Multimode transport in Schottky-barrier carbon-nanotube field-effect transistors
J Appenzeller, J Knoch, M Radosavljević, P Avouris
Physical Review Letters 92 (22), 226802, 2004
1282004
Impact of the channel thickness on the performance of Schottky barrier metal–oxide–semiconductor field-effect transistors
J Knoch, J Appenzeller
Applied Physics Letters 81 (16), 3082-3084, 2002
1222002
Patterned epitaxial vapor-liquid-solid growth of silicon nanowires on Si (111) using silane
H Schmid, MT Bjrk, J Knoch, H Riel, W Riess, P Rice, T Topuria
Journal of Applied Physics 103 (2), 024304, 2008
1202008
Doping limits of grown in situ doped silicon nanowires using phosphine
H Schmid, MT Björk, J Knoch, S Karg, H Riel, W Riess
Nano letters 9 (1), 173-177, 2009
1082009
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
Articoli 1–20