A review of Ga2O3 materials, processing, and devices SJ Pearton, J Yang, PH Cary, F Ren, J Kim, MJ Tadjer, MA Mastro
Applied Physics Reviews 5 (1), 2018
2305 2018 2300V reverse breakdown voltage Ga2O3 Schottky rectifiers J Yang, F Ren, M Tadjer, SJ Pearton, A Kuramata
ECS Journal of Solid State Science and Technology 7 (5), Q92, 2018
220 2018 High Breakdown Voltage (−201) -Ga2O3 Schottky Rectifiers J Yang, S Ahn, F Ren, SJ Pearton, S Jang, A Kuramata
IEEE Electron Device Letters 38 (7), 906-909, 2017
203 2017 Radiation damage effects in Ga 2 O 3 materials and devices J Kim, SJ Pearton, C Fares, J Yang, F Ren, S Kim, AY Polyakov
Journal of Materials Chemistry C 7 (1), 10-24, 2019
201 2019 High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3 J Yang, S Ahn, F Ren, SJ Pearton, S Jang, J Kim, A Kuramata
Applied Physics Letters 110 (19), 2017
196 2017 Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage AY Polyakov, NB Smirnov, IV Shchemerov, EB Yakimov, J Yang, F Ren, ...
Applied Physics Letters 112 (3), 2018
119 2018 Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3 AY Polyakov, NB Smirnov, IV Shchemerov, EB Yakimov, SJ Pearton, ...
Applied Physics Letters 113 (9), 2018
94 2018 Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW. cm-2 figure-of-merit J Yang, F Ren, M Tadjer, SJ Pearton, A Kuramata
AIP Advances 8 (5), 2018
92 2018 Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length J Lee, E Flitsiyan, L Chernyak, J Yang, F Ren, SJ Pearton, B Meyler, ...
Applied Physics Letters 112 (8), 2018
79 2018 1.5 MeV electron irradiation damage in β-Ga2O3 vertical rectifiers J Yang, F Ren, SJ Pearton, G Yang, J Kim, A Kuramata
Journal of Vacuum Science & Technology B 35 (3), 2017
79 2017 Annealing of dry etch damage in metallized and bare (-201) Ga2O3 J Yang, F Ren, R Khanna, K Bevlin, D Geerpuram, LC Tung, J Lin, ...
Journal of Vacuum Science & Technology B 35 (5), 2017
74 2017 Effect of surface treatments on electrical properties of β-Ga2O3 J Yang, Z Sparks, F Ren, SJ Pearton, M Tadjer
Journal of Vacuum Science & Technology B 36 (6), 2018
72 2018 Vertical geometry 33.2 A, 4.8 MW cm2 Ga2O3 field-plated Schottky rectifier arrays J Yang, M Xian, P Carey, C Fares, J Partain, F Ren, M Tadjer, E Anber, ...
Applied Physics Letters 114 (23), 2019
69 2019 A comparative study of wet etching and contacts on (2¯ 01) and (010) oriented β-Ga2O3 S Jang, S Jung, K Beers, J Yang, F Ren, A Kuramata, SJ Pearton, KH Baik
Journal of Alloys and Compounds 731, 118-125, 2018
67 2018 Inductively coupled plasma etch damage in (-201) Ga2O3 Schottky diodes J Yang, S Ahn, F Ren, R Khanna, K Bevlin, D Geerpuram, SJ Pearton, ...
Applied Physics Letters 110 (14), 2017
67 2017 Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current EB Yakimov, AY Polyakov, NB Smirnov, IV Shchemerov, J Yang, F Ren, ...
Journal of Applied Physics 123 (18), 2018
65 2018 Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au PH Carey, J Yang, F Ren, DC Hays, SJ Pearton, S Jang, A Kuramata, ...
AIP Advances 7 (9), 2017
58 2017 Improvement of Ohmic contacts on Ga2O3 through use of ITO-interlayers PH Carey, J Yang, F Ren, DC Hays, SJ Pearton, A Kuramata, ...
Journal of Vacuum Science & Technology B 35 (6), 2017
56 2017 Vertical Geometry, 2-A Forward Current Ga2 O3 Schottky Rectifiers on Bulk Ga2 O3 Substrates J Yang, F Ren, SJ Pearton, A Kuramata
IEEE Transactions on Electron Devices 65 (7), 2790-2796, 2018
55 2018 Inductively coupled plasma etching of bulk, single-crystal Ga2O3 J Yang, S Ahn, F Ren, S Pearton, R Khanna, K Bevlin, D Geerpuram, ...
Journal of Vacuum Science & Technology B 35 (3), 2017
52 2017