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Jongwon Yun
Jongwon Yun
Staff Engineer, Samsung Electronics, Korea
Email verificata su samsung.com - Home page
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Citata da
Citata da
Anno
300 GHz Integrated Heterodyne Receiver and Transmitter with On-Chip Fundamental Local Oscillator and Mixers
S Kim, J Yun, D Yoon, M Kim, JS Rieh, M Urteaga, S Jeon
Terahertz Science and Technology, IEEE Transactions on 5 (1), 92-101, 2015
742015
300-GHz InP HBT Oscillators Based on Common-Base Cross-Coupled Topology
J Yun, D Yoon, H Kim, JS Rieh
Microwave Theory and Techniques, IEEE Transactions on 62 (12), 3053-3064, 2014
652014
300-GHz direct and heterodyne active imagers based on 0.13-μm SiGe HBT technology
D Yoon, J Kim, J Yun, M Kaynak, B Tillack, JS Rieh
IEEE Transactions on Terahertz Science and Technology 7 (5), 536-545, 2017
502017
220–360-GHz broadband frequency multiplier chains (x8) in 130-nm BiCMOS technology
A Ali, J Yun, M Kucharski, HJ Ng, D Kissinger, P Colantonio
IEEE Transactions on Microwave Theory and Techniques 68 (7), 2701-2715, 2020
422020
Terahertz reflection-mode biological imaging based on InP HBT source and detector
J Yun, SJ Oh, K Song, D Yoon, HY Son, Y Choi, YM Huh, JS Rieh
IEEE Transactions on Terahertz Science and Technology 7 (3), 274-283, 2017
372017
Two 320 GHz signal sources based on SiGe HBT technology
J Yun, D Yoon, S Jung, M Kaynak, B Tillack, JS Rieh
IEEE Microwave and Wireless Components Letters 25 (3), 178-180, 2015
292015
168-195 GHz power amplifier with output power larger than 18 dBm in BiCMOS technology
A Ali, J Yun, F Giannini, HJ Ng, D Kissinger, P Colantonio
IEEE access 8, 79299-79309, 2020
272020
A 310–340-GHz Coupled-Line Voltage-Controlled Oscillator Based on 0.25-m InP HBT Technology
D Yoon, J Yun, JS Rieh
IEEE Transactions on Terahertz Science and Technology 5 (4), 652-654, 2015
252015
Terahertz signal source and receiver operating near 600 GHz and their 3-D imaging application
J Kim, D Yoon, H Son, D Kim, J Yoo, J Yun, HJ Ng, M Kaynak, JS Rieh
IEEE Transactions on Microwave Theory and Techniques 69 (5), 2762-2775, 2021
242021
Three-dimensional terahertz tomography with transistor-based signal source and detector circuits operating near 300 GHz
J Kim, D Yoon, J Yun, K Song, M Kaynak, B Tillack, JS Rieh
IEEE Transactions on Terahertz Science and Technology 8 (5), 482-491, 2018
232018
An Overview of Solid-State Electronic Sources and Detectors for Terahertz Imaging
JS Rieh, D Yoon, J Yun
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE …, 2014
232014
A 248–262 GHz InP HBT VCO with Interesting Tuning Behavior
J Yun, N Kim, D Yoon, H Kim, S Jeon, JS Rieh
Microwave and Wireless Components Letters, IEEE 24 (8), 560-562, 2014
222014
A 280-GHz 10-dBm signal source based on InP HBT technology
J Yun, J Kim, JS Rieh
IEEE Microwave and Wireless Components Letters 27 (2), 159-161, 2017
212017
High performance asymmetric coupled line balun at sub-thz frequency
A Ali, J Yun, H Jalli Ng, D Kissinger, F Giannini, P Colantonio
Applied Sciences 9 (9), 1907, 2019
192019
Sub-THz on-chip dielectric resonator antenna with wideband performance
A Ali, J Yun, HJ Ng, D Kissinger, F Giannini, P Colantonio
2019 49th European Microwave Conference (EuMC), 912-915, 2019
172019
240-GHz four-channel power-tuning heterodyne sensing readout system with reflection and transmission measurements in a 130-nm SiGe BiCMOS technology
D Wang, MH Eissa, K Schmalz, J Yun, A Malignaggi, J Borngräber, ...
IEEE Transactions on Microwave Theory and Techniques 67 (12), 5296-5306, 2019
132019
645‐GHz InP heterojunction bipolar transistor harmonic oscillator
J Yun, J Kim, D Yoon, JS Rieh
Electronics Letters 53 (22), 1475-1477, 2017
122017
Two 122-GHz phase-locked loops in 65-nm CMOS technology
N Kim, K Song, J Yun, J Yoo, JS Rieh
IEEE Transactions on Microwave Theory and Techniques 64 (8), 2623-2630, 2016
112016
3-D THz tomography with an InP HBT signal source and a SiGe HBT imaging receiver operating near 300 GHz
D Yoon, J Yun, J Kim, K Song, M Kaynak, B Tillack, JS Rieh
2015 40th International Conference on Infrared, Millimeter, and Terahertz …, 2015
102015
A 120 GHz voltage controlled oscillator integrated with 1/128 frequency divider chain in 65 nm CMOS technology
N Kim, J Yun, JS Rieh
JSTS: Journal of Semiconductor Technology and Science 14 (1), 131-137, 2014
102014
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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