|Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges|
JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
|Enhancement and depletion mode AlGaN/GaN CAVET with Mg-ion-implanted GaN as current blocking layer|
S Chowdhury, BL Swenson, UK Mishra
IEEE Electron Device Letters 29 (6), 543-545, 2008
|Lateral and vertical transistors using the AlGaN/GaN heterostructure|
S Chowdhury, UK Mishra
IEEE Transactions on Electron Devices 60 (10), 3060-3066, 2013
|CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion|
S Chowdhury, MH Wong, BL Swenson, UK Mishra
IEEE Electron Device Letters 33 (1), 41-43, 2011
|Current status and scope of gallium nitride-based vertical transistors for high-power electronics application|
S Chowdhury, BL Swenson, MH Wong, UK Mishra
Semiconductor Science and Technology 28 (7), 074014, 2013
|Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures|
M Higashiwaki, S Chowdhury, BL Swenson, UK Mishra
Applied Physics Letters 97 (22), 222104, 2010
|High power semiconductor electronic components with increased reliability|
RK Lal, R Coffie, Y Wu, P Parikh, Y Dora, U Mishra, S Chowdhury, ...
US Patent 8,598,937, 2013
|Distribution of donor states on etched surface of AlGaN/GaN heterostructures|
M Higashiwaki, S Chowdhury, MS Miao, BL Swenson, CG Van de Walle, ...
Journal of Applied Physics 108 (6), 063719, 2010
|Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction|
R Yeluri, J Lu, CA Hurni, DA Browne, S Chowdhury, S Keller, JS Speck, ...
Applied Physics Letters 106 (18), 183502, 2015
|Distributed surface donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions|
L Gordon, MS Miao, S Chowdhury, M Higashiwaki, UK Mishra, ...
Journal of Physics D: Applied Physics 43 (50), 505501, 2010
|Design of 1.2 kV Power Switches With LowUsing GaN-Based Vertical JFET|
D Ji, S Chowdhury
IEEE Transactions on Electron Devices 62 (8), 2571-2578, 2015
|Semiconductor devices with guard rings|
U Mishra, S Chowdhury, Y Dora
US Patent 8,901,604, 2014
|Transistors with isolation regions|
U Mishra, S Chowdhury
US Patent 8,742,460, 2014
|Normally OFF trench CAVET with active Mg-doped GaN as current blocking layer|
D Ji, MA Laurent, A Agarwal, W Li, S Mandal, S Keller, S Chowdhury
IEEE Transactions on Electron Devices 64 (3), 805-808, 2016
|Semiconductor electronic components with integrated current limiters|
Y Wu, U Mishra, S Chowdhury
US Patent 8,803,246, 2014
|880 V/MIS Gate Trench CAVET on Bulk GaN Substrates|
D Ji, A Agarwal, H Li, W Li, S Keller, S Chowdhury
IEEE Electron Device Letters 39 (6), 863-865, 2018
|Demonstrating> 1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices|
D Ji, C Gupta, SH Chan, A Agarwal, W Li, S Keller, UK Mishra, ...
2017 IEEE International Electron Devices Meeting (IEDM), 9.4. 1-9.4. 4, 2017
|Analysis of the reverse IV characteristics of diamond-based PIN diodes|
M Saremi, R Hathwar, M Dutta, FAM Koeck, RJ Nemanich, S Chowdhury, ...
Applied Physics Letters 111 (4), 043507, 2017
|Dispersion free 450-V p GaN-gated CAVETs with Mg-ion implanted blocking layer|
S Mandal, A Agarwal, E Ahmadi, KM Bhat, D Ji, MA Laurent, S Keller, ...
IEEE Electron Device Letters 38 (7), 933-936, 2017
|Design and fabrication of a 1.2 kV GaN‐based MOS vertical transistor for single chip normally off operation|
W Li, S Chowdhury
physica status solidi (a) 213 (10), 2714-2720, 2016