Electro-chemical mechanical polishing of silicon carbide C Li, IB Bhat, R Wang, J Seiler
Journal of electronic materials 33, 481-486, 2004
126 2004 Electrical characteristics of magnesium-doped gallium nitride junction diodes JB Fedison, TP Chow, H Lu, IB Bhat
Applied physics letters 72 (22), 2841-2843, 1998
126 1998 Electrical characterization of Mg‐doped GaN grown by metalorganic vapor phase epitaxy JW Huang, TF Kuech, H Lu, I Bhat
Applied physics letters 68 (17), 2392-2394, 1996
112 1996 Material for selective deposition and etching I Bhat, J Seiler, C Li
US Patent App. 11/215,185, 2006
105 2006 App. Phys. Letts. RP Chang
App. Phys. Letts, 999, 1980
89 * 1980 Growth of hexagonal boron nitride on (111) Si for deep UV photonics and thermal neutron detection K Ahmed, R Dahal, A Weltz, JQ Lu, Y Danon, IB Bhat
Applied physics letters 109 (11), 2016
81 2016 The organometallic epitaxy of extrinsic p ‐doped HgCdTe NR Taskar, IB Bhat, KK Parat, D Terry, H Ehsani, SK Ghandhi
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7 (2 …, 1989
73 1989 Photoassisted anodic etching of gallium nitride H Lu, Z Wu, I Bhat
Journal of the Electrochemical Society 144 (1), L8, 1997
65 1997 Antimonide-based devices for thermophotovoltaic applications CW Hitchcock, RJ Gutmann, JM Borrego, IB Bhat, GW Charache
IEEE Transactions on Electron Devices 46 (10), 2154-2161, 1999
62 1999 Self-powered micro-structured solid state neutron detector with very low leakage current and high efficiency R Dahal, KC Huang, J Clinton, N LiCausi, JQ Lu, Y Danon, I Bhat
Applied Physics Letters 100 (24), 2012
60 2012 On the Mechanism of Growth of CdTe by Organometallic Vapor‐Phase Epitaxy IB Bhat, NR Taskar, SK Ghandhi
Journal of the Electrochemical Society 134 (1), 195, 1987
60 1987 Arsenic‐doped p ‐CdTe layers grown by organometallic vapor phase epitaxy SK Ghandhi, NR Taskar, IB Bhat
Applied physics letters 50 (14), 900-902, 1987
58 1987 Elastic strains in CdTe‐GaAs heterostructures grown by metalorganic chemical vapor deposition DJ Olego, J Petruzzello, SK Ghandhi, NR Taskar, IB Bhat
Applied physics letters 51 (2), 127-129, 1987
57 1987 Solid-state neutron detectors based on thickness scalable hexagonal boron nitride K Ahmed, R Dahal, A Weltz, JJQ Lu, Y Danon, IB Bhat
Applied Physics Letters 110 (2), 2017
54 2017 6kV 4H-SiC BJTs with specific on-resistance below the unipolar limit using a selectively grown base contact process S Balachandran, C Li, PA Losee, IB Bhat, TP Chow
Proceedings of the 19th International Symposium on Power Semiconductor …, 2007
53 2007 Real-time monitoring and control during MOVPE growth of CdTe using multiwavelength ellipsometry B Johs, D Doerr, S Pittal, IB Bhat, S Dakshinamurthy
Thin Solid Films 233 (1-2), 293-296, 1993
52 1993 Ternary and quaternary antimonide devices for thermophotovoltaic applications CW Hitchcock, RJ Gutmann, H Ehsani, IB Bhat, CA Wang, MJ Freeman, ...
Journal of crystal growth 195 (1-4), 363-372, 1998
51 1998 High quality Hg1−x Cdx Te epitaxial layers by the organometallic process SK Ghandhi, I Bhat
Applied physics letters 44 (8), 779-781, 1984
51 1984 Epitaxial growth of AlN and layers on aluminum nitride substrates LJ Schowalter, Y Shusterman, R Wang, I Bhat, G Arunmozhi, GA Slack
Applied Physics Letters 76 (8), 985-987, 2000
50 2000 4H-SiC n-Channel Insulated Gate Bipolar Transistors on (0001) and (000-1) Oriented Free-Standing n− Substrates S Chowdhury, C Hitchcock, Z Stum, R Dahal, IB Bhat, TP Chow
IEEE Electron Device Letters 37 (3), 317-320, 2016
48 2016