K.S. Boutros
K.S. Boutros
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Email verificata su hrl.com
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Anno
1200-V normally off GaN-on-Si field-effect transistors with low dynamic on-resistance
R Chu, A Corrion, M Chen, R Li, D Wong, D Zehnder, B Hughes, ...
IEEE Electron Device Letters 32 (5), 632-634, 2011
3392011
Solar module array with reconfigurable tile
RA Sherif, KS Boutros
US Patent 6,350,944, 2002
1722002
Schottky barrier engineering in III–V nitrides via the piezoelectric effect
ET Yu, XZ Dang, LS Yu, D Qiao, PM Asbeck, SS Lau, GJ Sullivan, ...
Applied physics letters 73 (13), 1880-1882, 1998
1661998
Effect of hydrogen on the indium incorporation in InGaN epitaxial films
EL Piner, MK Behbehani, NA El-Masry, FG McIntosh, JC Roberts, ...
Applied physics letters 70 (4), 461-463, 1997
1651997
Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition
T Hashizume, E Alekseev, D Pavlidis, KS Boutros, J Redwing
Journal of Applied Physics 88 (4), 1983-1986, 2000
1352000
RF MEMS-tuned slot antenna and a method of making same
DF Sievenpiper
US Patent 6,864,848, 2005
1282005
Ni and Ti Schottky barriers on grown on SiC substrates
LS Yu, DJ Qiao, QJ Xing, SS Lau, KS Boutros, JM Redwing
Applied Physics Letters 73 (2), 238-240, 1998
1231998
Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor
XZ Dang, PM Asbeck, ET Yu, GJ Sullivan, MY Chen, BT McDermott, ...
Applied physics letters 74 (25), 3890-3892, 1999
1211999
Growth and characterization of AlInGaN quaternary alloys
FG McIntosh, KS Boutros, JC Roberts, SM Bedair, EL Piner, NA El‐Masry
Applied physics letters 68 (1), 40-42, 1996
1211996
Monolithic bypass-diode and solar-cell string assembly
KS Boutros, DD Krut, NH Karam
US Patent 6,635,507, 2003
1082003
Integrated semiconductor circuits on photo-active Germanium substrates
KS Boutros, NH Karam, DD Krut, M Haddad
US Patent 7,151,307, 2006
1042006
Persistent photoconductivity and defect levels in n-type AlGaN/GaN heterostructures
XZ Dang, CD Wang, ET Yu, KS Boutros, JM Redwing
Applied physics letters 72 (21), 2745-2747, 1998
951998
An Al/sub 0.3/Ga/sub 0.7/N/GaN undoped channel heterostructure field effect transistor with Fmax of 107 GHz
R Li, SJ Cai, L Wong, Y Chen, KL Wang, RP Smith, SC Martin, KS Boutros, ...
IEEE Electron Device Letters 20 (7), 323-325, 1999
781999
Gate‐recessed normally‐off GaN‐on‐ Si HEMT using a new O2‐BCl3 digital etching technique
SD Burnham, K Boutros, P Hashimoto, C Butler, DWS Wong, M Hu, ...
physica status solidi c 7 (7‐8), 2010-2012, 2010
762010
Growth and characterization of In-based nitride compounds
SM Bedair, FG McIntosh, JC Roberts, EL Piner, KS Boutros, NA El-Masry
Journal of crystal growth 178 (1-2), 32-44, 1997
701997
GaN HFET switching characteristics at 350V/20A and synchronous boost converter performance at 1MHz
B Hughes, J Lazar, S Hulsey, D Zehnder, D Matic, K Boutros
2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and…, 2012
682012
AlGaN/GaN-Band 5-W MMIC Amplifier
AM Darwish, K Boutros, B Luo, BD Huebschman, E Viveiros, HA Hung
IEEE transactions on microwave theory and techniques 54 (12), 4456-4463, 2006
662006
Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure
LS Yu, QJ Xing, D Qiao, SS Lau, KS Boutros, JM Redwing
Applied physics letters 73 (26), 3917-3919, 1998
631998
Normally-off 5A/1100V GaN-on-silicon device for high voltage applications
KS Boutros, S Burnham, D Wong, K Shinohara, B Hughes, D Zehnder, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-3, 2009
572009
High quality InGaN films by atomic layer epitaxy
KS Boutros, FG McIntosh, JC Roberts, SM Bedair, EL Piner, NA El‐Masry
Applied physics letters 67 (13), 1856-1858, 1995
561995
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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