| Chemical Vapor Sensing with Monolayer MoS2 FK Perkins, AL Friedman, E Cobas, PM Campbell, GG Jernigan, ... Nano letters 13 (2), 668-673, 2013 | 1241 | 2013 |
| A Group-IV Ferromagnetic Semiconductor: MnxGe1−x YD Park, AT Hanbicki, SC Erwin, CS Hellberg, JM Sullivan, JE Mattson, ... Science 295 (5555), 651-654, 2002 | 1073 | 2002 |
| Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor AT Hanbicki, BT Jonker, G Itskos, G Kioseoglou, A Petrou Applied Physics Letters 80 (7), 1240-1242, 2002 | 915 | 2002 |
| Robust electrical spin injection into a semiconductor heterostructure BT Jonker, YD Park, BR Bennett, HD Cheong, G Kioseoglou, A Petrou Physical Review B 62 (12), 8180, 2000 | 665 | 2000 |
| Electrical detection of charge-current-induced spin polarization due to spin-momentum locking in Bi2Se3 CH Li, OMJ van ‘t Erve, JT Robinson, Y Liu, L Li, BT Jonker Nature nanotechnology 9 (3), 218-224, 2014 | 503 | 2014 |
| Electrical spin-injection into silicon from a ferromagnetic metal/tunnel barrier contact BT Jonker, G Kioseoglou, AT Hanbicki, CH Li, PE Thompson Nature Physics 3 (8), 542-546, 2007 | 502 | 2007 |
| Properties of Fe single‐crystal films grown on (100) GaAs by molecular‐beam epitaxy JJ Krebs, BT Jonker, GA Prinz Journal of applied physics 61 (7), 2596-2599, 1987 | 479 | 1987 |
| Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier AT Hanbicki, OMJ Van’t Erve, R Magno, G Kioseoglou, CH Li, BT Jonker, ... Applied Physics Letters 82 (23), 4092-4094, 2003 | 463 | 2003 |
| Valley polarization and intervalley scattering in monolayer MoS2 G Kioseoglou, AT Hanbicki, M Currie, AL Friedman, D Gunlycke, ... Applied Physics Letters 101 (22), 2012 | 339 | 2012 |
| Exciton diamagnetic shifts and valley Zeeman effects in monolayer WS2 and MoS2 to 65 Tesla AV Stier, KM McCreary, BT Jonker, J Kono, SA Crooker Nature communications 7 (1), 10643, 2016 | 337 | 2016 |
| Electrical injection and detection of spin-polarized carriers in silicon in a lateral transport geometry OMJ Van’t Erve, AT Hanbicki, M Holub, CH Li, C Awo-Affouda, ... Applied Physics Letters 91 (21), 2007 | 332 | 2007 |
| Measurement of high exciton binding energy in the monolayer transition-metal dichalcogenides WS2 and WSe2 AT Hanbicki, M Currie, G Kioseoglou, AL Friedman, BT Jonker Solid State Communications 203, 16-20, 2015 | 328 | 2015 |
| Direct evidence for perpendicular spin orientations and enhanced hyperfine fields in ultrathin Fe (100) films on Ag (100) NC Koon, BT Jonker, FA Volkening, JJ Krebs, GA Prinz Physical review letters 59 (21), 2463, 1987 | 313 | 1987 |
| Spin-polarized photoemission study of epitaxial Fe (001) films on Ag (001) BT Jonker, KH Walker, E Kisker, GA Prinz, C Carbone Physical review letters 57 (1), 142, 1986 | 284 | 1986 |
| Influence of substrate surface reconstruction on the growth and magnetic properties of Fe on GaAs (001) EM Kneedler, BT Jonker, PM Thibado, RJ Wagner, BV Shanabrook, ... Physical Review B 56 (13), 8163, 1997 | 268 | 1997 |
| Magnetoresistance of Mn: Ge ferromagnetic nanoclusters in a diluted magnetic semiconductor matrix YD Park, A Wilson, AT Hanbicki, JE Mattson, T Ambrose, G Spanos, ... Applied Physics Letters 78 (18), 2739-2741, 2001 | 249 | 2001 |
| Graphene as a tunnel barrier: graphene-based magnetic tunnel junctions E Cobas, AL Friedman, OMJ van’t Erve, JT Robinson, BT Jonker Nano letters 12 (6), 3000-3004, 2012 | 247 | 2012 |
| Electrical injection and detection of spin accumulation in silicon at 500 K with magnetic metal/silicon dioxide contacts CH Li, OMJ Van't Erve, BT Jonker Nature Communications 2 (1), 245, 2011 | 237 | 2011 |
| Synthesis of Large-Area WS2 monolayers with Exceptional Photoluminescence KM McCreary, AT Hanbicki, GG Jernigan, JC Culbertson, BT Jonker Scientific reports 6 (1), 19159, 2016 | 215 | 2016 |
| Twist angle-dependent atomic reconstruction and moiré patterns in transition metal dichalcogenide heterostructures MR Rosenberger, HJ Chuang, M Phillips, VP Oleshko, KM McCreary, ... ACS nano 14 (4), 4550-4558, 2020 | 207 | 2020 |
