Luciana Di Gaspare
Luciana Di Gaspare
Department of Sciences- Roma Tre University
Verified email at uniroma3.it
Title
Cited by
Cited by
Year
Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si
L Colace, G Masini, F Galluzzi, G Assanto, G Capellini, L Di Gaspare, ...
Applied Physics Letters 72 (24), 3175-3177, 1998
3051998
Ge–Si intermixing in Ge quantum dots on Si (001) and Si (111)
F Boscherini, G Capellini, L Di Gaspare, F Rosei, N Motta, S Mobilio
Applied Physics Letters 76 (6), 682-684, 2000
1482000
Atomic force microscopy study of self-organized Ge islands grown on Si (100) by low pressure chemical vapor deposition
G Capellini, L Di Gaspare, F Evangelisti, E Palange
Applied physics letters 70 (4), 493-495, 1997
991997
Low-Energy Yield Spectroscopy as a Novel Technique for Determining Band Offsets: Application to the Heterostructure
M Sebastiani, L Di Gaspare, G Capellini, C Bittencourt, F Evangelisti
Physical review letters 75 (18), 3352, 1995
991995
Atomic force microscopy and photoluminescence study of Ge layers and self‐organized Ge quantum dots on Si (100)
E Palange, G Capellini, L Di Gaspare, F Evangelisti
Applied physics letters 68 (21), 2982-2984, 1996
631996
Ge/Si (001) photodetector for near infrared light
L Colace, G Masini, F Galluzzi, G Assanto, G Capellini, L Di Gaspare, ...
Solid State Phenomena 54, 55-58, 1997
511997
Ge–Si intermixing in Ge quantum dots on Si
F Boscherini, G Capellini, L Di Gaspare, M De Seta, F Rosei, A Sgarlata, ...
Thin Solid Films 380 (1-2), 173-175, 2000
462000
Observation of Magnetoplasmons in Bi2Se3 Topological Insulator
M Autore, H Engelkamp, F D’Apuzzo, AD Gaspare, PD Pietro, IL Vecchio, ...
Acs Photonics 2 (9), 1231-1235, 2015
372015
Investigating the CVD synthesis of graphene on Ge (100): toward layer-by-layer growth
AM Scaparro, V Miseikis, C Coletti, A Notargiacomo, M Pea, M De Seta, ...
ACS applied materials & interfaces 8 (48), 33083-33090, 2016
342016
Blending CoS and Pt for amelioration of electrodeposited transparent counterelectrodes and the efficiency of back-illuminated dye solar cells
F De Rossi, L Di Gaspare, A Reale, A Di Carlo, TM Brown
Journal of Materials Chemistry A 1 (41), 12941-12947, 2013
332013
Single-electron transistor based on modulation-doped SiGe heterostructures
A Notargiacomo, L Di Gaspare, G Scappucci, G Mariottini, F Evangelisti, ...
Applied physics letters 83 (2), 302-304, 2003
292003
Investigation of SiGe-heterostructure nanowires
E Giovine, A Notargiacomo, L Di Gaspare, E Palange, F Evangelisti, ...
Nanotechnology 12 (2), 132, 2001
282001
Evolution of islands during Si capping at high temperature
G Capellini, M De Seta, L Di Gaspare, F Evangelisti, F d’Acapito
Journal of applied physics 98 (12), 124901, 2005
262005
Strain relaxation by pit formation in epitaxial SiGe alloy films grown on Si (001)
L Di Gaspare, E Palange, G Capellini, F Evangelisti
Journal of Applied Physics 88 (1), 120-123, 2000
252000
Early stage of CVD graphene synthesis on Ge (001) substrate
L Di Gaspare, AM Scaparro, M Fanfoni, L Fazi, A Sgarlata, ...
Carbon 134, 183-188, 2018
242018
Conductance quantization in etched Si∕ Si Ge quantum point contacts
G Scappucci, L Di Gaspare, E Giovine, A Notargiacomo, R Leoni, ...
Physical Review B 74 (3), 035321, 2006
222006
Physical mechanisms of intersubband-absorption linewidth broadening in s-Ge/SiGe quantum wells
M Virgilio, D Sabbagh, M Ortolani, L Di Gaspare, G Capellini, M De Seta
Physical Review B 90 (15), 155420, 2014
212014
Freezing shape and composition of self-assembled islands during silicon capping
M De Seta, G Capellini, L Di Gaspare, F Evangelisti, F d’Acapito
Journal of Applied Physics 100 (9), 093516, 2006
212006
A single electron transistor based on Si/SiGe wires
A Notargiacomo, L Di Gaspare, G Scappucci, G Mariottini, E Giovine, ...
Materials Science and Engineering: C 23 (6-8), 671-673, 2003
212003
Solid-phase epitaxy induced by low-power pulsed-laser annealing of III-V compound semiconductors
G Vitali, L Palumbo, M Rossi, G Zollo, C Pizzuto, L Di Gaspare, ...
Physical Review B 53 (8), 4757, 1996
211996
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Articles 1–20