| Electrical characteristics of magnesium-doped gallium nitride junction diodes JB Fedison, TP Chow, H Lu, IB Bhat Applied physics letters 72 (22), 2841-2843, 1998 | 126 | 1998 |
| Electro-chemical mechanical polishing of silicon carbide C Li, IB Bhat, R Wang, J Seiler Journal of electronic materials 33, 481-486, 2004 | 124 | 2004 |
| Electrical characterization of Mg‐doped GaN grown by metalorganic vapor phase epitaxy JW Huang, TF Kuech, H Lu, I Bhat Applied physics letters 68 (17), 2392-2394, 1996 | 112 | 1996 |
| Material for selective deposition and etching I Bhat, J Seiler, C Li US Patent App. 11/215,185, 2006 | 105 | 2006 |
| App. Phys. Letts. RP Chang App. Phys. Letts, 999, 1980 | 89* | 1980 |
| Growth of hexagonal boron nitride on (111) Si for deep UV photonics and thermal neutron detection K Ahmed, R Dahal, A Weltz, JQ Lu, Y Danon, IB Bhat Applied physics letters 109 (11), 2016 | 78 | 2016 |
| The organometallic epitaxy of extrinsic p‐doped HgCdTe NR Taskar, IB Bhat, KK Parat, D Terry, H Ehsani, SK Ghandhi Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7 (2 …, 1989 | 73 | 1989 |
| Photoassisted anodic etching of gallium nitride H Lu, Z Wu, I Bhat Journal of the Electrochemical Society 144 (1), L8, 1997 | 65 | 1997 |
| Antimonide-based devices for thermophotovoltaic applications CW Hitchcock, RJ Gutmann, JM Borrego, IB Bhat, GW Charache IEEE Transactions on Electron Devices 46 (10), 2154-2161, 1999 | 62 | 1999 |
| Self-powered micro-structured solid state neutron detector with very low leakage current and high efficiency R Dahal, KC Huang, J Clinton, N LiCausi, JQ Lu, Y Danon, I Bhat Applied Physics Letters 100 (24), 2012 | 60 | 2012 |
| On the Mechanism of Growth of CdTe by Organometallic Vapor‐Phase Epitaxy IB Bhat, NR Taskar, SK Ghandhi Journal of the Electrochemical Society 134 (1), 195, 1987 | 60 | 1987 |
| Arsenic‐doped p‐CdTe layers grown by organometallic vapor phase epitaxy SK Ghandhi, NR Taskar, IB Bhat Applied physics letters 50 (14), 900-902, 1987 | 58 | 1987 |
| Elastic strains in CdTe‐GaAs heterostructures grown by metalorganic chemical vapor deposition DJ Olego, J Petruzzello, SK Ghandhi, NR Taskar, IB Bhat Applied physics letters 51 (2), 127-129, 1987 | 56 | 1987 |
| Solid-state neutron detectors based on thickness scalable hexagonal boron nitride K Ahmed, R Dahal, A Weltz, JJQ Lu, Y Danon, IB Bhat Applied Physics Letters 110 (2), 2017 | 54 | 2017 |
| 6kV 4H-SiC BJTs with specific on-resistance below the unipolar limit using a selectively grown base contact process S Balachandran, C Li, PA Losee, IB Bhat, TP Chow Proceedings of the 19th International Symposium on Power Semiconductor …, 2007 | 53 | 2007 |
| Real-time monitoring and control during MOVPE growth of CdTe using multiwavelength ellipsometry B Johs, D Doerr, S Pittal, IB Bhat, S Dakshinamurthy Thin Solid Films 233 (1-2), 293-296, 1993 | 52 | 1993 |
| Ternary and quaternary antimonide devices for thermophotovoltaic applications CW Hitchcock, RJ Gutmann, H Ehsani, IB Bhat, CA Wang, MJ Freeman, ... Journal of crystal growth 195 (1-4), 363-372, 1998 | 51 | 1998 |
| High quality Hg1−xCdxTe epitaxial layers by the organometallic process SK Ghandhi, I Bhat Applied physics letters 44 (8), 779-781, 1984 | 51 | 1984 |
| Epitaxial growth of AlN and layers on aluminum nitride substrates LJ Schowalter, Y Shusterman, R Wang, I Bhat, G Arunmozhi, GA Slack Applied Physics Letters 76 (8), 985-987, 2000 | 50 | 2000 |
| 4H-SiC n-Channel Insulated Gate Bipolar Transistors on (0001) and (000-1) Oriented Free-Standing n−Substrates S Chowdhury, C Hitchcock, Z Stum, R Dahal, IB Bhat, TP Chow IEEE Electron Device Letters 37 (3), 317-320, 2016 | 48 | 2016 |
