Жидкостная эпитаксия компенсированных слоев Арсенида Галлия и твердых растворов на его основе AS Saidov, MS Saidov, ÈA Koščanov, VM Tučkevič
Издательство" Фан" Узбекской ССР, 1986
38 1986 Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x AS Saidov, DV Saparov, SN Usmonov, A Kutlimratov, JM Abdiev, ...
Advances in Condensed Matter Physics 2021, 1-8, 2021
27 * 2021 The thermovoltaic effect in variband solid solution Si1–x Ge x (0 ≤ x ≤ 1) AS Saidov, AY Leyderman, AB Karshiev
Technical Physics Letters 42, 725-728, 2016
22 2016 About Possibility of Development Synergetic Processes in Semiconductors of Type A^ sup III^ B^ sup V^ A Leyderman, A Saidov, M Khashaev, U Rahmonov
Journal of Materials science research 2 (2), 14, 2013
22 2013 Growth, structure, and properties of GaAs-based (GaAs)1–x –y (Ge2 ) x (ZnSe) y epitaxial films SZ Zaynabidinov, AS Saidov, AY Leiderman, MU Kalanov, SN Usmonov, ...
Semiconductors 50, 59-65, 2016
18 2016 Growth of (InSb)1 − x (Sn2 ) x films on GaAs substrates by liquid-phase epitaxy AS Saidov, MS Saidov, SN Usmonov, UP Asatova
Semiconductors 44, 938-945, 2010
17 2010 INFLUENCE OF WEAK GRADED GAP ON INJECTION DIFFUSION REGIMES OF CURRENT TRANSPORT IN SEMICONDUCTOR PN-STRUCTURES A LEYDERMAN, AS Saidov, S USMONOV, JM Abdiyev, QT Suyarov
Congress Dates, 40, 2021
16 2021 Injection diffusion processes in the weak linear graded-band semiconductor pn-structures AY Leiderman, AS Saidov, JM Abdiyev
Euroasian Journal of Semiconductors Science and Engineering 3 (1), 3, 2021
16 2021 Thermovoltaic properties of technical silicon melted by solar radiation AS Saidov, AA Abakumov, MS Saidov, SN Usmonov, KT Kholikov
Applied Solar Energy 43, 266-267, 2007
16 2007 Structure and photoelectric properties of Si1 − x Sn x epilayers AS Saidov, SN Usmonov, M Kalanov, KM Madaminov
Technical physics letters 36, 827-829, 2010
14 2010 Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties AS Saidov, MS Saidov, SN Usmonov, AY Leiderman, MU Kalanov, ...
Physics of the Solid State 53, 2012-2021, 2011
13 2011 I–V characteristic of p-n structures based on a continuous solid solutions (Si2 )1 − xx (CdS) x AS Saidov, AY Leyderman, SN Usmonov, KT Kholikov
Semiconductors 43, 416-418, 2009
13 2009 Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs) 1− x (ZnSe) x with Nanocrystals AS Saidov, SN Usmonov, DV Saparov
Advances in Materials Science and Engineering 2019, 2019
11 2019 The thermoelectric effect in a graded-gap n Si–p Si1–x Ge x heterostructure AY Leiderman, AS Saidov, AB Karshiev
Applied Solar Energy 52, 115-117, 2016
11 2016 Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04) AS Saidov, SN Usmonov, MU Kalanov, AN Kurmantayev, AN Bahtybayev
Physics of the Solid State 55, 45-53, 2013
11 2013 Possibility of obtaining the (GaSb)1 − x (Si2 ) x films on silicon substrates by the method of liquid-phase epitaxy SN Usmonov, AS Saidov, AY Leyderman, D Saparov, KT Kholikov
Semiconductors 43, 1092-1097, 2009
11 2009 Spectral sensitivity of (Si2 )1 − x (CdS)x solid solutions AS Saidov, SN Usmonov, KT Kholikov, D Saparov
Technical Physics Letters 33, 853-855, 2007
10 2007 Synthesis and characterization of (Si2 )1−x −y (Ge2 ) x (GaAs) y continuous solid solutions AS Saidov, SN Usmonov, KT Kholikov, D Saparov
Technical Physics Letters 33, 701-703, 2007
10 2007 Influence of the varizonal Si1-xGex solid solution composition on the thermovoltaic effect in n–Si–p–Si (1-x) Gex structure AS Saidov, SN Usmonov, AB Karshiev, JM Abdiev
IOP Conference Series: Earth and Environmental Science 1112 (1), 012040, 2022
9 2022 Liquid-phase epitaxy of the (Si 2) 1− x− y (Ge 2) x (GaAs) y substitutional solid solution (0≤ x≤ 0.91, 0≤ y≤ 0.94) and their electrophysical properties AS Saidov, SN Usmonov, MS Saidov
Semiconductors 49, 547-550, 2015
9 2015 