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K.S. Boutros
K.S. Boutros
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Email verificata su hrl.com
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Citata da
Anno
1200-V normally off GaN-on-Si field-effect transistors with low dynamic on-resistance
R Chu, A Corrion, M Chen, R Li, D Wong, D Zehnder, B Hughes, ...
IEEE Electron Device Letters 32 (5), 632-634, 2011
4422011
Solar module array with reconfigurable tile
RA Sherif, KS Boutros
US Patent 6,350,944, 2002
2522002
Integrated semiconductor circuits on photo-active Germanium substrates
KS Boutros, NH Karam, DD Krut, M Haddad
US Patent 7,151,307, 2006
2212006
Schottky barrier engineering in III–V nitrides via the piezoelectric effect
ET Yu, XZ Dang, LS Yu, D Qiao, PM Asbeck, SS Lau, GJ Sullivan, ...
Applied physics letters 73 (13), 1880-1882, 1998
2041998
Effect of hydrogen on the indium incorporation in InGaN epitaxial films
EL Piner, MK Behbehani, NA El-Masry, FG McIntosh, JC Roberts, ...
Applied physics letters 70 (4), 461-463, 1997
1881997
Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition
T Hashizume, E Alekseev, D Pavlidis, KS Boutros, J Redwing
Journal of Applied Physics 88 (4), 1983-1986, 2000
1552000
Ni and Ti Schottky barriers on grown on SiC substrates
LS Yu, DJ Qiao, QJ Xing, SS Lau, KS Boutros, JM Redwing
Applied Physics Letters 73 (2), 238-240, 1998
1471998
Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor
XZ Dang, PM Asbeck, ET Yu, GJ Sullivan, MY Chen, BT McDermott, ...
Applied physics letters 74 (25), 3890-3892, 1999
1381999
Growth and characterization of AlInGaN quaternary alloys
FG McIntosh, KS Boutros, JC Roberts, SM Bedair, EL Piner, NA El‐Masry
Applied physics letters 68 (1), 40-42, 1996
1281996
Monolithic bypass-diode and solar-cell string assembly
K Boutros, D Krut, N Karam
US Patent App. 10/134,191, 2002
1232002
Persistent photoconductivity and defect levels in n-type AlGaN/GaN heterostructures
XZ Dang, CD Wang, ET Yu, KS Boutros, JM Redwing
Applied physics letters 72 (21), 2745-2747, 1998
1171998
Gate‐recessed normally‐off GaN‐on‐ Si HEMT using a new O2‐BCl3 digital etching technique
SD Burnham, K Boutros, P Hashimoto, C Butler, DWS Wong, M Hu, ...
physica status solidi c 7 (7‐8), 2010-2012, 2010
1142010
An Al/sub 0.3/Ga/sub 0.7/N/GaN undoped channel heterostructure field effect transistor with Fmax of 107 GHz
R Li, SJ Cai, L Wong, Y Chen, KL Wang, RP Smith, SC Martin, KS Boutros, ...
IEEE Electron Device Letters 20 (7), 323-325, 1999
801999
Growth and characterization of In-based nitride compounds
SM Bedair, FG McIntosh, JC Roberts, EL Piner, KS Boutros, NA El-Masry
Journal of crystal growth 178 (1-2), 32-44, 1997
801997
GaN HFET switching characteristics at 350V/20A and synchronous boost converter performance at 1MHz
B Hughes, J Lazar, S Hulsey, D Zehnder, D Matic, K Boutros
2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and …, 2012
792012
AlGaN/GaN -Band 5-W MMIC Amplifier
AM Darwish, K Boutros, B Luo, BD Huebschman, E Viveiros, HA Hung
IEEE Transactions on Microwave Theory and Techniques 54 (12), 4456-4463, 2006
712006
Facet roughness analysis for InGaN/GaN lasers with cleaved facets
DA Stocker, EF Schubert, W Grieshaber, KS Boutros, JM Redwing
Applied Physics Letters 73 (14), 1925-1927, 1998
711998
GaN power electronics for automotive application
KS Boutros, R Chu, B Hughes
2012 IEEE Energytech, 1-4, 2012
672012
High quality InGaN films by atomic layer epitaxy
KS Boutros, FG McIntosh, JC Roberts, SM Bedair, EL Piner, NA El‐Masry
Applied physics letters 67 (13), 1856-1858, 1995
67*1995
Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure
LS Yu, QJ Xing, D Qiao, SS Lau, KS Boutros, JM Redwing
Applied physics letters 73 (26), 3917-3919, 1998
661998
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