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Ugo Russo
Ugo Russo
Email verificata su micron.com
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Self-accelerated thermal dissolution model for reset programming in unipolar resistive-switching memory (RRAM) devices
U Russo, D Ielmini, C Cagli, AL Lacaita
IEEE Transactions on Electron Devices 56 (2), 193-200, 2009
5192009
Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices
U Russo, D Ielmini, C Cagli, AL Lacaita
IEEE Transactions on Electron Devices 56 (2), 186-192, 2009
4282009
Study of multilevel programming in programmable metallization cell (PMC) memory
U Russo, D Kamalanathan, D Ielmini, AL Lacaita, MN Kozicki
IEEE transactions on electron devices 56 (5), 1040-1047, 2009
3772009
Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM
U Russo, D Ielmini, C Cagli, AL Lacaita, S Spiga, C Wiemer, M Perego, ...
2007 IEEE International Electron Devices Meeting, 775-778, 2007
2592007
Modeling of programming and read performance in phase-change memories—Part I: Cell optimization and scaling
U Russo, D Ielmini, A Redaelli, AL Lacaita
IEEE Transactions on Electron Devices 55 (2), 506-514, 2008
1472008
Intrinsic data retention in nanoscaled phase-change memories—Part I: Monte Carlo model for crystallization and percolation
U Russo, D Ielmini, A Redaelli, AL Lacaita
IEEE Transactions on Electron Devices 53 (12), 3032-3039, 2006
1042006
Analytical modeling of chalcogenide crystallization for PCM data-retention extrapolation
U Russo, D Ielmini, AL Lacaita
IEEE transactions on electron devices 54 (10), 2769-2777, 2007
972007
Voltage-driven on–off transition and tradeoff with program and erase current in programmable metallization cell (PMC) memory
D Kamalanathan, U Russo, D Ielmini, MN Kozicki
IEEE Electron Device Letters 30 (5), 553-555, 2009
812009
Intrinsic data retention in nanoscaled phase-change memories—Part II: Statistical analysis and prediction of failure time
A Redaelli, D Ielmini, U Russo, AL Lacaita
IEEE Transactions on Electron Devices 53 (12), 3040-3046, 2006
812006
Modeling of programming and read performance in phase-change memories—Part II: Program disturb and mixed-scaling approach
U Russo, D Ielmini, A Redaelli, AL Lacaita
IEEE Transactions on Electron Devices 55 (2), 515-522, 2008
642008
Impact of electrode materials on resistive-switching memory programming
U Russo, C Cagli, S Spiga, E Cianci, D Ielmini
IEEE Electron Device Letters 30 (8), 817-819, 2009
442009
Micron Semiconductor Italia srl R&D, Via C. Olivetti 2, 20864, Agrate Brianza, Italy
A Redaelli, M Boniardi, A Ghetti, U Russo, C Cupeta, S Lavizzari, ...
Electron Devices Meeting (IEDM), 2013 IEEE International, 30.4. 1-30.4. 4, 2013
30*2013
Memory cells and integrated devices
A Redaelli, U Russo, A Pirovano, S Lavizzari
US Patent 8,723,155, 2014
282014
Memory cells and integrated devices
A Redaelli, U Russo, A Pirovano, S Lavizzari
US Patent 8,723,155, 2014
272014
Void formation in charge trap structures
CM Carlson, U Russo
US Patent 10,453,855, 2019
262019
IEDM Tech. Dig.
U Russo, D Ielmini, C Cagli, AL Lacaita, S Spiga, C Wiemer, M Perego, ...
IEDM Tech. Dig, 775, 2007
192007
Experimental and simulation study of the program efficiency of HfO2 based charge trapping memories
S Spiga, G Congedo, U Russo, A Lamperti, O Salicio, F Driussi, ...
Solid-State Device Research Conference, Proceedings of the European, 408, 2010
152010
Memory cells having a plurality of resistance variable materials
U Russo, A Redaelli, F Pellizzer
US Patent 9,449,683, 2016
142016
Memory cells, integrated devices, and methods of forming memory cells
A Redaelli, U Russo, A Pirovano, S Lavizzari
US Patent 9,299,930, 2016
132016
Memory cells having a plurality of resistance variable materials
U Russo, A Redaelli, F Pellizzer
US Patent 9,449,683, 2016
122016
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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