Coexistence of grain‐boundaries‐assisted bipolar and threshold resistive switching in multilayer hexagonal boron nitride C Pan, Y Ji, N Xiao, F Hui, K Tang, Y Guo, X Xie, FM Puglisi, L Larcher, ...
Advanced functional materials 27 (10), 1604811, 2017
300 2017 Resistive Random Access Memory Cells with a Bilayer TiO2 /SiOX N Xiao, MA Villena, B Yuan, S Chen, B Wang, M Eliáš, Y Shi, F Hui, X Jing, ...
Advanced Functional Materials 27 (33), 1700384, 2017
85 2017 2D h-BN based RRAM devices FM Puglisi, L Larcher, C Pan, N Xiao, Y Shi, F Hui, M Lanza
2016 IEEE International Electron Devices Meeting (IEDM), 34.8. 1-34.8. 4, 2016
65 2016 Model for multi-filamentary conduction in graphene/hexagonal-boron-nitride/graphene based resistive switching devices C Pan, E Miranda, MA Villena, N Xiao, X Jing, X Xie, T Wu, F Hui, Y Shi, ...
2D Materials 4 (2), 025099, 2017
64 2017 Chemical solution deposition of epitaxial indium-and aluminum-doped Ga2O3 thin films on sapphire with tunable bandgaps X Tang, KH Li, CH Liao, JMT Vasquez, C Wang, N Xiao, X Li
Journal of the European Ceramic Society 42 (1), 175-180, 2022
26 2022 High-resolution characterization of hexagonal boron nitride coatings exposed to aqueous and air oxidative environments L Jiang, N Xiao, B Wang, E Grustan-Gutierrez, X Jing, P Babor, M Kolíbal, ...
Nano Research 10, 2046-2055, 2017
25 2017 Ultrasensitive Flexible κ-Phase Ga2 O3 Solar-Blind Photodetector Y Lu, S Krishna, X Tang, W Babatain, M Ben Hassine, CH Liao, N Xiao, ...
ACS Applied Materials & Interfaces 14 (30), 34844-34854, 2022
19 2022 Flexible self-powered DUV photodetectors with high responsivity utilizing Ga2O3/NiO heterostructure on buffered Hastelloy substrates X Tang, Y Lu, R Lin, CH Liao, Y Zhao, KH Li, N Xiao, H Cao, W Babatain, ...
Applied Physics Letters 122 (12), 2023
18 2023 Epitaxial growth of β-Ga 2 O 3 (− 201) thin film on four-fold symmetry CeO 2 (001) substrate for heterogeneous integrations X Tang, KH Li, CH Liao, D Zheng, C Liu, R Lin, N Xiao, S Krishna, ...
Journal of Materials Chemistry C 9 (44), 15868-15876, 2021
12 2021 Experimental observation and mitigation of dielectric screening in hexagonal boron nitride based resistive switching devices B Wang, N Xiao, C Pan, Y Shi, F Hui, X Jing, K Zhu, B Guo, MA Villena, ...
Crystal Research and Technology 53 (4), 1800006, 2018
12 2018 Effect of the AlN strain compensation layer on InGaN quantum well red-light-emitting diodes beyond epitaxy Z Liu, M Nong, Y Lu, H Cao, S Yuvaraja, N Xiao, Z Alnakhli, RRA Vázquez, ...
Optics Letters 47 (23), 6229-6232, 2022
11 2022 Transferable Ga2 O3 Membrane for Vertical and Flexible Electronics via One-Step Exfoliation Y Lu, S Krishna, CH Liao, Z Yang, M Kumar, Z Liu, X Tang, N Xiao, ...
ACS Applied Materials & Interfaces 14 (42), 47922-47930, 2022
11 2022 Equivalent circuit model for the electron transport in 2D resistive switching material systems E Miranda, J Suñé, C Pan, M Villena, N Xiao, M Lanza
2017 47th European Solid-State Device Research Conference (ESSDERC), 86-89, 2017
7 2017 D Chettri, G Mainali, C Amruth, V Khandelwal, S Yuvaraja, N Xiao, X Tang, ...
IEEE Transactions on Electron Devices, 2023
4 2023 The influence of annealing atmosphere on sputtered indium oxide thin-film transistors N Xiao, S Yuvaraja, D Chettri, Z Liu, Y Lu, C Liao, X Tang, X Li
Journal of Physics D: Applied Physics 56 (42), 425102, 2023
1 2023 Correction: Epitaxial growth of β-Ga 2 O 3 (− 201) thin film on four-fold symmetry CeO 2 (001) substrate for heterogeneous integrations X Tang, KH Li, CH Liao, D Zheng, C Liu, R Lin, N Xiao, S Krishna, ...
Journal of Materials Chemistry C 9 (48), 17542-17542, 2021
1 2021 Monolithic n‐Type Metal–Oxide–Semiconductor Inverter Integrated Circuits Based on Wide and Ultrawide Bandgap Semiconductors D Chettri, G Mainali, N Xiao, X Tang, X Li
physica status solidi (b), 2300493, 2024
2024 Integration of low-thermal-budget In2O3 NMOS inverter and GaN HEMT for power electronics M Kumar, S Yuvaraja, N Xiao, MK Rajbhar, G Mainali, V Khandelwal, ...
Applied Physics Letters 124 (11), 2024
2024 Multi-wavelength and broadband AlGaN-based LED for versatile and artificial UV light source Z Liu, Y Lu, H Cao, RA Vazquez, R Lin, N Xiao, X Tang, M Nong, S Li, ...
Micro and Nanostructures 187, 207755, 2024
2024 Chemical Solution Deposition of (GaAl) 2O3 Single Layer with High Thickness and Silver-Enhanced Crystal Quality X Tang, WA AlQanbar, MB Hassine, N Xiao, Y Lu, C Wang, V Khandelwal, ...
CrystEngComm, 2024
2024 