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Abdelhamid Ghrib,
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Citata da
Anno
Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process
G Capellini, C Reich, S Guha, Y Yamamoto, M Lisker, M Virgilio, A Ghrib, ...
Optics express 22 (1), 399-410, 2014
1222014
Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach
G Capellini, G Kozlowski, Y Yamamoto, M Lisker, C Wenger, G Niu, ...
Journal of Applied Physics 113 (1), 2013
1152013
Tensile-strained germanium microdisks
A Ghrib, M El Kurdi, M De Kersauson, M Prost, S Sauvage, X Checoury, ...
Applied Physics Letters 102 (22), 2013
1052013
All‐Around SiN Stressor for High and Homogeneous Tensile Strain in Germanium Microdisk Cavities
A Ghrib, M El Kurdi, M Prost, S Sauvage, X Checoury, G Beaudoin, ...
Advanced Optical Materials 3 (3), 353-358, 2015
982015
Recent advances in germanium emission
P Boucaud, M El Kurdi, A Ghrib, M Prost, M De Kersauson, S Sauvage, ...
Photonics Research 1 (3), 102-109, 2013
972013
Control of tensile strain in germanium waveguides through silicon nitride layers
A Ghrib, M De Kersauson, M El Kurdi, R Jakomin, G Beaudoin, ...
Applied Physics Letters 100 (20), 2012
812012
Control of tensile strain and interdiffusion in Ge/Si (001) epilayers grown by molecular-beam epitaxy
TKP Luong, MT Dau, MA Zrir, M Stoffel, V Le Thanh, M Petit, A Ghrib, ...
Journal of Applied Physics 114 (8), 2013
732013
Direct band gap germanium microdisks obtained with silicon nitride stressor layers
M El Kurdi, M Prost, A Ghrib, S Sauvage, X Checoury, G Beaudoin, ...
ACS photonics 3 (3), 443-448, 2016
722016
Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon
I Roland, Y Zeng, Z Han, X Checoury, C Blin, M El Kurdi, A Ghrib, ...
Applied Physics Letters 105 (1), 2014
432014
Light emission from strained germanium
JR Jain, A Hryciw, TM Baer, DAB Miller, ML Brongersma, RT Howe
Nature Photonics 7 (3), 162-163, 2013
372013
Effect of increasing thickness on tensile-strained germanium grown on InGaAs buffer layers
M De Kersauson, M Prost, A Ghrib, M El Kurdi, S Sauvage, G Beaudoin, ...
Journal of Applied Physics 113 (18), 2013
322013
Molecular-beam epitaxial growth of tensile-strained and n-doped Ge/Si (001) films using a GaP decomposition source
TKP Luong, A Ghrib, MT Dau, MA Zrir, M Stoffel, V Le Thanh, R Daineche, ...
Thin Solid Films 557, 70-75, 2014
312014
Tensile-strained germanium microdisks with circular Bragg reflectors
M El Kurdi, M Prost, A Ghrib, A Elbaz, S Sauvage, X Checoury, ...
Applied Physics Letters 108 (9), 2016
272016
Tensile-strained germanium microdisk electroluminescence
M Prost, M El Kurdi, A Ghrib, S Sauvage, X Checoury, N Zerounian, ...
Optics Express 23 (5), 6722-6730, 2015
242015
Making germanium, an indirect band gap semiconductor, suitable for light-emitting devices
TKP Luong, V Le Thanh, A Ghrib, M El Kurdi, P Boucaud
Advances in Natural Sciences: Nanoscience and Nanotechnology 6 (1), 015013, 2015
192015
Schottky electroluminescent diodes with n-doped germanium
M Prost, M El Kurdi, A Ghrib, X Checoury, N Zerounian, F Aniel, ...
Applied Physics Letters 104 (24), 2014
112014
Strain engineering in germanium microdisks
A Ghrib, M El Kurdi, M Prost, M De Kersauson, L Largeau, O Mauguin, ...
Silicon Photonics IX 8990, 293-299, 2014
82014
ACS Photonics 3, 443 (2016)
M El Kurdi, M Prost, A Ghrib, S Sauvage, X Checoury, G Beaudoin, ...
7
Photonics Res. 1, 102 (2013)
P Boucaud, M El Kurdi, A Ghrib, M Prost, M de Kersauson, S Sauvage, ...
7
Enhanced Tensile Strain in P-doped Ge Films Grown by Molecular Beam Epitaxy Using GaP and Sb Solid Sources
TKP Luong, V Le Thanh, A Ghrib, M El Kurdi, P Boucaud
Journal of Electronic Materials 48, 4674-4678, 2019
52019
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