‪Alireza Aghanejad Ahmadchally‬ - ‪Google Scholar‬

Crea il mio profilo

Citata da

	Tutte	Dal 2019
Citazioni	18	18
Indice H	2	2
i10-index	1	1

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8

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2022202320245 8 5

Coautori

Morteza GholipourBabol Noshirvani University of TechnologyEmail verificata su nit.ac.ir
armin gooranBabol Noshirvani University of TechnologyEmail verificata su nit.ac.ir
Samaneh Soleimani-AmiriBabol Noshirvani University of TechnologyEmail verificata su nit.ac.ir
Ehsan Gholinataj-JelodarBabol Noshirvani University of Technology (BNUT)Email verificata su stu.nit.ac.ir

Alireza Aghanejad Ahmadchally

Alireza Aghanejad Ahmadchally

Boston University

Email verificata su bu.edu

Semiconductor Devices Modeling and Simulation


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Design of a low-power short-channel electrostatically doped silicene nanoribbon FET A Gooran-Shoorakchaly, AA Ahmadchally, S Soleimani-Amiri, ... IEEE Transactions on Electron Devices 68 (4), 1956-1961, 2021	12	2021
Investigation of 6-armchair graphene nanoribbon tunnel FETs A Aghanejad Ahmadchally, M Gholipour Journal of Computational Electronics 20 (3), 1114-1124, 2021	4	2021
Semi-analytical SPICE-compatible ballistic I–V model for 5 nm channel MoS2 FETs E Gholinataj-Jelodar, A Aghanejad Ahmadchally, A Gooran-Shoorakchaly, ... Journal of Computational Electronics 21 (5), 1108-1115, 2022	2	2022

Il sistema al momento non può eseguire l'operazione. Riprova più tardi.

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