| Electronic and atomic structure of amorphous carbon J Robertson, EP O’reilly Physical Review B 35 (6), 2946, 1987 | 1617 | 1987 |
| Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots PW Fry, IE Itskevich, DJ Mowbray, MS Skolnick, JJ Finley, JA Barker, ... Physical review letters 84 (4), 733, 2000 | 640 | 2000 |
| Theory of defects in vitreous silicon dioxide EP O'Reilly, J Robertson Physical Review B 27 (6), 3780, 1983 | 504 | 1983 |
| Valence band engineering in strained-layer structures EP O'Reilly Semiconductor Science and Technology 4, 121, 1989 | 495 | 1989 |
| Theory of the electronic structure of GaN/AlN hexagonal quantum dots AD Andreev, EP O’Reilly Physical Review B 62 (23), 15851, 2000 | 431 | 2000 |
| Theory of enhanced bandgap non-parabolicity in GaN x As 1− x and related alloys A Lindsay, EP O'Reilly Solid state communications 112 (8), 443-447, 1999 | 295 | 1999 |
| Strain distributions in quantum dots of arbitrary shape AD Andreev, JR Downes, DA Faux, EP OReilly Journal of applied physics 86 (1), 297-305, 1999 | 281 | 1999 |
| Band-structure engineering in strained semiconductor lasers EP O'Reilly, AR Adams IEEE Journal of Quantum electronics 30 (2), 366-379, 1994 | 229 | 1994 |
| (Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen PJ Klar, H Grüning, J Koch, S Schäfer, K Volz, W Stolz, W Heimbrodt, ... Physical Review B 64 (12), 121203, 2001 | 228 | 2001 |
| Unification of the band anticrossing and cluster-state models of dilute nitride semiconductor alloys A Lindsay, EP O'Reilly Physical review letters 93 (19), 196402, 2004 | 223 | 2004 |
| Theoretical analysis of electron-hole alignment in InAs-GaAs quantum dots JA Barker, EP O’Reilly Physical Review B 61 (20), 13840, 2000 | 216 | 2000 |
| Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs M Usman, CA Broderick, A Lindsay, EP O’Reilly Physical Review B 84 (24), 245202, 2011 | 213 | 2011 |
| Dipole nanolaser IE Protsenko, AV Uskov, OA Zaimidoroga, VN Samoilov, EP O’reilly Physical Review A 71 (6), 063812, 2005 | 194 | 2005 |
| A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers R Fehse, S Tomic, AR Adams, SJ Sweeney, EP O'Reilly, A Andreev, ... IEEE Journal of selected topics in quantum electronics 8 (4), 801-810, 2002 | 189 | 2002 |
| Band engineering in dilute nitride and bismide semiconductor lasers CA Broderick, M Usman, SJ Sweeney, EP O’Reilly Semiconductor Science and Technology 27 (9), 094011, 2012 | 162 | 2012 |
| Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers S Tomic, EP O'Reilly, R Fehse, SJ Sweeney, AR Adams, AD Andreev, ... IEEE Journal of selected topics in quantum electronics 9 (5), 1228-1238, 2003 | 161 | 2003 |
| Tight-binding and k· p models for the electronic structure of Ga (In) NAs and related alloys EP O'Reilly, A Lindsay, S Tomić, M Kamal-Saadi Semiconductor science and technology 17 (8), 870, 2002 | 161 | 2002 |
| Evaluation of various approximations used in the envelope-function method AT Meney, B Gonul, EP O’Reilly Physical Review B 50 (15), 10893, 1994 | 145 | 1994 |
| Electronic structure of amorphous III-V and II-VI compound semiconductors and their defects EP O’reilly, J Robertson Physical Review B 34 (12), 8684, 1986 | 136 | 1986 |
| Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in GaAs_ {1− x} N_ {x} F Masia, G Pettinari, A Polimeni, M Felici, A Miriametro, M Capizzi, ... Physical Review B 73 (7), 073201, 2006 | 135 | 2006 |
Alfred AdamsProfessor of Physics, University of SurreyEmail verificata su surrey.ac.uk
