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Saurabh Chaudhary
Saurabh Chaudhary
Research Scholar, TIFR Hyderabad
Email verificata su tifrh.res.in
Titolo
Citata da
Citata da
Anno
Signature of gate-controlled magnetism and localization effects at Bi2Se3/EuS interface
S Mathimalar, S Sasmal, A Bhardwaj, S Abhaya, R Pothala, S Chaudhary, ...
npj Quantum Materials 5 (1), 64, 2020
112020
Robust monolayer exchange-bias effect in molecular crane-pulley response at magnetic surface
S Mundlia, S Chaudhary, L Peri, A Bhardwaj, JJ Panda, S Sasmal, ...
Physical Review Applied 14 (2), 024095, 2020
102020
A low noise cryogen-free scanning tunneling microscope–superconducting magnet system with vacuum sample transfer
S Chaudhary, JJ Panda, S Mundlia, S Mathimalar, A Ahmedof, KV Raman
Review of Scientific Instruments 92 (2), 2021
72021
Observation of zero-bias conductance peak in topologically-trivial hybrid superconducting interfaces
S Mohapatra, S Mathimalar, S Chaudhary, KV Raman
Journal of Physics Communications 3 (4), 045005, 2019
32019
Evidence of topological gap opening in the surface state of BiSe by proximity to a magnetic insulator
S Mathimalar, S Sasmal, P Rajasekhar, A Bhardwaj, S Chaudhary, ...
arXiv preprint arXiv:1907.12770, 2019
12019
Evidence of topological gap opening in the surface state of Bi2Se3 by proximity to a magnetic insulator
S Sasmal, A Bhardwaj, S Chaudhary, B Satpati, K Raman
Bulletin of the American Physical Society 65, 2020
2020
Probing pair-breaking mechanisms in proximity-induced hybrid superconducting interfaces
S Mohapatra, S Mathimalar, S Chaudhary, KV Raman
arXiv preprint arXiv:1807.11665, 2018
2018
Gate-and magnetic field-controlled topological gap opening in the surface state of Bi2Se3 by proximity to a magnetic insulator
S Mathimalar, P Rajasekhar, S Sasmal, A Bhardwaj, S Chaudhary, ...
Gate-and magnetic field-controlled metal-to-insulator transition in the surface state of Bi2Se3 by proximity to a magnetic insulator
S Mathimalar, P Rajasekhar, S Sasmal, A Bhardwaj, S Chaudhary, ...
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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