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José Luis Padilla de la Torre
José Luis Padilla de la Torre
Email verificata su epfl.ch
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Anno
Radiofrequency identification of wireless devices based on RF fingerprinting
P Padilla, JL Padilla, JF Valenzuela‐Valdés
Electronics letters 49 (22), 1409-1410, 2013
542013
Impact of quantum confinement on gate threshold voltage and subthreshold swings in double-gate tunnel FETs
JL Padilla, F Gamiz, A Godoy
IEEE transactions on electron devices 59 (12), 3205-3211, 2012
502012
Assessment of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor
JL Padilla, C Alper, F Gámiz, AM Ionescu
Applied Physics Letters 105 (8), 2014
492014
A simple approach to quantum confinement in tunneling field-effect transistors
JL Padilla, F Gamiz, A Godoy
IEEE electron device letters 33 (10), 1342-1344, 2012
462012
A Little Higgs model of neutrino masses
F Del Aguila, M Masip, JL Padilla
Physics Letters B 627 (1-4), 131-136, 2005
442005
RF fingerprint measurements for the identification of devices in wireless communication networks based on feature reduction and subspace transformation
JL Padilla, P Padilla, JF Valenzuela-Valdés, J Ramírez, JM Górriz
Measurement 58, 468-475, 2014
382014
An embedded lightweight folded printed quadrifilar helix antenna: UAV telemetry and remote control systems
JMF González, P Padilla, JF Valenzuela-Valdes, JL Padilla, ...
IEEE Antennas and Propagation Magazine 59 (3), 69-76, 2017
342017
Simulation of fabricated 20-nm Schottky barrier MOSFETs on SOI: Impact of barrier lowering
JL Padilla, L Knoll, F Gamiz, QT Zhao, A Godoy, S Mantl
IEEE transactions on electron devices 59 (5), 1320-1327, 2012
342012
Impact of Asymmetric Configurations on the Heterogate Germanium Electron-Hole Bilayer Tunnel FET Including Quantum Confinement
JL Padilla, C Alper, A Godoy, F Gámiz, AM Ionescu
IEEE Transactions on Electron Devices 62 (11), 2015
332015
Confinement-induced InAs/GaSb heterojunction electron–hole bilayer tunneling field-effect transistor
JL Padilla, C Medina-Bailon, C Alper, F Gamiz, AM Ionescu
Applied Physics Letters 112 (18), 2018
292018
Human neuro-activity for securing body area networks: Application of brain-computer interfaces to people-centric Internet of Things
JF Valenzuela-Valdes, MA Lopez, P Padilla, JL Padilla, J Minguillon
IEEE Communications Magazine 55 (2), 62-67, 2017
282017
The Electron-Hole Bilayer TFET: Dimensionality Effects and Optimization
C Alper, P Palestri, JL Padilla, AM Ionescu
IEEE Transactions on Electron Devices 63 (6), 2603 - 2609, 2016
252016
Electronically reconfigurable reflective phase shifter for circularly polarized reflectarray systems
P Padilla, JF Valenzuela-Valdés, JL Padilla, JM Fernández-González, ...
IEEE Microwave and Wireless Components Letters 26 (9), 705-707, 2016
232016
Two dimensional quantum mechanical simulation of low dimensional tunneling devices
C Alper, P Palestri, L Lattanzio, JL Padilla, AM Ionescu
Solid-State Electronics 113, 167-172, 2015
212015
The effect of quantum confinement on tunneling field-effect transistors with high-κ gate dielectric
JL Padilla, F Gámiz, A Godoy
Applied Physics Letters 103 (11), 2013
182013
Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET
C Alper, P Palestri, JL Padilla, AM Ionescu
Semiconductor Science and Technology 31 (4), 045001, 2016
162016
Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor
JL Padilla, C Alper, C Medina-Bailón, F Gámiz, AM Ionescu
Applied Physics Letters 106 (26), 2015
162015
A novel reconfigurable sub-0.25-V digital logic family using the electron-hole bilayer TFET
C Alper, JL Padilla, P Palestri, AM Ionescu
IEEE Journal of the Electron Devices Society 6, 2-7, 2017
152017
MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections
C Medina-Bailon, C Sampedro, JL Padilla, A Godoy, L Donetti, F Gamiz, ...
2018 Joint International EUROSOI Workshop and International Conference on …, 2018
132018
Gate leakage tunneling impact on the InAs/GaSb heterojunction electron–Hole Bilayer tunneling field-effect transistor
JL Padilla, C Medina-Bailon, C Marquez, C Sampedro, L Donetti, F Gamiz, ...
IEEE Transactions on Electron Devices 65 (10), 4679-4686, 2018
112018
Il sistema al momento non puň eseguire l'operazione. Riprova piů tardi.
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