Recent progress on ZnO‐based metal‐semiconductor field‐effect transistors and their application in transparent integrated circuits H Frenzel, A Lajn, H Von Wenckstern, M Lorenz, F Schein, Z Zhang, ...
Advanced Materials 22 (47), 5332-5349, 2010
179 2010 Properties of reactively sputtered Ag, Au, Pd, and Pt Schottky contacts on A Lajn, H Wenckstern, Z Zhang, C Czekalla, G Biehne, J Lenzner, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
100 2009 Structural and optical properties of (In, Ga) 2O3 thin films and characteristics of Schottky contacts thereon H Von Wenckstern, D Splith, M Purfürst, Z Zhang, C Kranert, S Müller, ...
Semiconductor Science and Technology 30 (2), 024005, 2015
89 2015 Continuous composition spread using pulsed-laser deposition with a single segmented target H von Wenckstern, Z Zhang, F Schmidt, J Lenzner, H Hochmuth, ...
CrystEngComm 15 (46), 10020-10027, 2013
72 2013 Mott variable-range hopping and weak antilocalization effect in heteroepitaxial Na M Jenderka, J Barzola-Quiquia, Z Zhang, H Frenzel, M Grundmann, ...
Physical Review B 88 (4), 045111, 2013
63 2013 Visible-blind and solar-blind ultraviolet photodiodes based on (InxGa1− x) 2O3 Z Zhang, H von Wenckstern, J Lenzner, M Lorenz, M Grundmann
Applied Physics Letters 108 (12), 2016
57 2016 Wavelength selective metal-semiconductor-metal photodetectors based on (Mg, Zn) O-heterostructures Z Zhang, H von Wenckstern, M Schmidt, M Grundmann
Applied Physics Letters 99 (8), 2011
56 2011 Energy-selective multichannel ultraviolet photodiodes based on (Mg, Zn) O Z Zhang, H von Wenckstern, M Grundmann
Applied Physics Letters 103 (17), 2013
31 2013 Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structures L Krieg, F Meierhofer, S Gorny, S Leis, D Splith, Z Zhang, ...
Nature communications 11 (1), 5092, 2020
25 2020 Monolithic multichannel ultraviolet photodiodes based on (Mg, Zn) O thin films with continuous composition spreads Z Zhang, H von Wenckstern, M Grundmann
IEEE Journal of Selected Topics in Quantum Electronics 20 (6), 106-111, 2014
22 2014 Program FFlexCom—High frequency flexible bendable electronics for wireless communication systems T Meister, F Ellinger, JW Bartha, M Berroth, J Burghartz, M Claus, L Frey, ...
2017 IEEE international conference on microwaves, antennas, communications …, 2017
17 2017 Full-swing, high-gain inverters based on ZnSnO JFETs and MESFETs O Lahr, Z Zhang, F Grotjahn, P Schlupp, S Vogt, H von Wenckstern, ...
IEEE Transactions on Electron Devices 66 (8), 3376-3381, 2019
15 2019 Interface charging effects in ferroelectric ZnO–BaTiO3 field‐effect transistor heterostructures P Schwinkendorf, M Lorenz, H Hochmuth, Z Zhang, M Grundmann
physica status solidi (a) 211 (1), 166-172, 2014
11 2014 Controlled formation of Schottky diodes on n-doped ZnO layers by deposition of p-conductive polymer layers with oxidative chemical vapor deposition L Krieg, Z Zhang, D Splith, H von Wenckstern, M Grundmann, X Wang, ...
Nano Express 1 (1), 010013, 2020
9 2020 Wavelength-selective ultraviolet (Mg, Zn) O photodiodes: Tuning of parallel composition gradients with oxygen pressure Z Zhang, H von Wenckstern, J Lenzner, M Grundmann
Applied Physics Letters 108 (24), 2016
9 2016 A continuous composition spread approach towards monolithic, wavelength-selective multichannel UV-photo-detector arrays H von Wenckstern, Z Zhang, J Lenzner, F Schmidt, M Grundmann
MRS Online Proceedings Library (OPL) 1633, 123-129, 2014
6 2014 Light beam induced current measurements on ZnO Schottky diodes and MESFETs H von Wenckstern, ZP Zhang, M Lorenz, C Czekalla, H Frenzel, A Lajn, ...
MRS Online Proceedings Library (OPL) 1201, 1201-H04-02, 2009
5 2009 Recent Progress on ZnO-Based Metal-Semiconductor Field-Effect Transistors and Their Application in Transparent Integrated Circuits (vol 22, pg 5332, 2010) H Frenzel, A Lajn, H von Wenckstern, M Lorenz, F Schein, ZP Zhang, ...
Advanced Materials 23 (12), 1424-1424, 2011
3 2011 Correction: Recent Progress on ZnO‐Based Metal‐Semiconductor Field‐Effect Transistors and Their Application in Transparent Integrated Circuits H Frenzel, A Lajn, H von Wenckstern, M Lorenz, F Schein, Z Zhang, ...
Advanced Materials 23 (12), 1425-1425, 2011
2 2011 Visible-blind and solar-blind ultraviolet photodiodes based on (In {sub x} Ga {sub 1− x}){sub 2} O {sub 3} Z Zhang, H Wenckstern, J Lenzner, M Lorenz, M Grundmann
Applied Physics Letters 108 (12), 2016
2016 
Marius GrundmannUniversität LeipzigEmail verificata su physik.uni-leipzig.de
