Nishtha Srivastava
Nishtha Srivastava
Intel, Senior Process Engineer
Email verificata su andrew.cmu.edu
Titolo
Citata da
Citata da
Anno
Graphene nucleation density on copper: fundamental role of background pressure
I Vlassiouk, S Smirnov, M Regmi, SP Surwade, N Srivastava, R Feenstra, ...
The Journal of Physical Chemistry C 117 (37), 18919-18926, 2013
2002013
Comparison of graphene formation on C-face and Si-face SiC {0001} surfaces
N Srivastava, G He, RM Feenstra, PJ Fisher
Physical Review B 82 (23), 235406, 2010
1202010
Low-energy electron reflectivity from graphene
RM Feenstra, N Srivastava, Q Gao, M Widom, B Diaconescu, T Ohta, ...
Physical Review B 87 (4), 041406, 2013
1012013
Graphene formed on SiC under various environments: comparison of Si-face and C-face
N Srivastava, G He, PC Mende, RM Feenstra, Y Sun
Journal of Physics D: Applied Physics 45 (15), 154001, 2012
742012
Low-energy electron reflectivity of graphene on copper and other substrates
N Srivastava, Q Gao, M Widom, RM Feenstra, S Nie, KF McCarty, ...
Physical Review B 87 (24), 245414, 2013
572013
Formation of epitaxial graphene on SiC (0001) using vacuum or argon environments
Luxmi, N Srivastava, RM Feenstra, PJ Fisher
Journal of Vacuum Science & Technology B, Nanotechnology and…, 2010
452010
Y. Sun, J. Kedzierski, P. Healey, and G. Gu
PJ Luxmi, NS Fisher, F RM
Appl. Phys. Lett 95, 073101, 2009
352009
Luxmi, and RM Feenstra
N Srivastava, G He
Phys. Rev. B 85, 041404, 2012
292012
Evidences of electrochemical graphene functionalization and substrate dependence by Raman and scanning tunneling spectroscopies
KM Daniels, BK Daas, N Srivastava, C Williams, RM Feenstra, ...
Journal of Applied Physics 111 (11), 114306, 2012
252012
Morphology of graphene on surfaces
Luxmi, PJ Fisher, N Srivastava, RM Feenstra, Y Sun, J Kedzierski, ...
Applied Physics Letters 95 (7), 073101, 2009
242009
Thickness monitoring of graphene on SiC using low-energy electron diffraction
PJ Fisher, Luxmi, N Srivastava, S Nie, RM Feenstra
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 28 (4…, 2010
182010
Formation of a Buffer Layer for Graphene on C-face SiC {0001}
G He, N Srivastava, RM Feenstra
Journal of Electronic Materials, 2014
102014
Interface structure of graphene on SiC(000)
N Srivastava, G He, RM Feenstra
Physical Review B 85 (4), 041404, 2012
92012
The influence of the band structure of epitaxial graphene on SiC on the transistor characteristics
G Gu, PJ Fisher, N Srivastava, RM Feenstra
Solid state communications 149 (47-48), 2194-2198, 2009
82009
Evidence of electrochemical graphene functionalization by Raman spectroscopy
KM Daniels, BK Daas, N Srivastava, C Williams, RM Feenstra, ...
Materials Science Forum 717, 661-664, 2012
52012
Formation of graphene on SiC() surfaces in disilane and neon environments
G He, N Srivastava, RM Feenstra
Journal of Vacuum Science & Technology B, Nanotechnology and…, 2012
32012
Interface structure of graphene on SiC for various preparation conditions
N Srivastava
22012
Graphene on Carbon-Face SiС {0001} Surfaces Formed in a Disilane Environment
N Srivastava, GW He, RM Feenstra
Materials Science Forum 717, 609-612, 2012
22012
Low-Energy Electron Reflectivity of Two-dimensional Materials
Q Gao, P Mende, N Srivastava, M Widom, R Feenstra
Bulletin of the American Physical Society 59, 2014
2014
Theory of low-energy electron reflectivity from graphene
R Feenstra, N Srivastava, M Widom, I Vlassiouk
APS March Meeting Abstracts 2013, U6. 011, 2013
2013
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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