| Subnanosecond incubation times for electric-field-induced metallization of a correlated electron oxide J Brockman, L Gao, B Hughes, CT Rettner, MG Samant, KP Roche, ... Nature Nanotechnology 9 (6), 453-458, 2014 | 81 | 2014 |
| MRAM as embedded non-volatile memory solution for 22FFL FinFET technology O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ... 2018 IEEE International Electron Devices Meeting (IEDM), 18.1. 1-18.1. 4, 2018 | 76 | 2018 |
| Oscillation effects and time variation of the supernova neutrino signal JP Kneller, GC McLaughlin, J Brockman Physical Review D 77 (4), 045023, 2008 | 73 | 2008 |
| 13.3 A 7Mb STT-MRAM in 22FFL FinFET technology with 4ns read sensing time at 0.9 V using write-verify-write scheme and offset-cancellation sensing technique L Wei, JG Alzate, U Arslan, J Brockman, N Das, K Fischer, T Ghani, ... 2019 IEEE International Solid-State Circuits Conference-(ISSCC), 214-216, 2019 | 56 | 2019 |
| Increased metal-insulator transition temperatures in epitaxial thin films of V2O3 prepared in reduced oxygen environments J Brockman, NP Aetukuri, T Topuria, MG Samant, KP Roche, SSP Parkin Applied Physics Letters 98 (15), 152105-152105-3, 2011 | 37 | 2011 |
| Substrate-induced disorder in V2O3 thin films grown on annealed c-plane sapphire substrates J Brockman, MG Samant, KP Roche, SSP Parkin Applied Physics Letters 101 (5), 051606, 2012 | 36 | 2012 |
| 2 MB array-level demonstration of STT-MRAM process and performance towards L4 cache applications JG Alzate, U Arslan, P Bai, J Brockman, YJ Chen, N Das, K Fischer, ... 2019 IEEE International Electron Devices Meeting (IEDM), 2.4. 1-2.4. 4, 2019 | 23 | 2019 |
| Valence and conduction band offsets at amorphous hexagonal boron nitride interfaces with silicon network dielectrics SW King, MM Paquette, JW Otto, AN Caruso, J Brockman, J Bielefeld, ... Applied Physics Letters 104 (10), 102901, 2014 | 18 | 2014 |
| Band diagram for low-k/Cu interconnects: The starting point for understanding back-end-of-line (BEOL) electrical reliability MJ Mutch, T Pomorski, BC Bittel, CJ Cochrane, PM Lenahan, X Liu, ... Microelectronics Reliability 63, 201-213, 2016 | 17 | 2016 |
| Valence band offset and Schottky barrier at amorphous boron and boron carbide interfaces with silicon and copper SW King, M French, G Xu, B French, M Jaehnig, J Bielefeld, J Brockman, ... Applied surface science 285, 545-551, 2013 | 14 | 2013 |
| Band alignment at molybdenum disulphide/boron nitride/aluminum oxide interfaces J DiStefano, YC Lin, J Robinson, NR Glavin, AA Voevodin, J Brockman, ... Journal of Electronic Materials 45 (2), 983-988, 2016 | 11 | 2016 |
| Valence and conduction band offsets at low-k a-SiOxCy:H/a-SiCxNy:H interfaces SW King, J Brockman, M French, M Jaehnig, M Kuhn, B French Journal of Applied Physics 116 (11), 113703, 2014 | 7 | 2014 |
| Approaches for strain engineering of perpendicular magnetic tunnel junctions (pMTJs) and the resulting structures DG Ouellette, CJ Wiegand, MT Rahman, B Maertz, O Golonzka, ... US Patent 10,868,233, 2020 | 6 | 2020 |
| Device, system and method for improved magnetic anisotropy of a magnetic tunnel junction MT Rahman, CJ Wiegand, B Maertz, DG Ouellette, KP O'brien, K Oguz, ... US Patent 10,804,460, 2020 | 3 | 2020 |
| eNVM MRAM retention reliability modeling in 22FFL FinFET technology JA O'Donnell, C Connor, T Pramanik, J Hicks, JG Alzate, F Hamzaoglu, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 1-3, 2019 | 3 | 2019 |
| Electric field-induced conductivity switching in vanadium sesquioxide nanostructures J Brockman PQDT-Global, 2012 | 3 | 2012 |
| Band offsets at amorphous hydrogenated boron nitride/high-k oxide interfaces from x-ray photoelectron spectroscopy with charging effects analysis MM Paquette, AN Caruso, J Brockman, J Bielefeld, M Kuhn, SW King Journal of Vacuum Science & Technology B, Nanotechnology and …, 2020 | 2 | 2020 |
| PSTTM device with bottom electrode interface material K Oguz, KP O'brien, CJ Wiegand, MT Rahman, BS Doyle, ML Doczy, ... US Patent 10,340,445, 2019 | 2 | 2019 |
| PSTTM device with free magnetic layers coupled through a metal layer having high temperature stability K Oguz, KP O'brien, CJ Wiegand, T Rahman, BS Doyle, ML Doczy, ... US Patent 10,580,970, 2020 | 1 | 2020 |
| Magnetic memory devices with layered electrodes and methods of fabrication J Brockman, C Puls, S Wu, C Wiegand, T Rahman, D Ouellette, A Smith, ... US Patent App. 16/024,522, 2020 | 1 | 2020 |
Markus KuhnIntel CorporationEmail verificata su intel.com
